• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(2)
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• pp.973-979
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• 1995

The input equivalent noise charge (ENC) of hydrogenated amorphous silicon radiation detector diodes was measured and analyzed. The noise sources of amorphous silicon diodes were analyzed into three sources; shot noise, flicker noise and thermal noise from the contact resistance. By comparing the measured ENC with the calculated signal charge in uniform generation case, the signal-to-noise ratio (S/N) for the sample diodes is estimated as a function of the detector bias and the shaping time of Gaussian pulse shaper. The maximum S/N occurred at the bias level just above the full depletion voltage for shaping time of 2∼3 ${\mu}$sec. The developed method is useful in optimum design or amorphous silicon p-i-n diodes for charged particulate radiation spectroscopy.

• Journal of Radiation Protection and Research
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• 제35권2호
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• Nuclear Engineering and Technology
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• 제52권7호
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• pp.1503-1510
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• 2020

Ultra-low noise charge sensitive amplifiers (CSAs) based on various types of circuit board substrates, such as FR4, Teflon, and ceramics (Al₂O₃) with two different designs, PA1 and PA2, have been developed. They were tested to see the noise effect from the dielectric loss of the substrate capacitance before and after irradiation. If the electronic noise from the CSAs is to be minimized and the energy resolution enhanced, the shaping time has to be optimized for the detector, and a small feedback capacitance of the CSA is favorable for a better SNR. Teflon- and ceramic-based PA1 design CSAs showed better noise performance than the FR4-based one, but the Teflon-based PA1 design showed better sensitivity than ceramic based one at a low detector capacitance (<10 pF). In the PA2 design, the equivalent noise and the sensitivity were 0.52 keV FWHM for a silicon detector and 7.2 mV/fC, respectively, with 2 ㎲ peaking time and 0.1 pF detector capacitance. After 10, 100, 10³, 10⁴, and 10⁵ Gy irradiation the ENC and sensitivity characteristics of the developed CSAs based on three different substrate materials are also discussed.

• Journal of Radiation Protection and Research
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• 제35권2호
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• pp.69-76
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• 2010

현재 개발중에 있는 이중 산란형 컴프턴 카메라는 두 대의 산란부 검출기(양면 실리콘 스트립 검출기, DSSD)와 하나의 흡수부 검출기(NaI(Tl) 섬광 검출기)로 구성되며, 소형이면서도 높은 영상해상도를 제공할 수 있는 구조를 가지고 있다. 본 연구에서는 이중 산란형 컴프턴 카메라를 구성하고 있는 감마선 검출기들의 에너지 분해능 및 시간 분해능을 평가하고, 산란부 검출기의 에너지 분해능에 영향을 미치는 인자들을 등가 노이즈 전하(equivalent noise charge)를 통하여 분석하였다. DSSD-1은 평균적으로 59.5 keV 피크($^{241}Am$)에 대하여 $25.2keV{\pm}0.8keV$ FWHM의 에너지 분해능을 보였으며, DSSD-2는 $31.8keV{\pm}4.6keV$ FWHM의 에너지 분해능 지니고 있는 것으로 확인되었다. DSSD의 시간 분해능은 57.25 ns FWHM으로 평가되었고, NaI(Tl) 섬광 검출기의 시간 분해능은 7.98 ns FWHM이었다. 또한 이중산란형 컴프턴 카메라를 이용하여 $^{137}Cs$ 점선원에 대한 컴프턴 영상을 획득한 후 성능을 평가하였다. 이번 실험을 통해서 영상해상도 8.4 mm FWHM (각 분해능 $8.1^{\circ}$ FWHM)을 획득하였고, 영상감도는 $1.5{\times}10^{-7}$(고유 효율=$1.9{\times}10^{-6}$)으로 나타났다.

• Journal of Radiation Protection and Research
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• 제41권2호
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• pp.81-86
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• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.