• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.96-102
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• 2020

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹ cm^-2 and edge dislocation density of 3.8 × 10⁹ cm^-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.44-44
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• 2003

Scandium을 소량 첨가한 Al합금은 용체화 처리 후 시효에 의해 강화되며, 합금의 주 강화상은 Ll2 type의 규칙구조를 갖는 A1$_3$Sc상으로 열처리시 아주 미세한 정합의 구형입자로 석출한다. Scandium은 Al합금에서 첨가원소의 at%에 따른 경량화 효과가 Gold 다음으로 크다. 현재까지의 Al-Sc계 합금에 대한 연구는 시효경화에 따른 기계적 특성 변화에 대해서만 이루어져 왔으나 본 연구에서는 투과전자현미경을 이용하여 열처리에 따른 미세조직의 변화, 급냉 상태에서 생성된 A13Sc입자의 형성 및 계면구조, 시효에 따른 석출거동을 규명하였다. 실험에 사용된 alloy는 미국의 Ashurst 사에서 제조된 Al-2wt%Sc모합금과 순도 99.9%의 Al을 혼합하여 Arc melting법으로 제조하였다. Primary A13Sc상은 Ll2 type으로 응고시에 용융상태에서 먼저 핵생성되어 Al의 핵생성 site로 작용한다. 635$^{\circ}C$에서 용체화 처리한 시편에서는 수백 nm 크기를 갖는 $Al_3$Sc상이 계면과 matrix내에 구형으로 존재함을 확인하였다. 수백 nm 크기의 $Al_3$Sc상의 내부에는 역위상 경계(Antiphase boundary)이 존재로 인한 특징적인 contrast가 관찰되었으며, 이 $Al_3$Sc상은 응고시 생성된 작은 $Al_3$Sc상들이 모여져 생성된 것으로 추측된다. 수백 nm 크기 의 $Al_3$Sc사와 Al matrix 사이의 계면에는 격자상수 차이에 의한 많은 edge dislocation들이 관찰된다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.6 s.177
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• pp.1565-1574
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• 2000

Surface edge crack subjected to contact stresses is analysed. A punch with corner radii is considered to press the semi-infinite plane. Partial slip problem is solved when a shear force is applied to the punch. Dislocation density function method is used to solve the present mixed mode crack problem. The crack length of positive K1 is examined, which is affected by the ratio of the flat portion to the total width of the punch. Surface traction during one cycle of the shear force is evaluated to simulate the fretting condition. The compliance change of the contact surface is also investigated during the shear cycle. It is found that the crack grows during only a part of the cycle, which may be termed as effective period of crack growing. A design method for restraining the fretting failure is discussed, from which recommendable geometry of the punch is suggested.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• Nuclear Engineering and Technology
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• v.43 no.5
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• pp.421-428
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• 2011

The out-of-pile mechanical performance and microstructure of recrystallized Zr-1.5 Nb-S alloy was investigated. The strength of the recrystallized Zr-1.5Nb-O-S alloys was observed to increase with the addition of sulfur over a wide temperature range, from room temperature up to $300^{\circ}C$. A yield drop and stress serrations due to dynamic strain were observed at room temperature and $300^{\circ}C$. Wavy and curved dislocations and loosely knit tangles were observed after strained to 0.07 at room temperature, suggesting that cross slip is easier. At $300^{\circ}C$, however, dislocations were observed to be straight and aligned along the slip plane, suggesting that cross slip is rather difficult. At $300^{\circ}C$, oxygen atoms are likely to exert a drag force on moving dislocations, intensifying the dynamic strain aging effect. Oxygen atoms segregated at partial dislocations of a screw dislocation with the edge component may hinder the cross slip, resulting in the rather straight dislocations distributed on the major slip planes. Recrystallized Zr-Nb-S alloys exhibited ductile fracture surfaces, supporting the beneficial effect of sulfur in zirconium alloys. Oxidation resistance in air was also found to be improved with the addition of sulfur in Zr-1.5 Nb-O alloys.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.2
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• pp.32-36
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• 2001

We investigate the surface order, defects and morphology of hexagonal columnar mesophases, Having a crown ether at one end which forms the center of the column and three fluorinated tails at the other, The orientation of the columns was successfully controlled by surface anchoring: Columns were aligned perpendicularly to an evaporated carbon surface, and the planar alignment do asymmetric compounds was induced by a water surface. TEM images show that there is a high degree of perfection in the packing do the cylinders. The hexagonal columnar mesophase (F(sub)h) was confirmed by direct images and the corresponding electron diffractions, where ordered cylindrical moieties are packed on a hexagonal lattice. The column of 12F8-ABG-15C5 was much straighter, compared with that of 12F8-AG-B15C5, resulting from the degrees of regular stacking. Elementary edge dislocation, grain boundary and +1/2 disclination have been observed, although the defects are generally rare.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

• Geophysics and Geophysical Exploration
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• v.15 no.2
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• pp.92-101
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• 2012

Three-dimensional finite-difference simulation in a small-scale half-sphere basin with planar free-surface is performed for an arbitrary shear-dislocation point source. A new scheme to deal with free-surface boundary condition is presented. Then basin parameters are examined to understand main characteristics on ground-motion response in the basin. To analyze the frequency content of ground motion in the basin, spectral amplitudes are compared with each other for four sites inside and outside the basin. Also particle motions for those sites are examined to find which kind of wave plays a dominant role in ground-motion response. The results show that seismic energy is concentrated on a marginal area of the basin far from the source. This focusing effect is mainly due to constructive interference of the direct Swave with basin-edge induced surface waves. Also, ground-motion amplification over the deepest part of the basin is relatively lower than that above shallow basin edge. In the small-scale basin with relatively simple bedrock interface, therefore, the ground-motion amplification may be more related to the source azimuth or direction of the incident waves into the basin rather than depth of it.

• The Journal of Art Theory & Practice
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• no.16
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• pp.107-137
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• 2013

This paper examines a number of Korean artists-Whanki Kim, Po Kim, Byungki Kim, Lim Choong-Sup, Min Byung-Ok and etc-working in New York in the 1960s and 1970s, focusing on their motivations to head for the U.S. and their life and activity in the newly-emerged city of international art. The thesis was conceived based upon the fact that New York has been one of the major venues for Korean artists in which to live, study, travel and stay after the Korean War. Moreover, the United States, since 1945, has had a tremendous influence upon Korea politically, socially, economically, and, above all, culturally. This study is divided into three major sections. The first one attends to the reasons that these artists moved out of Korea while including in this discussion, the long-standing yearning of the Korean intelligentsia to experience more modernized cultures, and American postwar cultural policies that stimulated them to envision life beyond their national parameters, in a country heavily entrenched in Cold War ideology. The second part examines these artists' pursuit of abstraction in New York where it was already losing its avant-garde status as opposed to the style's cutting edge cache in Korea. While their turn to abstraction was outdated from New York's critical perspective, it was seen to be de rigueur for Koreans that had developed through phases from Art Informel in the 1960s to Dansaekhwa (monochromatic paintings) in the 1970s. The third part focuses on the artists' struggle while caught between a dualistic framework such as Korea/U.S, East/West, center/margin, traditional/modern, and abstraction/figuration. Despite such dichotomic frames, they identified abstract art as the epitome of pure, absolute art, which revealed their beliefs inherited from western modernism during the colonial period before 1910-1945. In fact, their reality as immigrants in America put them in a diasporic space where they oscillated between the fixed, essentialist Korean identity and the floating, transforming identity as international artists in New York or Korean-American artists. Thus their abstract and semi-abstract art reflect the in-between identity from the diasporic space while demonstrating their yearning for a land of political freedom, intellectual fulfillment and the continuity of modern art's legacy imposed upon them over the course of Korea's tumultuous history in the twentieth century and making the artists as precursor of transnational, transcultural art of the global age in the twenty-first century.