• 제목/요약/키워드: ETRI

검색결과 9,860건 처리시간 0.033초

Fabrication of Thin Film Transistor on PES substrate using Sequential Lateral Solidification Crystallized Poly-Si Films

  • Kim, Yong-Hae;Chung, Choong-Heui;Yun, Sun-Jin;Park, Dong-Jin;Kim, Dae-Won;Lim, Jung-Wook;Song, Yoon-Ho;Moon, Jae-Hyun;Lee, Jin-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.269-271
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    • 2005
  • Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

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40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth

  • Kwon, Yong-Hwan;Choe, Joong-Seon;Sim, Jae-Sik;Kim, Sung-Bock;Yun, Ho-Gyeong;Choi, Kwang-Seong;Choi, Byung-Seok;Nam, Eun-Soo
    • ETRI Journal
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    • 제31권6호
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    • pp.765-769
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    • 2009
  • In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm.

Oxide TFT Structure Affecting the Device Performance

  • KoPark, Sang-Hee;Cho, Doo-Hee;Hwang, Chi-Sun;Ryu, Min-Ki;Yang, Shin-Hyuk;Byun, Chun-Won;Yoon, Sung-Min;Cheong, Woo-Seok;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.385-388
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    • 2009
  • We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

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Novel Bumping Material for Solder-on-Pad Technology

  • Choi, Kwang-Seong;Chu, Sun-Woo;Lee, Jong-Jin;Sung, Ki-Jun;Bae, Hyun-Cheol;Lim, Byeong-Ok;Moon, Jong-Tae;Eom, Yong-Sung
    • ETRI Journal
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    • 제33권4호
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    • pp.637-640
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    • 2011
  • A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder-on-pad technology of the fine-pitch flip-chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 ${\mu}m$ in one direction.

A Subthreshold CMOS RF Front-End Design for Low-Power Band-III T-DMB/DAB Receivers

  • Kim, Seong-Do;Choi, Jang-Hong;Lee, Joo-Hyun;Koo, Bon-Tae;Kim, Cheon-Soo;Eum, Nak-Woong;Yu, Hyun-Kyu;Jung, Hee-Bum
    • ETRI Journal
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    • 제33권6호
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    • pp.969-972
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    • 2011
  • This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-${\mu}m$ CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply.

Development of ETRI satellite simulator-ARTSS

  • Kang, J.Y.;Lee, S.;Hong, K.Y.;Shin, K.K.;Rhee, S.W.;Choi, W.S.;Oh, H.S.;Kim, J.M.;Chung, S.J.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1994년도 Proceedings of the Korea Automatic Control Conference, 9th (KACC) ; Taejeon, Korea; 17-20 Oct. 1994
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    • pp.49-53
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    • 1994
  • Advanced Real-Time Satellite Simulator(ARTSS) has been developed to support the telemetry, tracking and command operations of the ETRI satellite control system and to provide satellite engineers a more powerful and informative satellite simulations tool on the desktop. To provide extensive simulation functions for a communication satellite system in the pre-operational and operational missions, ARTSS uses a geosynchronous orbit(GEO) satellite model consisting of the attitude and orbit control subsystem, the power subsystem, the thermal subsystem, the telemetry, command and ranging subsystem, and the communications payload subsystem. In this paper, the system features and functions are presented and the satellite subsystem models are explained in detail.

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