• Title/Summary/Keyword: ETRi

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An RFID Tag Using a Planar Inverted-F Antenna Capable of Being Stuck to Metallic Objects

  • Choi, Won-Kyu;Son, Hae-Won;Bae, Ji-Hoon;Choi, Gil-Young;Pyo, Cheol-Sig;Chae, Jong-Suk
    • ETRI Journal
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    • 제28권2호
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    • pp.216-218
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    • 2006
  • This letter presents the design for a low-profile planar inverted-F antenna (PIFA) that can be stuck to metallic objects to create a passive radio frequency identification (RFID) tag in the UHF band. The designed PIFA, which uses a dielectric substrate for the antenna, consists of a U-slot patch for size reduction, several shorting pins, and a coplanar waveguide feeding structure to easily integrate with an RFID chip. The impedance bandwidth and maximum gain of the tag antenna are about 0.3% at 914 MHz for a voltage standing wave ratio (VSWR) of less than 2 and 3.6 dBi, respectively. The maximum read range is about 4.5 m as long as the tag antenna is on a metallic object.

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Design of Middleware for Interactive Data Services in the Terrestrial DMB

  • Lee, Gwang-Soon;Yang, Kyu-Tae;Kim, Kwang-Yong;Hahm, Young-Kwon;Ahn, Chung-Hyun;Lee, Soo-In
    • ETRI Journal
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    • 제28권5호
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    • pp.652-655
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    • 2006
  • In this letter, we introduce a new middleware architecture and its generic application programming interface (API) (called the T-DMB MATE API) for terrestrial digital multimedia broadcasting (T-DMB). Middleware in T-DMB enables inter-operable applications to be downloaded from both broadcast and telecommunication networks in advance and to be executed in any type of T-DMB receiver. The middleware we introduce here is especially designed to support a proposed method for application provisions applied to a concept of application module appropriate to the service environment of T-DMB. We also verify the designed T-DMB MATE API through the implementation of the middleware and its application in a PC-based receiver.

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Right-Angle-Bent CPW for the Application of the Driver-Amplifier-Integrated 40 Gbps TW-EML Module

  • Yun, Ho-Gyeong;Choi, Kwang-Seong;Kwon, Yong-Hwan;Choe, Joong-Seon;Moon, Jong-Tae;Lee, Myung-Hyun
    • ETRI Journal
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    • 제28권5호
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    • pp.648-651
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    • 2006
  • In this letter we present a right-angle-bent coplanar waveguide (CPW) which we developed for the application of the driver amplifier-integrated (DAI) 40 Gbps traveling wave electroabsorption modulated laser module. The developed CPW realized parallel progression of the radio frequency (RF) and light using a dielectric overlay structure and wedge bonding on the bending section. The measured $S_{11}$ and $S_{21}$ of the developed CPW were kept below-10 dB up to 35 GHz and -3 dB up to 43 GHz, respectively. These measured results of the CPW were in good agreement with the simulation results and demonstrated the applicability of the CPW to the 40 Gbps communication module.

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Widely Tunable Grating Cavity Lasers

  • Kwon, Oh-Kee;Sim, Eun-Deok;Kim, Kang-Ho;Kim, Jong-Hoi;Yun, Ho-Gyeong;Kwon, O-Kyun;Oh, Kwang-Ryong
    • ETRI Journal
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    • 제28권5호
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    • pp.545-554
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    • 2006
  • A widely tunable multi-channel grating cavity laser is proposed and experimentally demonstrated. The device is implemented in Littman configuration with an echelle grating based on Rowland circle construction and realized by monolithically integrating all elements in an InP substrate. Lasing wavelength is selected by turning on an amplifier and the appropriate channel element in the array, and it is tuned by controlling light deflection electrically. The 6-channel device exhibits a tuning range of about 50 nm with a side mode suppression ratio of more than 30 dB. This is accomplished by adjusting the applied current of the dispersive element and phase control section.

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Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation

  • Oh, Him-Chan;KoPark, Sang-Hee;Ryu, Min-Ki;Hwang, Chi-Sun;Yang, Shin-Hyuk;Kwon, Oh-Sang
    • ETRI Journal
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    • 제34권2호
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    • pp.280-283
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    • 2012
  • By inserting $H_2O$ treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS.

Measurement-Based Propagation Channel Characteristics for Millimeter-Wave 5G Giga Communication Systems

  • Lee, Juyul;Liang, Jinyi;Kim, Myung-Don;Park, Jae-Joon;Park, Bonghyuk;Chung, Hyun Kyu
    • ETRI Journal
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    • 제38권6호
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    • pp.1031-1041
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    • 2016
  • This paper presents millimeter-wave (mmWave) propagation characteristics and channel model parameters including path loss, delay, and angular properties based on 28 GHz and 38 GHz field measurement data. We conducted measurement campaigns in both outdoor and indoor at the best potential hotspots. In particular, the model parameters are compared to sub-6 GHz parameters, and system design issues are considered for mmWave 5G Giga communications. For path loss modeling, we derived parameters for both the close-in free space model and the alpha-beta-gamma model. For multipath models, we extracted delay and angular dispersion characteristics including clustering results.

3.5 inch QCIF AMOLED Panel with Ultra Low Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate

  • Kim, Yong-Hae;Chung, Choong-Heui;Moon, Jae-Hyun;Park, Dong-Jin;Lee, Su-Jae;Kim, Gi-Heon;Song, Yoon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.717-720
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    • 2007
  • We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

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Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications

  • Kim, Jin-Soo;Lee, Jin-Hong;Hong, Sung-Ui;Kwack, Ho-Sang;Lee, Chul-Wook;Oh, Dae-Kon
    • ETRI Journal
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    • 제26권5호
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    • pp.475-480
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    • 2004
  • Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

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RFID Tag Antenna Coupled by Shorted Microstrip Line for Metallic Surfaces

  • Choi, Won-Kyu;Kim, Jeong-Seok;Bae, Ji-Hoon;Choi, Gil-Young;Pyo, Cheol-Sig;Chae, Jong-Suk
    • ETRI Journal
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    • 제30권4호
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    • pp.597-599
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    • 2008
  • This letter presents the design of a small and low-profile RFID tag antenna in the UHF band that can be mounted on metallic objects. The designed tag antenna, which uses a ceramic material as a substrate, consists of a radiating patch and a microstrip line with two shorting pins for a proximity-coupled feeding structure. Using this structure, impedance matching can be simply obtained between the antenna and tag chip without a matching network. The fractional impedance bandwidth for $S_{11}$ <3 dB and radiation efficiency are about 1.4% and 56% at 911 MHz, respectively. The read range is approximately from 5 m to 6 m when the tag antenna is mounted on a metallic surface.

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InP-Based Polarization-Insensitive Planar Waveguide Concave Grating Demultiplexer with Flattened Spectral Response

  • Kwon, Oh-Kee;Lee, Chul-Wook;Lee, Dong-Hun;Sim, Eun-Deok;Kim, Jong-Hoi;Baek, Yong-Soon
    • ETRI Journal
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    • 제31권2호
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    • pp.228-230
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    • 2009
  • InP-based planar waveguide 48-channel concave grating demultiplexers with a channel spacing of 0.8 nm (100 GHz) are described and demonstrated. Polarization insensitivity and flattened spectral response are successfully achieved by the introduction of a polarization compensator and a two-focus grating, respectively. The fabricated device shows a polarization-dependent wavelength shift of less than 20 pm and a -3 dB spectral width of about 0.55 nm (68.75 GHz) over all channels.

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