• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.792-794
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• 1998

The TPD and the $Alq_3$ film are widely used as a hole transport layer and an emitter layer respectively, in organic electroluminescent(EL) device (ITO Glass/TPD/$Alq_3$/metal). In this structure, we fabricated two models. Model(1) having ITO glass/$Alq_3$/Al structure and model(2) having ITO Glass/TPD/$Alq_3$/Al structure were fabricated by the vacuum evaporation. The comparison between model(1) and model(2) was made about the absorbance, the wave length, the current-voltage characteristic and the ln I - $V^{(1/2)}$characteristic respectively. Electroluminescence of green and wavelength of 510[nm] were observed in both model. We observed absorbance from 320[nm] to 430[nm] in $Alq_3$ material and from 250[nm] to 400[nm] in TPD material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.578-580
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• 2002

A bright and highly monochromatic red organic electroluminescent device based on a poly(N-vinylcarbazole) host was made. The device structure consists of poly(N-vinylcarbazole) dispersed with a europium complex as an emitting layer and a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The EL cell exhibited just characteristic emission of europium ion.

• 한국진공학회지
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• 제18권1호
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• pp.37-43
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• 2009

$In_xGa_{1-x}N$/GaN 다중양자우물 구조의 EL 특성을 온도와 주입전류 변화에 따른 특성을 조사하였다 저전류와 고전류 주입시 EL 효율의 온도 의존 변화는 매우 다르게 나타나는데, 이러한 온도와 전류의 변화에 의한 독특한 EL 효율의 변화는 내부전기장의 존재 하에 순방향 바이어스에 기인한 외부전기장의 영향인 것으로 볼 수 있다. 그리고 $In_xGa_{1-x}N$/GaN 다중양자우물 구조에서 In 성비의 증가는 발광파장위치의 적색이동을 보였다. 15K에서 주입 전류의 증가에 따라 녹색 양자우물 구조는 80 meV와 청색 양자우물 구조는 22 meV의 청색 편이를 하였다. 이는 전류의 증가에 의해 단위 시간당 생성되는 캐리어 수가증가하게 되고 그에 따라 subband가 급격히 채워지는 band filling 현상이 일어나게 되어 짧은 파장에서 재결합이 증가하기 때문이다. 그리고 청색과 녹색 다중 양자우물구조의 짧은 파장 쪽으로의 편이 차이는 In 농도에 기인한 것으로 In 농도가 높으면 양자우물 깊이가 증가되어 더 강한 양자속박효과가 작용하여 캐리어 구속력이 증가하기 때문 것으로 볼 수 있다.

• 폴리머
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• 제25권3호
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• pp.399-405
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• 2001

Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]를 2:1, 1:1, 1:2의 몰 비로 공중합한 뒤 유기 발광 소자를 제작하였다. 이렇게 공중합한 고분자의 광ㆍ전기적인 특성을 PL, EL 스펙트럼과 I-V, V-L 곡선을 이용하여 조사하였고, 전자 흡수 스펙트럼과 순환 전압 전류 곡선을 이용하여 band diagram을 얻었다. P(OT/FPT)(1:1)의 경우 LUMO 값이 -3.35eV로 가장 낮았다. EL과 PL 스펙트럼에서는 fluorophenyl 기의 함량이 증가함에 따라 발광 파장이 장파장으로 이동하였으나, P(OT/FPT)(1:2)의 경우에는 단파장으로 이동하였다 이것은 fluoro-phenyl 기의 함량이 증가하여 고분자 사슬이 뒤틀리게 되어 ${\pi}$-conjugation이 깨어져 공액 길이가 짧아지는 효과를 나타냈기 때문이다. P(OT/FPT)(1:1)는 34cd/$m^2$으로 가장 우수한 휘도를 갖는 짙은 적색 발광을 하였다. 또한 발광 효율에서도 P(OT/FPT)(1:1)가 가장 우수한 것으로 나타났다. P(OT/FPT)(1:2)의 경우 필름 표면이 고르지 못하여 국부적으로 누설 전류가 흐르기 때문에 발광 효율이 낮아지는 것으로 믿어진다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• 한국세라믹학회지
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• 제41권5호
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• pp.406-409
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• 2004

교류 구동 분산형 EL(ACPEL)에 사용되는 ZnS:Cu 청색 형광체를 고상 반응법으로 제조하였다. 1차 소성 후 인위적 결함을 형광체 표면에 도입함으로서 2차 소성 중에 의해 일어나는 ZnS의 상전이 및 EL 발광 휘도에 미치는 영향을 연구하였다. 즉 1차 소성된 형광체를 ball-mill 공정에서 인위적으로 표면에 defect를 형성시켜 ZnS의 저온상인 cubic으로의 전이가 용이하게 하여 EL구동하에서 발광 휘도를 증가시켰다. Ball-mill의 공정 변수로는 milling 시간과 rpm 등을 고려하여 각 조건에 따른 효과를 고찰하였으며, 발광 spectrum을 측정한 결과, 최적 조건에서 인위적인 결함을 형성하지 않은 형광체 보다 발광 휘도가 약 30% 이상 증가하였다. 또한 각기 다른 ball-mill 조건으로 합성된 형광체의 결정상을 분석하고 비교하였으며 상전이 특성에 따른 발광 휘도 변화를 고찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1404-1407
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• 2005

We have fabricated organic light-emitting diodes using poly(N-vinylcarbazole)(PVK) doped with N,N'- diphenyl-N,N'-bis(3-methylphenyl)-[l,l'-biphenyl]- 4,4/-diamine (TPD) as the hole transport layer. TPD molecules act as the trapping sites in PVK and reduce the hole mobility, which can enhance the electronhole balance in the emitting layer, resulting in the enhanced device performance. We have found the optimum ratio of TPD to PVK for the EL efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.621-624
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• 2007

As a new fluoranthene derivative, a synthesis of benzo[k]fluoranthene was suggested, so new blue emitting materials, 7,12-diphenylbenzo[k] fluoranthene [DPBF] and 7,8,10- triphenylfluoranthene [TPF] were synthesized. $EL_{max}$ wavelength of the device using DPBF as an emitting layer was 436 and 454nm in the deepblue region, which are similar values with PL. The device that used DPBF as an emitting layer showed high efficiency of 2.11cd/A and the excellent color coordinate value of (0.161, 0.131) in deep-blue region.

• Journal of Advanced Marine Engineering and Technology
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• 제30권4호
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• pp.514-519
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• 2006

SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.