• 한국안광학회지
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• 제13권1호
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• pp.71-76
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• 2008

목적: 저온에서 열처리에 의해 소다-라임-실리카 유리 위에 강한 UV방사 나노결정 ZnO박막을 단순하고 효율적 방법으로 개선하고자 한다. 방법: 소다-라임-실리카 유리 위에 코팅되고 전열처리 및 300$^{\circ}C$의 후열처리를 행하여 제조된 나노 결정질 ZnO 박막의 결정 구조적, 표면 형상적 및 광학적 특성을 X-선 회절 분석, 전계방사 주사형 전자 현미경, 원자간력 현미경, ultra violet - visible - near infrared spectrophotometer 및 photoluminescence를 이용하여 분석하였다. 결과: 가시광 영역에서 높은 투과율과 자외부에서 뚜렷한 흡수밴드를 갖는 c-축으로 고배향된 ZnO 박막을 300$^{\circ}C$의 후열처리를 통하여 얻을 수 있었다. 비교적 뚜렷한 near band edge 발광을 보이는 photoluminescence 스펙트럼이 나타났으며, 결함에 의한 완만한 녹색 발광은 거의 관찰되지 않았다. 결론: 앞으로 본 연구는 300$^{\circ}C$ 이하의 저온에서 저렴하고 쉽게 ZnO을 기초로한 광전기 소자에 적용될 것이다.

• 한국결정성장학회지
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• 제32권4호
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• pp.121-127
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• 2022

초광역대 반도체인 β-Ga₂O₃은 고전력 반도체 소재에 대한 유망한 응용으로 인해 큰 주목을 받고 있다. 5가지 다른 다형 중 가장 안정적인 상인 β-Ga₂O₃는 4.9 eV의 넓은 밴드갭과 8 MV/cm의 높은 항복 전계를 갖는다. 또한, 이는 용융 소스로부터 성장될 수 있어 전력반도체용 SiC, GaN 및 다이아몬드와 같은 다른 와이드 밴드갭 반도체보다 더 높은 성장률과 더 낮은 제조 비용으로 성장이 가능하다. 이 연구에서 β-Ga₂O₃ 단결정 성장은 EFG(edge-defined film-fed growth) 방법에 의해 성장되었다. 성장 방향과 주면을 각각 β-Ga₂O₃ 결정의 [010] 방향과 (100)면으로 성장하였다. Raman 분석의 스펙트럼으로 β-Ga₂O₃ 잉곳의 결정상과 불순물을 확인하였고, 고해상도 X선 회절(HRXRD)을 이용하여 결정 품질과 결정 방향을 분석하였다. 또한 EFG 방법으로 성장한 β-Ga₂O₃ 리본형태의 잉곳을 각 위치별로 결정 품질과 다양한 특성을 체계적으로 분석하였다.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• 한국멀티미디어학회논문지
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• 제20권8호
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• pp.1369-1378
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• 2017

Pub/Sub (Publish/Subscribe) paradigm is a simple and easy to use model for interconnecting applications in a distributed environment. In general, subscribers register their interests in a topic or a pattern of events and then asynchronously receive events matching their interest, regardless of the events' publisher. In order to build a low latency lightweight pub/sub system for Internet of Things (IoT) services, we propose a GQSFPS (Group Quorum System-based Fog Pub/Sub) system that is a core component in the event-driven service oriented architecture framework for IoT services. The GQSFPS organizes multiple installed pub/sub brokers in the fog servers into a group quorum based P2P (peer-to-peer) topology for the efficient searching and the low latency accessing of events. Therefore, the events of IoT are cached on the basis of group quorum, and the delay-sensitive IoT applications of edge devices can effectively access the cached events from group quorum fog servers in low latency. The performance of the proposed GQSFPS is evaluated through an analytical model, and is compared to the GQPS (grid quorum-based pud/sub system).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.196.2-196.2
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• 2015

There are various issues fabricating the successful and efficient solar cell structures. One of the most important issues is band alignment technique. The solar cells make the carrier in their active region over the p-n junction. Then, electrons and holes diffuse by minority carrier diffusion length. After they reach the edge of solar cells, there exist large energy barrier unless the good electrode are chosen. Many various conductor with different work functions can be selected to solve this energy barrier problem to efficiently extract carriers. Tungsten oxide has large band gap known as approximately 3.4 eV, and usually this material shows n-type property with reported work function of 6.65 eV. They are extremely high work function and trap level by oxygen vacancy cause them to become the hole extraction layer for optical devices like solar cells. In this study, we deposited tungsten oxide thin films by sputtering technique with various sputtering conditions. Their electrical contact properties were characterized with transmission line model pattern. The structure of tungsten oxide thin films were measured by x-ray diffraction. With x-ray photoelectron spectroscopy, the content of oxygen was investigated, and their defect states were examined by spectroscopic ellipsometry, UV-Vis spectrophotometer, and photoluminescence measurements.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.227-230
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• 2003

In this paper, a full bridge edge-resonant zero voltage mode based soft-switching PWM DC-DC power converter with a high frequency center tapped transformer link stage is presented from a practical point of view. The power MOSFETS operating as synchronous rectifier devices are implemented in the rectifier center tapped stage to reduce conduction power losses and also to extend the transformer primary side power MOSFETS ZVS commutation area from the rated to zero-load without a requirement of a magnetizing current. The steady-state operation of this phase-shift PWM controlled power converter is described in comparison with a conventional ZVS phase-shift PWM DC-DC converter using the diodes rectifier. Moreover, the experimental results of the switching power losses analysis are evaluated and discussed in this paper. The practical effectiveness of the ZVS phase-shift PWM DC-DC power converter treated here is actually proved by using 2.5kW-32kHz breadboard circuit. An actual efficiency of this converter is estimated in experiment and is achieved as 97$\%$ at maximum.

• 한국전자통신학회논문지
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• 제12권5호
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• pp.777-782
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• 2017

신호의 도래각(: Angle-of-Arrival, AOA) 추정기 및 간섭 제거기 등으로 구성된 적응 빔형성기 기반의 신호정보 수집(: Signal Intelligence, SIGINT) 시스템은 레이더나 위성 등과 같은 각종 장비를 활용하여 다양한 신호정보를 수집하기 위한 최첨단 기술이다. 본 논문에서는 도래각 추정기와 적응 빔형성기로 구성된 효율적인 신호정보 수집 시스템의 구조를 제안한다. 다양한 신호의 도래각 정보를 추정하기 위해 MUSIC(: Multiple Signal Classification) 알고리즘을 사용하고, 불필요한 간섭 신호를 제거하기 위해 MVDR(: Minimum Variance Distortionless Response) 기법을 사용한다. 또한, 컴퓨터 시뮬레이션을 통해 제안된 적응 빔형성기의 성능을 평가한다.

• 한국멀티미디어학회논문지
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• 제9권8호
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• pp.963-970
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• 2006

본 논문에서는 저가형 CSTN-LCD(Color Super-Twisted Nematic Liquid Crystal Display)에 사용하는 동영상 프로세서를 제안한다. 제안된 프로세서는 SFP(SubFrame Pattern) 기법을 적용하여 계조 확장을 할 뿐 아니라 플리커(flicker)현상을 제거하였고 BFI(Black Field Insertion) 기법을 적용하여 액정의 응답시간을 보상하였다. 그리고 화질 향상을 위한 에지 강조 기법과 보간기법을 적용하였다. 하드웨어 구조는 FPGA 프로토타입 보드를 사용하여 검증하였다. 제안된 동영상 프로세서는 PDA(Personal Digital Assistants), 모바일 폰과 PMP(Portable Multimedia Player) 등에 사용되어 질 수 있다.

• 한국정밀공학회지
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• 제22권9호
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• pp.27-33
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• 2005

This study deals with the truing of diamond wheel fur the manufacture of micro v-shaped grooves with fine sharp edges in the grinding. Fine micro v-shaped grooves are key components to fabricate LGP(light guide plate), optical fiber connector and so on. Conventional v-shaped groove methods such as etching and lithography are difficult to make grooves with accuracy and cutting by lathe is difficult to select target materials. Therefore, as a preliminary stage to developing the grinding technology that will be expected fabrications for micro 3-dimensional structure of high effectivity and accuracy and freed up the restrictions of machinability to the materials for micro v-shaped grooves, truing is carried out with resin bond diamond wheel and electroforming diamond wheel using a cup-type truer. From the experimental results, it is found that the effects according to working direction of the cup-type truer and the restrainable methods of plastic deformation that is generated at wheel edge are examined. As a result, fine micro v-shaped diamond wheel was obtained, which are applicable to micro grinding for optical devices.

• 전자공학회논문지D
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• 제35D권8호
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• pp.15-23
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• 1998

Single crystalline I $n_{x}$G $a_{1-x}$ N thin film was grwon by MOCVD on (001) sapphire substrate for the blue light emitting devices. A good quality of I $n_{0.13}$G $a_{0.87}$N/GaN heterostructure grwon above 700.deg. C was confiremed by various characterization techniques of AFM, RHEED and DC-XRD. Through PL measurement at room temperautre for the Si-Zn co-doped I $n_{x}$G $a_{a-x}$N/GaN structure grwon at 800.deg. C to obtain blue wavelength emission, 460-470 nm and 425 nm emission peak were observed, which are believed to be from donor-to-acceptor pair transition and band edge emission of In/x/G $a_{1-x}$ N, respectively. The result of PL measurement of the undoped MQW I $n_{x}$G $a_{1-x}$ N layer at low temperature confirmed that the strong MQW peak was resulted by exciton from the GAN barrier and carrier of DA pair confined into the well layer.ll layer.yer.r.