• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.500-507
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• 1997

For fine control of operating temperature of shape memory alloy, we investigated the effect of thermal teratment of shape memory alloy with the impurity kind. The martensitic transformation temperature in a Cu-17.25Zn-15Al and Cu-17.25Zn-15Al-1Ag/Fe was measured using electrical resistivity as a function of quenching temperature. Order-disorder phase transition temperatures in parent phase were measured and kind of transition were distinguised by DSC(differential scanning calorimeter) with heating rate variation. And structual changes were studied with XRD. For the Cu-17.25Zn-15Al shape memory alloy, the order-disorder phase transition temperature, $T_{B2}$ and $T_{L21}$ was 809K and 610K and for the Cu-17.25Zn-15Al-1Ag and Cu-17.25Zn-15Al-1Fe specimen $T_{B2}$ and $T_{L21}$ was 794K and 610K, and 803K and 613K, respectively. In all the specimens, quenching from near $T_{B2}$ leads to an increase in martensitic temperature, whereas quenching from near $T_{L21}$ leads to an decrease in martensitic temperature.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.131-136
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• 2008

We performed a non-destructive geophysical survey such as an elastic wave survey, electric specific resistance survey, plate loading test, etc. in order to grasp the structure and status of the ground around the pillar gate and to provide the directions and design data for preservation and maintenance during reconstruction. The result of electric specific resistance survey shows 50-1300 ohm-m range of general electric specific resistance distribution. Besides, the positions around 1m south of stone pillars, between stone pillar No.3 and 4, and 1m north of stone pillar No.2 and 3 show abnormality of relatively lower electric specific resistance than their surroundings. The abnormality of low electric specific resistance appearing between stone pillar No.3 and 4 shows consistency with the abnormal section appearing from the result of elastic wave reflection survey. The result of a plate loading test shows that allowable bearing force is over $10.70tf/m^2$, and the settlement amount at this time was calculated as 19.635mm. The design load during reconstruction of pillar gates was calculated as $16.37t/m^2$ by applying assumption values, which is far more than the allowable bearing force, so it is judged that a measure to strengthen the foundation ground is necessary.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.16-23
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• 1992

High $T_c$, superconductor $(Y_{1-x}Eu_x)Ba_2Cu_3O_{7-{\delta}}$ (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were prepared and the physical properties were observed. XRD analysis showed that the structures of all the specimen were orthorhombic and the lattice parameters a, b and c increased with the increasing x value. Electrical resistivity and magnetization measurements revealed that pure high $T_c$, superconducting phases were formed at above 90 K. The critical temperatures increased with increasing the amount of Eu. From the measurement of magnetization and the size of the grains using SEM micrographs, volume diamagnetic susceptibilities for each specimen were calculated. These values decreased with the increasing x value. The composition of Ba in the lattice site decreased as the concentration of Eu increased, and this was confirmed by EPMA. It was found out that the volume diamagnetic susceptibility of each specimen was directly influenced by the composition of Ba in the lattice site.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Geophysics and Geophysical Exploration
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• v.13 no.4
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• pp.407-415
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• 2010

MT soundings were carried out in 2008, in northern Victoria, Australia, as a continuing collaboration research of 2007 between Republic of Korea, Australia, and Japan. The main purpose of this research is to investigate electrical conductivity structure and thus help understanding of tectonic structure in central Victoria, which is believed to be closely linked to mineralization and magmatic processes of this region. The survey area is located in western Lachlan Fold Belts, which is the part of Tasman Fold Belts in southeastern Australia. An MT profile of 2008 is almost parallel to the one of 2007 and approximately 50 km away. The 2D inversion result of MT data also shows that the position of conductivity discontinuity near surface are well matched with the positions of major faults, such as Avoca Fault, which is the structural boundary between Stawell and Bendigo Zones, and Heathcote Fault Zone, which marks the boundary between Bendigo and Melbourne Zones. It is also confirmed from resistivity image that internal faults in Bendigo Zone are in listric form, which is implied to be formed by structural shortening during compressional orogenic activity in Silurian.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.323-329
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• 2000

In this study we have calculated an ideal complex refractive index of a TiN trim used in a layer of anl1reilecnon (I\R) coatmg, [air$ISiO_2ITiNIglass$] in the visible. Also we simulated the rellectance of lwo-layer AR coating by varying the thicknesses of TiN and $SiO_2$ layers, respecl1vely. The simolation results show that we can controllhe lowest reflectance and AR band of tile AR coating. The TIN fihns were fabricated by a RF magnetron sputtering apparalus. The chemical, structural and electrical properties of TiN fih11S were inveshgated by the Rutherford backscattering spech'oscopy (RBS), atomic force microscope (AFM) and 4-point probe. The optical properlies were inve,tigated by the spectrophotometer and vanable angle spectroscopic ellipsometer (VASE). The smface roughness of TiN flhns \vas $9~10\AA$. TIle resistivity of TiN films was TEX>$360~730\mu$\Omega $ cm. The ,toichlOllletry of TiN film was 1'1: O:N = I: 0.65 :0.95 and ilic oxygen wa~ found on ilie smface. With these experimental and simu]al1on resulLs, we deposited duo: two-layer AR coating, [air$ISiO_2ITiNIglass$] and the refleClance was under 0.5% ill the regIOn of 440-650 run. 0 run.