• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.334-340
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• 2008

We investigated the electromagnetically induced transparency (EIT) and the Hanle spectrum in a paraffin coated Rb vapor cell. The EIT spectrum was observed in the $F_g=2$, $3{\rightarrow}F_e=3$ transition of the $^{85}Rb$ $D_1$-line by using two independent external cavity diode lasers, and the Hanle spectrum was observed by using one external cavity diode laser in the $\Lambda$-type scheme between the Zeeman sublevels of the $F_g=2{\rightarrow}F_e=1$ transition of the $^{87}Rb$ $D_1$-line. In the Hanle spectrum, we could observe the dual-structured spectrum in the paraffin coated vapor cell. We investigated the dual-structured lineshape by applying an external magnetic field, and varying the direction of the magnetic field. The narrow linewidth of dual-structured EIT was measured to be approximately 200 Hz.

• Electrical & Electronic Materials
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• v.4 no.2
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• pp.150-158
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• 1991

본 연구에서는 0.80Pb(F $e_{1}$2/N $b_{1}$2/) $O_{3}$-(0.20-x)Pb(F $e_{2}$3/ $W_{1}$3/) $O_{3-x}$Ba(C $u_{1}$2/ $W_{1}$2/) $O_{3}$ (x=0.01, 0.02, 0.03) 세라믹을 소결온도 및 시간을 각각 860~960[.deg.C], 2시간으로 하여 일반 소성법으로 제작하였다. 시편의 조성비와 소결온도에 따른 구조적, 유전적 특성을 조사하였으며 유전손실 특성의 개선을 위해 조성 0.80Pb(F $e_{1}$2/N $b_{1}$2/) $O_{3}$-0.18Pb (F $e_{2}$3/ $W_{1}$3/) $O_{3}$-0.02Ba(C $u_{1}$2/ $W_{1}$2/) $O_{3}$시편에 Mn $O_{2}$를 0~1.25[wt%]로 첨가한 후 유전특성의 변화를 관찰하였다. Mn $O_{2}$의 첨가량이 증가함에 따라 결정립의 크기와 유전상수는 점차 감소하였다. 소결밀도는 900[.deg.C]에서 소결시킨 시편의 경우 최대값을 나타내었다. Ba(C $u_{1}$2/ $W_{1}$2/) $O_{3}$의 양이 0.01에서 0.03[mol]로 증가함에 따라 상전이온도는 38[.deg.C]에서 2[.deg.C]로 감소하였다. 조성 0.80Pb(F $e_{1}$2/N $b_{1}$2/) $O_{3}$0.18Pb(F $e_{2}$3/ $W_{1}$3/) $O_{3}$-0.02Ba(C $u_{1}$2/ $W_{1}$2/) $O_{3}$에 Mn $O_{2}$가 0.25[wt%] 첨가된 시편의 20[.deg.C]에서의 유전상수는 16,700으로 최대값을 유전손실을 1.28[%]로 최소값을 나타내었다. 또한 모든 시편은 온도 및 주파수에 따라 유전상수가 완만하게 변화하는 유전이완 특성을 나타내었다.다.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.19-25
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• 1997

Holographic zone plate (HZP) is fabricated by interfering a plane wave and a spherical wave in a dichromated gelatin (DCG) film obtained from Agfa 8E75HD plates. We have developed a simple theory for HZP considering optical nonlinearity of DCG material. Analysis of our theory for HZP shows that it has infinite focal points at distances f,f/2, f/3,,…. In experiment, we observed the corresponding focal points of up to f/6 when illuminating HZP by a plane wave. It is also shown that the beam profile around the first focal point measured by using a knife-edge scanning method has a Gaussian shape.

• Communications of the Korean Mathematical Society
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• v.37 no.4
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• pp.1025-1039
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• 2022

For given non-negative real numbers 𝛼_k with ∑^m_k=1 𝛼_k = 1 and normalized analytic functions f_k, k = 1, …, m, defined on the open unit disc, let the functions F and Fn be defined by F(z) := ∑^m_k=1 𝛼_kf_k(z), and F_n(z) := n^-1 ∑^n-1_j=0 e^-2j𝜋i/nF(e^2j𝜋i/nz). This paper studies the functions f_k satisfying the subordination zf'_k(z)/F_n(z) ≺ h(z), where the function h is a convex univalent function with positive real part. We also consider the analogues of the classes of starlike functions with respect to symmetric, conjugate, and symmetric conjugate points. Inclusion and convolution results are proved for these and related classes. Our classes generalize several well-known classes and the connections with the previous works are indicated.

• Honam Mathematical Journal
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• v.36 no.2
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• pp.345-355
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• 2014

The main objective of this paper is to obtain a formula containing eleven interesting results for the reducibility of Kamp$\acute{e}$ de F$\acute{e}$riet function. The results are derived with the help of two general results for the series $_2F_1(2)$ very recently presented by Kim et al. Well known Kummer's second theorem and its contiguous results proved earlier by Rathie and Nagar, and Kim et al. follow special cases of our main findings.

• Journal of the Korean Mathematical Society
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• v.41 no.1
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• pp.145-156
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• 2004

Let $D_1,\;D_2$ be convex domains in complex normed spaces $E_1,\;E_2$ respectively. When a mapping $f\;:\;D_1{\rightarrow}D_2$ is holomorphic with f(0) = 0, we obtain some results like the Schwarz lemma. Furthermore, we discuss a condition whereby f is linear or injective or isometry.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.139-142
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• 2000

We present results based on FLAPW local spin density(LSD) calculations of double perovskite structure oxide L $a_2$MnFe $O_{6}$ . The total energy calculations with various spin structures show that this material has a stable ferromagnetic spin configuration. The ionic state of transition metals depend on the spin configuration $_Mn^{4+}$ and F $e^{2+}$ for ferromagnetic structure, M $n^{3+}$ and F $e^{3+}$ for ferrimagnetic structure). It is explained by super exchange interaction between transition metals. The calculated magnetic structure is well matched with recent experimental result.ult.t.

• Journal of applied mathematics & informatics
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• v.24 no.1_2
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• pp.437-448
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• 2007

Suppose K is a nonempty closed convex nonexpansive retract of a real uniformly convex Banach space E with P as a nonexpansive retraction. Let $T_1,\;T_2\;and\;T_3\;:\;K{\rightarrow}E$ be nonexpansive mappings with nonempty common fixed points set. Let $\{\alpha_n\},\;\{\beta_n\},\;\{\gamma_n\},\;\{\alpha'_n\},\;\{\beta'_n\},\;\{\gamma'_n\},\;\{\alpha'_n\},\;\{\beta'_n\}\;and\;\{\gamma'_n\}$ be real sequences in [0, 1] such that ${\alpha}_n+{\beta}_n+{\gamma}_n={\alpha}'_n+{\beta'_n+\gamma}'_n={\alpha}'_n+{\beta}'_n+{\gamma}'_n=1$, starting from arbitrary $x_1{\in}K$, define the sequence $\{x_n\}$ by $$\{zn=P({\alpha}'_nT_1x_n+{\beta}'_nx_n+{\gamma}'_nw_n)\;yn=P({\alpha}'_nT_2z_n+{\beta}'_nx_n+{\gamma}'_nv_n)\;x_{n+1}=P({\alpha}_nT_3y_n+{\beta}_nx_n+{\gamma}_nu_n)$$ with the restrictions $\sum^\infty_{n=1}{\gamma}_n<\infty,\;\sum^\infty_{n=1}{\gamma}'_n<\infty,\; \sum^\infty_{n=1}{\gamma}'_n<\infty$. (i) If the dual $E^*$ of E has the Kadec-Klee property, then weak convergence of a $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is proved; (ii) If $T_1,\;T_2\;and\;T_3$ satisfy condition(A'), then strong convergence of $\{x_n\}$ to some $x^*{\in}F(T_1){\cap}{F}(T_2){\cap}(T_3)$ is obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.5
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• pp.536-541
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• 2003

In order to avoid oxygen contamination on the diamond surface as far as possible during the device process, the A1/Ca $F_2$/diamond MISFET(metal-insulator-semiconductor field-effect transistor) was prepared by ultrahigh vacuum process and its electrical properties were investigated. The surface conductive layer of fluorinated diamond surface was employed for the conducting channel of the MISFET. The observed effective mobility(${\mu}$e$\_$ff/) of the MISFET was 300 c $m^2$/Vs, which is the highest value obtained until now in the diamond FET. Besides, the measured surface state density of the device was ∼10$\^$11//c $m^2$ eV, which is comparable with conventional Si MOSFET$\_$s/(metal-oxide-semiconductor field-effect-transistors). This work is the first report of the fluorinated diamond MISFET prepared by ultrahigh vacuum process and its application to inverter circuit.