• Title/Summary/Keyword: E1 pulse

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A Study on the Si-SiO$_2$Interface State Characteristics of Nonvolatile SNOS FET Memories using The Charge Pumping Method (Charge Pumping 방법을 이용한 비휘발성 SNOS FET기억소자의 Si-SiO$_2$계면상태 특성에 관한 연구)

  • 조성두;이상배;문동찬;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.05a
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    • pp.82-85
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    • 1992
  • In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/~5.6${\times}$10$\^$11/cm$\^$-2/~6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

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Transport of space charge between sub-pixels in AC-plasma cell discharge

  • Lee, S.B.;Park, E.Y.;Han, Y.G.;Moon, M.W.;Oh, P.Y.;Song, K.B.;Lee, H.J.;Son, C.G.;Jeong, S.H.;Yoo, N.L.;Hong, Y.J.;Jeong, S.J.;Kim, J.H.;Park, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.929-931
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    • 2006
  • In this experiment, we have investigated that the transported space charge between sub-pixels in AC-plasma cell discharge. The test pulse 30 V, $5{\mu}s$ was applied to the address electrodes of neighbor cells of discharge occurred cells. And we have measured the transported space charge between sub-pixels in accordance with the various last sustain pulse widths t(time gap between the rising edges of sustain and test pulses) of 0.2 to $3{\mu}s$. It was observed that the peak value of transported space charge has been shown to be 21.5pC at $1.0{\mu}s$. And the IR peak value have been occured after $0.51{\mu}s$ with respect to sustain voltage.

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A Study on the Switching Characteristcs of PLT(10) Thin Films (PLT(10) 박막의 Switching 특성에 관한 연구)

  • Kang, Seong-Jun;Chang, Dong-Hoon;Yoon, Yung-Sup
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.11
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    • pp.63-70
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    • 1999
  • A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

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Electrochemical Reduction on the -S-N= Bond of N-Oxyldiethylenebenzothiazole-2-sulfenamide (N-Oxyldiethylenebenzothiazole-2-sulfenamide의 -S-N= 결합에 대한 전기화학적 환원)

  • Kim, Hae-Jin;Jung , Keun-Ho;Choi, Qw-Won;Kim, Il-Kwang;Leem, Sun-Young
    • Journal of the Korean Chemical Society
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    • v.35 no.6
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    • pp.680-688
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    • 1991
  • The electrochemical reduction of N-oxyldiethylenebenzothiazole-2-sulfenamide (ODBS; vulcanization accelerator) was investigated by direct current polarography, differential pulse polarography, cyclic voltammetry and controlled potential coulometry. The irreversible electrode reduction of ODBS proceeded E-C-E-C reaction mechanism by three electrons transfer with irreversible one wave (-1.86 volts vs. Ag/0.1 M AgN$O_3$ in AN). As the results of controlled potential electrolysis, mercaptobenzothiazole (MBT), benzothiazole disulfide (MBT dimer) and extricated sulfur were products which followed by cleavage of the sulfenamide (-S-N=) bond. Upo the basis of products analysis and polarogram interpretation witli pH variable, electrochemical reaction mechanism was suggested.

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Prevalence and Genetic Characterization of mcr-1-Positive Escherichia coli Isolated from Retail Meats in South Korea

  • Kim, Seokhwan;Kim, Hansol;Kang, Hai-Seong;Kim, Yonghoon;Kim, Migyeong;Kwak, Hyosun;Ryu, Sangryeol
    • Journal of Microbiology and Biotechnology
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    • v.30 no.12
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    • pp.1862-1869
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    • 2020
  • The spread of plasmid-mediated colistin resistance has posed a serious threat to public health owing to its effects on the emergence of pandrug-resistant bacteria. In this study, we investigated the prevalence and characteristics of mcr-1-positive Escherichia coli isolated from retail meat samples in Korea. In total, 1,205 E. coli strains were isolated from 3,234 retail meat samples in Korea. All E. coli strains were subjected to antimicrobial susceptibility testing and were examined for the presence of mcr-1 gene. All mcr-1-positive E. coli (n = 10, 0.8%) from retail meat were subjected to pulse-field gel electrophoresis (PFGE) and whole-genome sequencing (WGS). The transferability of mcr-1 gene was determined by conjugation assays. The mcr-1-positive strains exhibited diverse clonal types. Our mcr-1 genes were located in plasmids belonged to the IncI2 (n = 1) and IncX4 (n = 8) types, which were reported to be prevalent in Asia and worldwide, respectively. Most mcr-1 genes from mcr-1-positive strains (9/10) were transferable to the recipient strain and the transfer frequencies ranged from 2.4 × 10-3 to 9.8 × 10-6. Our data suggest that the specific types of plasmid may play an important role in spreading plasmid-mediated colistin resistance in Korea. Furthermore, our findings suggest that the retail meat may be an important tool for disseminating plasmid-mediated colistin resistance.

Nonthermal Sterilization of Pathogenic Escherichia coli by Intense Pulsed Light Using a Batch System (회분식 광펄스 처리에 의한 병원성 대장균의 비가열 살균)

  • Kim, Ae-Jin;Shin, Jung-Kue
    • Korean Journal of Food Science and Technology
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    • v.47 no.1
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    • pp.81-86
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    • 2015
  • Intense pulsed light (IPL), a nonthermal technology, has attracted increasing interest as a food processing technology. However, its efficacy in inactivating microorganisms has not been evaluated thoroughly. In this study, we investigated the influence of IPL treatment on the inactivation of Escherichia coli O157:H7 depending on light intensity, treatment time, and pulse number. Increased light intensity from 500 V to 1,000 V, raised the inactivation rate at room temperature. At 1000 V, the cell numbers were reduced by 7.1 log cycles within 120 s. In addition, increased pulse number or decreased distance between the light source and sample surface also led to an increase in the inactivation rate. IPL exposure caused a significant increase in the absorption at 260 nm of the suspending agent used in our experiments. This indicates that IPL-treated cells were damaged, consequently releasing intracellular materials. The growth of IPL-irradiated cells were delayed by about 5 h. The degree of damage to the cells after IPL treatment was confimed by transmission electron microscopy.

The rapid thermal annealing effects and its application to electron devices of Sol-Gel derived ferroelectric PZT thin films (졸-겔법으로 형성한 강유전체 PZT박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용)

  • 김광호
    • Electrical & Electronic Materials
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    • v.7 no.2
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    • pp.152-156
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    • 1994
  • The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

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Primary Radiation Force to Ultrasound Contrast Agents in Propagating and Standing Acoustic Field

  • Seo, Jong-Bum
    • The Journal of the Acoustical Society of Korea
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    • v.28 no.1E
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    • pp.1-8
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    • 2009
  • Primary radiation force on ultrasound contrast agents (UCA) in a propagating and standing acoustic field was explored. A specific ultrasound contrast agent $Albunex^{(R)}$ and $Optison^{(R)}$ were chosen for simulation. The model was developed based on a shelled bubble model proposed by Church. The numerical simulation suggests that bubble translational motion is more significant in therapeutic ultrasound due to higher intensity and long pulse duration. Even a single cycle of a propagating wave of 4 MPa at 1 MHz can cause a bubble translational motion of greater than $1{\mu}m$ which is approximately one tenth of capillary. Hence, UCA characteristics can be significantly changed in therapeutic ultrasound without rapid bubble collapses.

Characteristics of Ag-added Ge2Sb2Te5 Thin Films and the Rapid Crystallization (Ag-첨가 Ge2Sb2Te5 박막의 물성 및 고속 결정화)

  • Kim, Sung-Won;Song, Ki-Ho;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.7
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    • pp.629-637
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    • 2008
  • We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

Properties of $CaO-P_2O_5-SiO_2$ Glasses ($CaO-P_2O_5-SiO_2$계 유리의 물성)

  • 조정식;김철영
    • Journal of the Korean Ceramic Society
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    • v.30 no.4
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    • pp.289-298
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    • 1993
  • Properties in terms of the variation of the glass compositions, which were density (p), molar volume(Vm), atom/ion packing density (Dp), refractive index (nD), transformation temperature (Tg), dilatometric softening point (Td), thermal expansion coefficient (α), Young's modulus (E), and knoop hardness (KHN) were investigated in CaO-SiO2 glasses and CaO-P2O5-SiO2 glasses containing less than 10mole% of P2O5. Those properties were measured by density measurement kit, Abbe refractometer, dilatometer, ultrasonic pulse echo equipment, and micro hardness tester. When CaO content was increased in CaO-SiO2 glasses, p, Dp, nD, Tg, Td, α, E and KHN were increased, while Vm was decreased. When P2O5 was added to the CaO-SiO2 glasses with constant CaO/SiO2 ratio as 1.07, p, Dp, nD, Tg, Td, α, E and KHN were decreased, while Vm was increased. When the amount of P2O5 in glasses was kept constant, the changes of the properties with variation of CaO content in the CaO-P2O5-SiO2 glasses were very similar to those of CaO-SiO2 glasses. These phenomena could be explained by the structural role of P2O5 in the CaO-P2O5-SiO2 glasses, which was polymerization of siicate structures and resulted in [PO4] monomer structure in glasses. Due to this structural characteristics, the bond strength and packing density were changed with compositions. Proportional relationships between 1) np and Dp, 2) Tg, Td, α and CaO content, 3) E and Vm-1, and 4) KHN and P2O5 content were evaluated in this investigation.

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