• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.203-210
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• 2004

Effects of various pretreatments on the adhesion of copper-coated polymer films were investigated. Copper-coated polymer films were prepared by an electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a DC bias system at room temperature. PET(polyethylene terephthalate) film was employed as a substrate material and it was pretreated by industrially feasible methods such as chromic acid, sand-blasting, oxygen plasma and ion-implantation treatment. Surface characterization of the copper-coated polymer film was carried out by AFM(Atomic Force Microscopy) and FESEM(Field Emission Scanning Electron Microscopy). Surface energy was calculated by based on the value of the contact angle measured. The adhesion of copper/PET films was determined by a pull-off test according to ASTM D-5179. It was found that suitable pretreatment of the PET substrate was required for obtaining good adhesion property between copper films and the substrate. In this study the highest adhesion was observed in sand-blasting, and then followed by those of acid and oxygen plasma treatment. However, the effect of surface energy was insignificant in our experimental range. This is probably due to compensating the difference in surface energy from various pretreatments by exposing substrate to ECR plasma for 5 min or longer at the early stage of the copper deposition. Therefore, it can be concluded that surface roughness of the polymer substrate plays an important role to determine the adhesion of copper-coated polymer for the deposition of copper by ECR-MOCVD.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.212-217
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• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.92-98
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• 1993

Si 기판 위에 증착된 Al 박막을 질소 ECR 플라즈마에 노출시켜 시료를 제작하고 분광타원해석법으로 분석한 결과 Al박막에 질화층이 형성되었음을 확인하였다. 사용한 질소 ECR 플라즈마의 전자온도와 전자밀도는 챔버내의 위치에 따라 각각 10~20eV, 0.9~1.2$\times$1011/㎤의 값을 보였다. 질소 ECR 플라즈마에 노출된 기판은 급격한 온도상승을 보였으며 노출시킨 뒤 5~6분이 지나면 $500^{\circ}C$ 근처에서 포화상태를 이루었다. 분광타원해석상수인 $\Delta$와 Ψ를 분석한 결과 증착된 Al의 두께는 시료에 따라 $140~160AA$이었고 표면에 형성된 AIN 층의 두께는 질소 ECR 플라즈마에 노출된 시간이 길수록 그리고 시료의 위치가 공명지점에 가까울수록 증가하였다. AlN층의 두께가 노출시간의 제곱근에 비례하는 것으로부터 AlN층은 Al의 표면에 흡착된 질소가 Al속으로 확산하여 이루어진 것으로 설명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.227-227
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• 2011

최근 ECR (Electron Cyclotron Resonance) 가열에 의한 플라즈마 소스는 고밀도 플라즈마를 유지하면서 고진공 운전을 동시에 만족시켜 다양한 플라즈마 응용 분야에서 많은 관심을 받고 있다. 그 중 HNB (Hyperthermal Neutral Beam)를 이용한 플라즈마 소스에 있어서 ECR 플라즈마 소스는 고진공에서도 높은 플라즈마 밀도를 유지할 수 있기 때문에 기존의 HNB 플라즈마 소스인 ICP (Inductive Coupled Plasma)의 운전압력의 한계점을 해결하여 높은 HNB 방향성(~1mTorr이하)을 가진 고밀도플라즈마를 발생시킬 수 있을 것이라 제안되었다. ECR 플라즈마가 HNB 소스로서 적합하기 위해서는 플라즈마 소스의 대면적화와 균일화가 동시에 이루어져야 한다. 본 연구에서는 이러한 요구에 부합하여 Lisitano coil를 이용한 균일한 대면적 ECR 플라즈마 소스를 설계하였다. 최적의 설계와 진단을 위한 Lisitano Coil antenna 내의 B-field 분포 시뮬레이션과 Langmuir Probe 진단이 이루어졌다.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.83-90
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• 1998

LPCVD를 이용하여 증착한 SiN과 ECR plasma CVD를 이용하여 증착한 SiC의 물 성과 적용가능성을 시험하였다. LPCVD로 증착된 SiN은 열처리 없이 저 응력의 박막형성이 가능했으며 가시광투과도 표면 평활도 역시 우수하였다. 탄성계수 값이 크지 않아 자성센서 의 지지구조로 사용할 경우 자기공명에 의한 진동을 크게 구속하지 않아 유리할것으로 기대 된다. 반면 ECR plasma CVD로 증착된 SiC는 SiN보다는 못하지만 다른 방법에 의해 증착 된 SiC에 비해서는 가시광 투과도 및 표면 평활도가 후수하므로 X-선 조사에 대한 안정성 과 더불어 X-선 마스크용 membrane으로서 사용이 적절할 것으로생각된다.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Progress in Superconductivity and Cryogenics
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• v.17 no.2
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• pp.36-40
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• 2015

Electron cyclotron resonance (ECR) ion source is an essential component of heavy-ion accelerator. For a given design, the intensities of the highly charged ion beams extracted from the source can be increased by enlarging the physical volume of ECR zone [1]. Several models for ECR ion source were and will be constructed depending on their operating conditions [2-4]. In this paper three simulation models with 3, 4 and 6 solenoid system were built, but it's not considered anything else except the number of coils. Two groups of optimization analysis are presented, and the evolution strategy (ES) is adopted as an optimization tool which is a technique based on the ideas of mutation, adaptation and annealing [5]. In this research, the volume of ECR zone was calculated approximately, and optimized designs for ECR solenoid magnet system were presented. Firstly it is better to make the volume of ECR zone large to increase the intensity of ion beam under the specific confinement field conditions. At the same time the total volume of superconducting solenoids must be decreased to save material. By considering the volume of ECR zone and the total length of solenoids in each model with different number of coils, the 6 solenoid system represented the highest coil performance. By the way, a certain case, ECR zone volume itself can be essential than the cost. So the maximum ECR zone volume for each solenoid magnet system was calculated respectively with the same size of the plasma chamber and the total magnet space. By comparing the volume of ECR zone, the 6 solenoid system can be also made with the maximum ECR zone volume.