• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.1053-1056
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• 2007

The acoustical performance of noise reducing devices installed on the top of a noise barrier were tested by small-scale outdoor tests. Noise measurements before and after installation of the devices were carried out using sound intensity methods. It is well known that the sound intensity method can specify the strength and directivity of sound, and it is convenient to consider the feature of sound around a noise barrier. The noise reduction effect of each edge device was evaluated using the difference between the input and output sound power levels calculated from sound intensities. It was investigated that each device had different efficiency in the shadow zone, while there was no significant difference between edge devices in the illuminated zone.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.176-184
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• 1996

To overcome the drawbacks of conventional LDMOSFETs, we propose RESURF EDMOSFETs which can be adapted in varous circuit applications, be driven without charge pumping circuity and thowe threshold voltage can be adjusted. The devices have the diffused drift region formed by a high tmperature process before the gate oxidaton. After the polysilicon gate electrode formation, a fraction of the drift region around the gate edge is opened for supplemental self-aligned ion implantation to obtain self-aligned drift region. This leads to a shorter gate length and desirable drift region junction contour under the gate edge for minimum specific-on-resistance. In additon, a and maximize the breakdown voltage. Also, by biasing the metal field plate, we can reduce the specific-on-resistance further. The devices are optimized by using the TSUPREM-4 process simulator and the MEDICI device simulator. The optimized devices have the breakdwon voltage and the specific-on-resistance of 101.5V and 1.14m${\Omega}{\cdot}cm^{2}$, respectively for n-channel RESURF EDMOSFET, and 98V and 2.75m.ohm..cm$^{2}$ respectively for p-channel RESURF EDMOSFET. To check the validity of the simulations, we fabricated n-channel EDMOSFETs and confirmed the measured breakdown voltage of 97V and the specific-on-resistance of 1.28m${\Omega}{\cdot}cm^{2}$. These results are superior to those of any other reported power devices for smart power IC applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.19-20
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• 2006

As the Mobile and Display technology are being developed quickly, new wireless devices are released in great numbers. They reduce existing devices' life time and demand a reduction of developing period of portable devices. With these demands, existing film cutting mold used many films of portable devices, especially LCD Display, needs to be more precise, and cheaper. In this research, we have analyzed machining characteristics of cutter shapes, materials, and cutting conditions for application to other films. Cutter edge was machined by slot cutting method and CAD program to select the cutter shape and cutter angle. Also, we have determined the optimal cutting conditions using high speed machining experiments to improve the productivity.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.1-4
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• 2009

This work shows how the adoption of a dual-dicing process for silicon wafer separation affects the thermal-cycling reliability (i.e. $-65^{\circ}C$ to $150^{\circ}C$) of the semiconductor devices utilizing lead-on-chip (LOC) die attach technique. In-situ examinations show that conventional single-dicing process directly attacks the edge region of diced devices but dual-dicing process effectively protects the edge region of diced devices from dicing-induced mechanical damage. Probably, this is because the preferential and sacrificial fracture of notched regions induced on the active surface of wafers saves the edge regions. It was also investigated through thermal-cycling tests that the number of thermal-cycling induced failures is much lower at the dual-dicing process than the single-dicing process.

• KIPS Transactions on Computer and Communication Systems
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• v.10 no.11
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• pp.291-296
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• 2021

The development of the Internet of Things(IoT) requires large computational resources for tasks from numerous devices. Mobile Edge Computing(MEC) has attracted a lot of attention in the IoT environment because it provides computational resources geographically close to the devices. Task offloading to MEC servers is efficient for devices with limited battery life and computational capability. In this paper, we assumed an industrial IoT environment requiring high reliability. The complexity of optimization problem in industrial IoT environment with many devices and multiple MEC servers is very high. To solve this problem, the problem is divided into two. After selecting the MEC server considering the queue status of the MEC server, we propose an offloading decision algorithm that optimizes reliability and energy consumption using genetic algorithm. Through experiments, we analyze the performance of the proposed algorithm in terms of energy consumption and reliability.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.17 no.4
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• pp.1147-1161
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• 2023

The Internet of Things (IoT) requires a new processing model that will allow scalability in cloud computing while reducing time delay caused by data transmission within a network. Such a model can be achieved by using resources that are closer to the user, i.e., by relying on edge computing (EC). The amount of IoT data also grows with an increase in the number of IoT devices. However, building such a flexible model within a heterogeneous environment is difficult in terms of resources. Moreover, the increasing demand for IoT services necessitates shortening time delay and response time by achieving effective load balancing. IoT devices are expected to generate huge amounts of data within a short amount of time. They will be dynamically deployed, and IoT services will be provided to EC devices or cloud servers to minimize resource costs while meeting the latency and quality of service (QoS) constraints of IoT applications when IoT devices are at the endpoint. EC is an emerging solution to the data processing problem in IoT. In this study, we improve the load balancing process and distribute resources fairly to tasks, which, in turn, will improve QoS in cloud and reduce processing time, and consequently, response time.

• Electronics and Telecommunications Trends
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• v.35 no.6
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• pp.78-87
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• 2020

With the evolution of the Internet of Things (IoT), a computing paradigm shift from cloud to edge computing is rapidly taking place to effectively manage the rapidly increasing volume of data generated by various IoT devices. Edge computing is computing that occurs at or near the physical location of a user or data source. Placing computing services closer to these locations allows users to benefit from faster and more reliable services, and enterprises can take advantage of the flexibility of hybrid cloud computing. This paper describes the concept and main benefits of edge computing and presents the trends and future prospects for edge computing technology.

• Wind and Structures
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• v.16 no.3
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• pp.263-278
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• 2013

The fatigue load of a turbine blade has become more important because the size of commercial wind turbines has increased dramatically in the past 30 years. The reduction of the fatigue load can result in an increase in operational efficiency. This paper numerically investigates the load reduction of large wind turbine blades using active aerodynamic load control devices, namely trailing edge flaps. The PD and LQG controllers are used to determine the trailing edge flap angle; the difference between the root bending moment and its mean value during turbulent wind conditions is used as the error signal of the controllers. By numerically analyzing the effect of the trailing edge flaps on the wind turbines, a reduction of 30-50% in the standard deviation of the root bending moment was achieved. This result implies a reduction in the fatigue damage on the wind turbines, which allows the turbine blade lengths to be increased without exceeding the designed fatigue damage limit.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.418-420
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• 2019

Sensor node and edge device for multi-sensing of marine IoT service is proposed. Especially, the proposed devices are based on the management and data process through the closed network (i.e., private network) as well as the commercial public network provided by major communication service providers.