• ETRI Journal
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• v.34 no.6
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• pp.970-973
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• 2012

In this letter, we report on the development progress of a pressure control organic vapor deposition (PCOVD) technology used to design and build a large area deposition system. We also investigate the growth characteristics of a pentacene thin film by PCOVD. Using the PCOVD method, the mobility and on/off current ratio of an organic thin-film transistor (OTFT) on a plastic substrate are $0.1cm^2/Vs$ and $10^6$, respectively. The developed OTFT can be applied to a flexible display on a plastic substrate.

• ETRI Journal
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• v.34 no.6
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• pp.946-949
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• 2012

We present the optimization of a birefringence-enhanced-waveguide (BWG)-based polarization beam splitter (PBS) in a Mach-Zehnder interferometer (MZI) configuration and analyze the structure-dependent or polarization-dependent phase difference, using a delay-line MZI (DL-MZI). We fabricate the DL-MZI using silica-based planar lightwave circuit technology and, using the DL-MZI, demonstrate the ability to optimize a PBS by measuring the birefringence of the BWG and structure-dependent phase offset.

• ETRI Journal
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• v.25 no.6
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• pp.535-537
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• 2003

We propose a rigorous 2D approximation technique for the 3D waveguide structures; it can minimize the well-known approximation errors of the commonly used effective index method. The main concept of the proposed technique is to compensate for the effective cladding index in the equivalent slab model of the original channel waveguide from the modal effective index calculated by the nonuniform 2D finite difference method. With simulations, we used the proposed technique to calculate the coupling characteristics of a directional coupler by the 2D beam propagation method, and the results were almost exactly the same as the results calculated by the 3D beam propagation method.

• ETRI Journal
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• v.25 no.6
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• pp.510-516
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• 2003

In this paper, we describe the development of a platform-based SoC of a 32-bit smart card. The smart card uses a 32-bit microprocessor for high performance and two cryptographic processors for high security. It supports both contact and contactless interfaces, which comply with ISO/IEC 7816 and 14496 Type B. It has a Java Card OS to support multiple applications. We modeled smart card readers with a foreign language interface for efficient verification of the smart card SoC. The SoC was implemented using 0.25 ${\mu}m$ technology. To reduce the power consumption of the smart card SoC, we applied power optimization techniques, including clock gating. Experimental results show that the power consumption of the RSA and ECC cryptographic processors can be reduced by 32% and 62%, respectively, without increasing the area.

• ETRI Journal
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• v.27 no.3
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• pp.337-340
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• 2005

A spot-size converted Fabry-Perot laser diode (LD) was flip-chip bonded to a silica-terraced planar lightwave circuit(PLC) platform to examine the effect of the silica terrace on the heat dissipation of the LD module. From the measurement of the light-current characteristics, it was discovered that the silica terrace itself is not a strong thermal barrier, but the encapsulation of the integrated LD with an index-matching polymer resin more or less deteriorates the heat dissipation.

• ETRI Journal
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• v.25 no.2
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• pp.81-88
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• 2003

We designed a multimode interference (MMI) coupler to use in vertical coupling of double layered polymeric waveguides and analyzed the coupling characteristics by comparing our experimental and simulation results. We found that our proposed new structure, a stepped MMI coupler, is effective in vertical coupling between waveguide layers with a short length of MMI and has a high tolerance for the variation in the structure of an MMI coupler that can be induced as errors in the fabrication process.

• ETRI Journal
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• v.19 no.2
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• pp.35-47
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• 1997

A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

• ETRI Journal
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• v.35 no.1
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• pp.1-6
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• 2013

In this paper, we present an implemented serial 40-Gb/s receiver optical subassembly (ROSA) module by employing a proposed TO-CAN package and flexible printed circuit board (FPCB). The TO-CAN package employs an L-shaped metal support to provide a straight line signal path between the TO-CAN package and the FPCB. In addition, the FPCB incorporates a signal line with an open stub to alleviate signal distortion owing to an impedance mismatch generated from the soldering pad attached to the main circuit board. The receiver sensitivity of the ROSA module measures below -9 dBm for 40 Gb/s at an extinction ratio of 7 dB and a bit error rate of $10^{-12}$.

• ETRI Journal
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• v.40 no.3
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• pp.337-346
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• 2018

In this paper, we propose a grant-aware (GA) scheduling algorithm that can provide higher throughput and lower latency than a conventional dual round-robin matching (DRRM) method. In our proposed GA algorithm, when an output receives requests from different inputs, the output not only sends a grant to the selected input, but also sends a grant indicator to all the other inputs to share the grant information. This allows the inputs to skip the granted outputs in their input arbiters in the next iteration. Simulation results using OPNET show that the proposed algorithm provides a maximum 3% higher throughput with approximately 31% less queuing delay than DRRM.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.923-926
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• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.