• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.5B
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• pp.317-326
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• 2012

Recently, many researchers have studied to solve the energy consumption of network equipments since the interest of Green IT has been increased. In this paper, we apply Low Power Idle (LPI) to OBS network to reduce energy consumption of network devices. Many previous researches have focused on maximizing the sleep time of network equipments to increase the energy saving efficiency of LPI. But transition overhead caused by LPI might not only depreciate the performance of energy saving but also increase packet delay. In this paper, Transition Decision (TD) algorithm is proposed to improve energy saving efficiency by reducing the number of unnecessary transition and guarantee the required QoS such as packet delay. To evaluate the performance of proposed algorithm, we model OBS edge router with LPI by OPNET and analyze the performance of the proposed algorithm in views of energy saving, transition count and average packet delay.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• IEMEK Journal of Embedded Systems and Applications
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• v.15 no.4
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• pp.159-166
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• 2020

The IBC (Intra-Body Communication) benefits from a wireless communication system for exchanging various kinds of digital information through wearable electronic devices and sensors. The IBC using the human body as the transmission channel allows wireless communication without the transmitting radio frequency waves to the air. This paper discusses the results of experiments on electrostatic coupling IBC based on FSK (Frequency Shift Keying) and 1 bit error correction. We implemented FSK communication and 1 bit error correction algorithm using the MCU boards and aluminum tape electrodes. The transmitter modulates digital data using 50% duty square wave as carrier signal and transmits data through human body. The receiver performs ADC (Analog to Digital Conversion) on carrier signal from human body. In order to figure out the frequency of carrier signal from ADC results, we applied zero-crossing algorithm which is used to detect the edge characteristic in computer vision. Experiment results shows that digital data modulated as square wave can be successfully transmitted through human body by applying the proposed architecture of a 1ch GPIO as a transmitter and 1ch ADC for as a receiver. Also, this paper proposes 1 bit error correction technique for reliable IBC. This technique performs error correction by utilizing the feature that carrier signal has 50% duty ratio. When 1 bit error correction technique is applied, the byte error rate at receiver side is improved around 3.5% compared to that not applied.

• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.89-97
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• 2007

This paper presents a new circuit topology of active edge resonant snubbers assisted half-bridge soft switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed half-bridge high frequency PWM inverter with a high frequency planar transformer link in addition to input DC busline side power semiconductor switching devices for PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC buslines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, a high switching frequency IGBTs can be actually selected in the frequency range of 60 kHz under the principle of soft switching. The performance evaluations of the experimental setup are illustrated practically. The effectiveness of this new converter topology is proved for such low voltage and large current DC-DC power supplies as DC bus feeding from a practical point of view.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.7
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• pp.1030-1040
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• 2018

In Distributed Mobility Management (DMM) protocol, the mobility functions are distributed to network edge closer to mobile users. DMM protocol has some advantages of low-cost traffic delivery, optimized routing path, high scalability. However, it needs many mobile anchors to exchange signaling messages and it results in a high signaling cost. Thus, previous works suggested the hybrid DMM protocol to reduce the high signaling cost for long-live sessions and this paper extends a hybrid scheme to the NEMO environment. The mobile routers are installed at vehicles and can move together with several mobile devices. So we can define the high-mobility property for mobile routers and suggest the hybrid scheme using this property. According to the high-mobility property of mobile routers, we can distribute the mobile anchors or allocate a centralized mobile anchor. In this paper, we mathematically analyze the performance of the proposed NEMO-enabled hybrid DMM protocol and show superior performance.

• Journal of Surface Science and Engineering
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• v.49 no.2
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• pp.152-158
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• 2016

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.399-402
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• 2006

This paper presents a new circuit topology of dc bus line switch-assisted half-bridge soft switching PWM inverter type dc-dc converter for arc welder. The proposed power converter is composed of typical voltage source half-bridge high frequency PWM inverter with a high frequency transformer link in addition to dc bus line side power semiconductor switching devices fer PWM control scheme and capacitive lossless snubbers. All the active power switches in the half-bridge arm and dc bus lines can achieve ZCS turn-on and ZVS turn-off commutation operation and consequently the total turn-off switching losses can be significantly reduced. As a result, a high switching frequency of using IGBTs can be actually selected more than about 20 kHz. The effectiveness of this new converter topology is proved for low voltage and large current dc-dc power supplies such as arc welder from a practical point of view.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1263-1274
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• 1996

In this paper, as elastic-plastic fracture toughness test under mixed mode loading was proposed using a single edge-cracked specimen subjected to bending moment(M), shearing force(F), and twisting moment(T). The J-integral of a crack in the specimen is expressed in the form J=$J_I$+ $J_II$$J_III$, where $J_I$, $J_II$ and $J_III$ are the components of mode I, mode II and mode III deformation, respectively. $J_I$, $J_II$ and $J_III$ can be estimated from M-$\theta$ ($\theta$;crack opening angle), F-U(U; crack shear displacement) and T-$\alpha$ ($\alpha$;crack twisting angle). In order to obtain the the M<-TEX>$\theta$, F-U and T-$\alpha$ diagram inreal time, a new deformaiton gage for mixed mode loading was proposed using the optical position sensing device(PSD). The elastic-plastic fracture toughness test was carried out with an aluminum alloy. The loading apparatus was designed and manufactured for this experiment. For the loading condition of the crack initatio in the mixed mode, the MMT -3(mode I+ mode II+ mode III) has the lowest values out of the all specimens. This implies that MMT-3 is possible of the crackinitation at lower load, if the specimen acts on together with the torque under the same loading condition. An elastic-plastic fracture toughness test using the PSD brings a successful experimentation in measuring the crack deformation(mode I+ mode II+ mode III).