• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.135-140
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• 2005

Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.273-278
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• 2007

For the simulation of active region in the quantum cascade lasers (QCL), we solved Schrodinger equation utilizing Runge-Kutta method and Shotting method. Wavelength, phonon resonant energy, and dipole matrix element were simulated with the variation of active region thickness. As a result of such simulation, it was suggested the tolerance range of epi-layer thickness error when 3-quantum well QCL structures are grown.

• 전자공학회논문지 IE
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• v.48 no.2
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• pp.1-5
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• 2011

The epitaxial GaN layer of $120{\mu}m$ ~ $300{\mu}m$ thickness with a stripe Ti mask pattern is performed by hydride vapor phase epitaxy(HVPE). Ti strpie mask pattern is deposited by DC magnetron sputter on GaN epitaxial layer of $3{\mu}m$ thickness is grown by hydride vapor phase epitaxy(HVPE). Void are observed at point of Ti mask pattern when GaN layer is investigated by scanning electron microscope. The Crack of GaN layer is observed according to void when it is grown more thick GaN layer. The full width at half maximum of peak which is measured by X-ray diffraction is about 188 arcsec. It is not affected its crystallization by Ti meterial when GaN layer is overgrown on Ti stripe mask pattern according as it is measure FWHM of overgrowth GaN using Ti material against FWHM of first growth GaN epitaxial layer.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.843-847
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• 2014

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

• Journal of Integrative Natural Science
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• v.16 no.3
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• pp.75-80
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• 2023

Bipolar disorder is a mental illness characterized by extreme mood and behavioral swings, such as highs of euphoria and lows of depression. It is a socially significant disorder in which people with the disorder experience intense mood swings and, for those with severe bipolar disorder, it is even difficult leading a normal life. High stress levels in people with mental illness can lead to neuroendocrine disruption, and it is strongly linked to aging. When the neuroendocrine system becomes vulnerable to these mental illnesses and stress, it is likely to accelerate aging. And it's the epigenetic clock that can measure the extent of this accelerated aging. The Epi clock, a pan tissue clock, measures aging through DNA methylation, and the degree of methylation is modified and changed by environmental conditions in the body. Therefore we wanted to check the changes in the epigenetic age of the patients with bipolar disorder. While we found no significant differences in epigenetic age, we did confirm the possibility that people with bipolar disorder have different methylation than normal people. We also found that the EPIC array data fit better on the Epi clock than on the Horvath clock with age-accelerated data from normal people.

• Progress in Medical Physics
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• v.18 no.3
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• pp.118-125
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• 2007

In this study we estimated a geometric correlation among digitally reconstructed radiographic image (DRRI), kV x-ray image (kVXI) from the On-Board Imager (OBI) and electric portal image (EPI). To verify geometric correspondence of DRRI, kVXI and EPI, specially designed phantom with indexed 6 ball bearings (BBs) were employed. After accurate setup of the phantom on a treatment couch using orthogonal EPIs, we acquired set of orthogonal kVXIs and EPIs then compared the absolute positions of the center of the BBs calculated at each phantom plane for kVXI and EPI respectively. We also checked matching result for obliquely incident beam (gantry angle of $315^{\circ}$) after 2D-2D matching provided by OBI application. A reference EPI obtained after initial setup of the phantom was compared with 10 series of EPIs acquired after each 2D-2D matching. Imaginary setup errors were generated from -5 mm to 5 mm at each couch motion direction. Calculated positions of all center positions of the BBs at three different images were agreed with the actual points within a millimeter and each other. Calculated center positions of the BBs from the reference and obtained EPIs after 2D-2D matching agreed within a millimeter. We could tentatively conclude that the OBI system was mechanically quite reliable for image guided radiation therapy (IGRT) purpose.

• Investigative Magnetic Resonance Imaging
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• v.3 no.1
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• pp.78-83
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• 1999

Purpose : To evaluate the language areas activated by fMRI during different reading tasks and to assess the difference of activated areas according to each reading task. Materials and Methods : Functional maps of the language area were obtained during three reading tasks(Korean consonant letter, pseudoword, and word) in nine right-handed volunteers(7 males 2 females). MR examinations were performed at 1.5T scanner with EPI BOLD technique(gradient echo shot EPI, TR/TE 3000/60, flip angle $90^{\circ}$, matrix $64{\times}64$, 5mm thickness, no slice gap). Each task consisted of three resting periods and two activation periods and each period lasted 30 seconds. We used SPM program for the postprocessing of images and signification level was set at p<0.01. Activated areas were topographically analyzed in each stimulus. Results : Significant activated signals were demonstrated in all volunteers. Activated signals were seen in the frontal, temporal, parietal and occipital lobes during reading tasks and they were lateralized to the left hemisphere except occipital lobe. Letter and pseudoword produced stronger activated signals than word, and the activated signals were more lateralized to the left hemisphere in pseudoword reading than in letter reading. Conclusion : Activated signals were induced in the language areas by reading task of letter or wordform. Greater activation of language areas was induced when letter or pseudowords were presented than familiar words.

• Journal of KIISE:Software and Applications
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• v.37 no.4
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• pp.273-281
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• 2010

In this paper, we propose an automatic segmentation method of the endo- and epicardial boundary by using ray-casting profile based on intensity distribution and gradient information in CT images. First, endo-cardial boundary points are detected by using adaptive thresholding and seeded region growing. To include papillary muscles inside the boundary, the endo-cardial boundary points are refined by using ray-casting based profile. Second, epi-cardial boundary points which have both a myocardial intensity value and a maximum gradient are detected by using ray-casting based adaptive gradient profile. Finally, to preserve an elliptical or circular shape, the endo- and epi-cardial boundary points are refined by using elliptical interpolation and B-spline curve fitting. Then, curvature-based contour fitting is performed to overcome problems associated with heterogeneity of the myocardium intensity and lack of clear delineation between myocardium and adjacent anatomic structures. To evaluate our method, we performed visual inspection, accuracy and processing time. For accuracy evaluation, average distance difference and overalpping region ratio between automatic segmentation and manual segmentation are calculated. Experimental results show that the average distnace difference was $0.56{\pm}0.24mm$. The overlapping region ratio was $82{\pm}4.2%$ on average. In all experimental datasets, the whole process of our method was finished within 1 second.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.