• Title/Summary/Keyword: EL(electroluminescence)

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A Study on the Enhancement of Emission Efficiency of an Organic EL Devices Using the RF Plasma (RF 플라즈마를 이용한 유기 EL소자의 발광 효율에 관한 연구)

  • 박상무;김형권;신백균;임경범;이덕출
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.9
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    • pp.400-406
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    • 2003
  • Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

Synthesis and Electroluminescent Properties of Imidazole Derivatives (Imidazole 유도체들의 합성과 유기 발광 특성 연구)

  • 박종욱;서현진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12
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    • pp.1121-1124
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    • 2003
  • We report the photo (PL) and electro luminescence (EL) properties of new conjugated compounds based on imidazole moiety, 4,4' -di(4,5 diphenyl-N-imidazolyl)stilbene(DDPIS) and 4,4'-di(2,4,5-triphenyl-N-imidazolyl)stilbene(DTPIS), as emitting materials. ITO/m-MTDATA/NPB/DDPIS/Alq3/LiF/AI device shows blue EL spectrum at 456 ㎚ and 0.3 cd/ A and turn on voltage at 7 ∼ 8 V. DTPIS shows blue EL spectrum at around λmax=453㎚ and 0.5 cd/A efficiency in ITO/m-MTDATA/NPB/DTPIS/Alq3/LiF/Al device.

Temporal Response of the Organic Electroluminescent Device with a Vacuum-Deposited Poly(p-phenylene) Thin Film

  • Kang, G.W.;Lee, C.H.;Song, W.J.;Seoul, C.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.207-208
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    • 2000
  • The temporal response of the electroluminescence (EL) has been studied in the organic electroluminescent devices fabricated with a vacuum-deposited poly(p-phenylene) (PPP) thin film upon the application of a rectangular driving voltage. The blue EL emission arises with a delay time of several hundred nanoseconds and then saturates with the rise time of less than microsecond. The EL delay time is considered as the transit time of holes in the PPP thin film since the hole mobility is much larger than the electron mobility in PPP. The hole mobility is estimated to be ${\sim}$ $1{\times}10^{-5}$ $cm^2/Vs$ in the vacuum-deposited PPP film.

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A Study on the Electrode formation of an Organic EL Devices using the RF Plasma (RF 플라즈마를 이용한 유기 EL 소자의 전극형성에 관한 연구)

  • 이은학
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.2
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    • pp.228-235
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    • 2004
  • In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

Light Emitting Characteristics of Multi-layer OLEO Fabricated with DCM (DCM 계열을 이용한 OLED의 전기적인 발광 특성에 관한 연구)

  • Chun, Min-Ho;Yun, Suk-Won;Lim, Sung-Tack;Shin, Dong-Myung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.57-60
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    • 2002
  • In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

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The Electroluminescence Properties of Sq-doped Alq3 Organic Thin Films (Sq가 도핑된 Alq3 유기 박막의 발광 특성)

  • 박종관;김형권;김종택;육재호
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.5
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    • pp.1-6
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    • 2000
  • We prepared organic light-emitting-diodes (LEDs) with a squarylium(Sq)-doped aluminum quinoline(Alq3) emission layer by the vapor deposition method. We discussed their electro-luminescence(EL) and electrical properties. The EL from Sq had a peak wavelength of 670nm and a half-width of 30nm. Only the EL from So(purely red) could be observed at the doping concentration of over 15mol%, but the luminance were low (0.21cd/$m^2$, 0.1cd/$m^2$) and EL efficiency was under the $10^{-2}$W. Although Sq molecules seemed to act as trap site in Alq3 molecules, they acted as carrier drafts site at doping concentration of over 5mol%.

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Studies on the Characteristics of Single-Layered Organic EL Device Using a Copolymer Having Hole and Electron Transporting Moieties (정공 및 전자 전달체의 기능기를 가진 공중합체를 사용한 단층형 유기 발광소자의 특성에 관한 연구)

  • 이창호;김승욱;오세용
    • Polymer(Korea)
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    • v.26 no.4
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    • pp.543-550
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    • 2002
  • We have synthesized a novel carrier transporting copolymer having triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. Single-layered organic electroluminescent (EL) devices consisted of ITO/copolymer and emitting materials (DCM, coumarin 6, DPvBi)/Al exhibited maximum external quantum efficiency when the ratio of hole transporting unit and electron transporting unit is 6:4 and the content of emitting material is 30 wt%. Especially, the devices emitted the light of red (620 nm), green (520 nm) and blue (450 nm) corresponding to the emitting materials, respectively. A maximum luminance of ITO/copolymer (6:4) and DCM (30 wt%)/Al EL device was about 500 cd/$m^2$ at a DC drive voltage of 12V.

Optoelectronics Properties of In0.27Ga0.73N/GaN Multi-Quantum-Well Structure (In0.27Ga0.73N/GaN 다중 양자우물 구조에 대한 광전기적 특성)

  • Park, Hun-Bo;Bae, In-Ho;Kim, Ki-Hong
    • Korean Journal of Materials Research
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    • v.17 no.9
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    • pp.489-492
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    • 2007
  • Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

Top-emission Electroluminescent Devices based on Ga-doped ZnO Electrodes (Ga-doped ZnO 투명전극을 적용한 교류무기전계발광소자 특성 연구)

  • Lee, Wun Ho;Jang, Won Tae;Kim, Jong Su;Lee, Sang Nam
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.44-48
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    • 2017
  • We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

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Effect of Stabilizers on Performance of Electroluminescence Display Device (안정화제가 무기 전계발광 디스플레이 소자 성능에 미치는 영향)

  • Shin, DongHyuk;Lim, JongChoo
    • Korean Chemical Engineering Research
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    • v.45 no.4
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    • pp.356-363
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    • 2007
  • The stability of paste solutions for electroluminescence display(ELD) device was found to be greatly affected by kind and dosage of a stabilizer used. The stabilizer Disperbyk-180 showed the best stability performance against phosphor paste solutions among the stabilizers used during this study. The phosphor paste solutions remained stable over 90 days with a wide range of added amounts of Disperbyk-180. Based on the above results, screen printing test was performed. The addition of Disperbyk-180 into phosphor and dielectric paste solutions produced improved qualities such as no phase separation, no bubble generation and no significant viscosity change during printing process. Especially for the phosphor paste solution, both uniformity and brightness were significantly improved and the excellent adhesion onto the ITO film was found. The ELD device fabricated using the above same paste solutions showed brightness of $57.6cd/m^2$ at 100V and 400 Hz. The half lifetime of ELD device was measured as 1,250 hours and almost the same value observed with imported commercial paste solutions.