• Title/Summary/Keyword: ELNES

Search Result 3, Processing Time 0.018 seconds

Local Electronic Structures of $SiO_2$ Polymorph Crystals: Insights from O K-edge Energy-Loss Near-Edge Spectroscopy (산소 K-전자껍질 에너지-손실 흡수끝-부근 구조 양자계산을 이용한 $SiO_2$ 동질이상 광물의 전자구조 연구)

  • Yi, Yoo-Soo;Lee, Sung-Keun
    • Journal of the Mineralogical Society of Korea
    • /
    • v.23 no.4
    • /
    • pp.403-411
    • /
    • 2010
  • Essentials of understanding the geochemical evolution and geophysical processes in Earth's system are macroscopic properties and atomistic (and electronic) structures of Earth materials. Recent advances in quantum calculations based on the density functional theory allow us to unveil the previously unknown details of local atomic structures in diverse silicates in Earth's interior. Here, we report the O K-edge ELNES (energy-loss near-edge structure; ELNES) spectra and PLDOS (partial local density of states) for oxygen atoms in ${\alpha}$-quartz and stishovite using the quantum calculations based on FP-LAPW (full potential linearized augmented plane wave). The calculated O K-edge ELNES spectrum of ${\alpha}$-quartz shows a strong peak at ~538 eV due to comer-sharing oxygen linking two $SiO_4$ tetrahedra and that for stishovite shows two distinct peaks at ~537 and ~543 eV corresponding to edge-sharing oxygen linking $SiO_6$ octahedra. The significant differences in spectral features of O K-edge ELNES spectra suggest that the O K-edge features can be useful indicator to distinguish various oxygen sites in diverse crystal and amorphous silicates in the Earth's interior.

Quantum Chemical Calculations of the Effect of Si-O Bond Length on X-ray Raman Scattering Features for MgSiO3 Perovskite (양자화학계산을 이용한 Si-O 결합길이가 MgSiO3 페로브스카이트의 X-선 Raman 산란 스펙트럼에 미치는 영향에 대한 연구)

  • Yi, Yoo Soo;Lee, Sung Keun
    • Journal of the Mineralogical Society of Korea
    • /
    • v.27 no.1
    • /
    • pp.1-15
    • /
    • 2014
  • Probing the electronic structures of crystalline Mg-silicates at high pressure is essential for understanding the various macroscopic properties of mantle materials in Earth's interior. Quantum chemical calculations based on the density functional theory are used to explore the atomic configuration and electronic structures of Earth materials at high pressure. Here, we calculate the partial density of states (PDOS) and O K-edge energy-loss near-edge structure (ELNES) spectra for $MgSiO_3$ perovskite at 25 GPa and 120 GPa using the WIEN2k program based on the full-potential linearized projected augmented wave (FP-LPAW) method. The calculated PDOS and O K-edge ELNES spectra for $MgSiO_3$ Pv show significant pressure-induced changes in their characteristic spectral features and relative peak intensity. These changes in spectral features of $MgSiO_3$ Pv indicate that the pressure-induced changes in local atomic configuration around O atoms such as Si-O, O-O, and Mg-O length can induce the significant changes on the local electronic structures around O atoms. The result also indicates that the significant changes in O K-edge features can results from the topological densification at constant Si coordination number. This study can provide a unique opportunity to understand the atomistic origins of pressure-induced changes in local electronic structures of crystalline and amorphous $MgSiO_3$ at high pressure more systematically.

Principle and Applications of EELS Spectroscopy in Material Characterizations (재료 분석에서 전자 에너지 손실 스펙트럼 (EELS)의 원리 및 응용 연구)

  • Yoon, Sang-Won;Kim, Kyou-Hyun;Ahn, Jae-Pyoung;Park, Jong-Ku
    • Journal of Powder Materials
    • /
    • v.14 no.3 s.62
    • /
    • pp.157-164
    • /
    • 2007
  • An electron energy loss spectroscopy (EELS) instrument attached on transmission electron microscopy (TEM) becomes a powerful and analytical tool for extracting the noble information of materials using the enhancement of TEM images, elemental analysis, elemental or chemical mapping images, electron energy loss near edge structure (ELNES), and extended energy-loss fine structure (EXELFS). In this review, the principle and applications of EELS which is widely used in material, life, and electronic sciences were introduced.