• Title/Summary/Keyword: EC-STM

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Preparation of Atomically Flat Si(111)-H Surfaces in Aqueous Ammonium Fluoride Solutions Investigated by Using Electrochemical, In Situ EC-STM and ATR-FTIR Spectroscopic Methods

  • Bae, Sang-Eun;Oh, Mi-Kyung;Min, Nam-Ki;Paek, Se-Hwan;Hong, Suk-In;Lee, Chi-Woo J.
    • Bulletin of the Korean Chemical Society
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    • v.25 no.12
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    • pp.1822-1828
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    • 2004
  • Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

Use of Local Electrochemical Methods (SECM, EC-STM) and AFM to Differentiate Microstructural Effects (EBSD) on Very Pure Copper

  • Martinez-Lombardia, Esther;Lapeire, Linsey;Maurice, Vincent;De Graeve, Iris;Klein, Lorena;Marcus, Philippe;Verbeken, Kim;Kestens, Leo;Gonzalez-Garcia, Yaiza;Mol, Arjan;Terryn, Herman
    • Corrosion Science and Technology
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    • v.16 no.1
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    • pp.1-7
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    • 2017
  • When aiming for an increased and more sustainable use of metals a thorough knowledge of the corrosion phenomenon as function of the local metal microstructure is of crucial importance. In this work, we summarize the information presented in our previous publications[1-3] and present an overview of the different local (electrochemical) techniques that have been proven to be effective in studying the relation between different microstructural variables and their different electrochemical behavior. Atomic force microscopy (AFM)[1], scanning electrochemical microscopy (SECM)[2], and electrochemical scanning tunneling microscopy (EC-STM)[3] were used in combination with electron backscatter diffraction (EBSD). Consequently, correlations could be identified between the grain orientation and grain boundary characteristics, on the one hand, and the electrochemical behavior on the other hand. The grain orientation itself has an influence on the corrosion, and the orientation of the neighboring grains also seems to play a decisive role in the dissolution rate. With respect to intergranular corrosion, only coherent twin boundaries seem to be resistant.

The Ways for Bi on Pt to Enhance Formic Acid Oxidation

  • Hyein Lee;Young Jun Kim;Youngku Sohn;Choong Kyun Rhee
    • Journal of Electrochemical Science and Technology
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    • v.14 no.1
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    • pp.21-30
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    • 2023
  • This work presents a correlation between the behavior of formic acid oxidation (FAO) on various Bi-modified Pt(poly) disk electrodes and their morphologies observed on Bi-modified Pt(111) disk electrodes using electrochemical scanning tunneling microscopy (EC-STM) to understand the effects of Bi on Pt. To distinguish the FAO activities of Bi on Pt and plain Pt around Bi, additional Pt was intentionally deposited using two different routes: direct route and iodine route. In direct route, Pt was directly deposited on Bi islands and plain Pt sites around Bi islands, while in iodine route, Pt was exclusively deposited on Bi islands by protecting plain Pt sites with adsorbed iodine. Thus, a comparison of FAO performances on the two Bi-modified Pt electrodes with additional Pt (deposited in the different ways) disclosed a difference in FAO performances on plain Pt sites and Bi islands. When Bi coverage was ~0.04, the Bi deposits were scattered Bi islands enhancing FAO on Pt(poly). The additional Pt deposits using direct route increased FAO efficiency, while the ones using iodine route slightly decreased FAO current. The EC-STM observations indicated that Pt deposits around Bi islands, not on Bi islands, were responsible for the FAO current increase on Bi-modified Pt(poly). The FAO efficiency on Bi-modified Pt(poly) with a Bi coverage of ~0.25 increased by a factor of 2. However, the additional Pt deposits using the two Pt deposition routes notably decreased the FAO current. The dependency of FAO on Bi coverage was discussed in terms of electronic effect and ensemble effect.

Potential Dependence of Electrochemical Etching Reaction of Si(111) Surface in a Fluoride Solution Studied by Electrochemical and Scanning Tunneling Microscopic Techniques

  • Bae, Sang-Eun;Youn, Young-Sang;Lee, Chi-Woo
    • Journal of Electrochemical Science and Technology
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    • v.11 no.4
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    • pp.330-335
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    • 2020
  • Silicon surface nanostructures, which can be easily prepared by electrochemical etching, have attracted considerable attention because of its useful physical properties that facilitate application in diverse fields. In this work, electrochemical and electrochemical-scanning tunneling microscopic (EC-STM) techniques were employed to study the evolution of surface morphology during the electrochemical etching of Si(111)-H in a fluoride solution. The results exhibited that silicon oxide of the Si(111) surface was entirely stripped and then the surface became hydrogen terminated, atomically flat, and anisotropic in the fluoride solution during chemical etching. At the potential more negative than the flat band one, the surface had a tendency to be eroded very slowly, whereas the steps of the terrace were not only etched quickly but the triangular pits also deepened on anodic potentials. These results provided information on the conditions required for the preparation of porous nanostructures on the Si(111) surface, which may be applicable for sensor (or device) preparation (Nanotechnology and Functional Materials for Engineers, Elsevier 2017, pp. 67-91).

EC-STM Studies on Electrochemical Preparation of Si(111)-H Surfaces (Si(111)-H 표면의 전기화학적 제조에 관한 전기화학적 주사터널링현미경법 연구)

  • Bae, Sang-Eun;Lee, Chi-Woo
    • Journal of the Korean Electrochemical Society
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    • v.5 no.3
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    • pp.111-116
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    • 2002
  • Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.

ATM Cell Encipherment Method using Rijndael Algorithm in Physical Layer (Rijndael 알고리즘을 이용한 물리 계층 ATM 셀 보안 기법)

  • Im Sung-Yeal;Chung Ki-Dong
    • The KIPS Transactions:PartC
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    • v.13C no.1 s.104
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    • pp.83-94
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    • 2006
  • This paper describes ATM cell encipherment method using Rijndael Algorithm adopted as an AES(Advanced Encryption Standard) by NIST in 2001. ISO 9160 describes the requirement of physical layer data processing in encryption/decryption. For the description of ATM cell encipherment method, we implemented ATM data encipherment equipment which satisfies the requirements of ISO 9160, and verified the encipherment/decipherment processing at ATM STM-1 rate(155.52Mbps). The DES algorithm can process data in the block size of 64 bits and its key length is 64 bits, but the Rijndael algorithm can process data in the block size of 128 bits and the key length of 128, 192, or 256 bits selectively. So it is more flexible in high bit rate data processing and stronger in encription strength than DES. For tile real time encryption of high bit rate data stream. Rijndael algorithm was implemented in FPGA in this experiment. The boundary of serial UNI cell was detected by the CRC method, and in the case of user data cell the payload of 48 octets (384 bits) is converted in parallel and transferred to 3 Rijndael encipherment module in the block size of 128 bits individually. After completion of encryption, the header stored in buffer is attached to the enciphered payload and retransmitted in the format of cell. At the receiving end, the boundary of ceil is detected by the CRC method and the payload type is decided. n the payload type is the user data cell, the payload of the cell is transferred to the 3-Rijndael decryption module in the block sire of 128 bits for decryption of data. And in the case of maintenance cell, the payload is extracted without decryption processing.