• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.

• 한국진공학회지
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• 제12권2호
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• pp.112-117
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• 2003

MgO 박막은 PDP(plasma display panels)분야에서 널리 사용되어 왔다. 본 연구에서는, 기존에 사용되고 있는 e-beam evaporation, reactive magnetron sputtering법과 arc deposition법으로 MgO 보호막을 증착하여 구조적 · 광학적 특성을 비교하였다. 반응 가스인 산소 가스의 유입량을 변화시켜 Mg metal target을 이용하여 vacuum arc deposition equipment 의해 유리 기판 위에 증착하였다. Ellipsometer를 이용하여 치밀도를 측정하고, MgO보호막의 마모율(erosion rate)를 측정하기 위해 가속 실험 방법을 도입, Ar+ 이온빔에 의한 erosion test를 시행하여 내마모성을 알아보았다. 또한, XPS와 UV test를 사용하여 MgO보호막의 광투과도에 미치는 수분의 영향을 조사한 결과, arc evaporation 법이 광투과도 90%이상을 유지하여 수분의 영향에 둔감한 것을 알 수 있었다. 한편, XRD와 AFM을 이용하여 MgO 박막의 구조와 표면 형상에 대해 조사하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.311-312
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• 2006

We studied homeotropic alignment effect for a nematic liquid crystal (NLC) on the $SiO_x$, thin film irradiated by the new ion beam method $SiO_x$ thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) and were treated by the DuoPIGatron ion source. A uniform liquid crystal alignment effect was achieved over 2100 eV ion beam energy. Tilt angle were about $90^{\circ}$ and were not affected by various ion beam energy.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.120-120
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• 1996

• 한국재료학회지
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• 제23권3호
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• pp.194-198
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• 2013

In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a $1mm{\times}1mm$ vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.138.1-138.1
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• 2013

We present the low temperature (${\leq}1,000^{\circ}C$) vacuum sublimation behavior of an e-beam evaporative deposited on a SiC film and a method to reduce the vacuum sublimation through an ion beam process. The density of the SiC film deposited using the e-beam evaporation method was ~60% of the density of the bulk source material. We found that the sublimation became appreciable above ${\sim}750^{\circ}C$ under $1.5{\times}10^{-5}$ torr pressure and the sublimation rate increased with an increase in temperature, reaching ~70 nm/h at $950^{\circ}C$ when the coated sample was heated for 5 h. When the film was irradiated with 70 keV N+ ions prior to heating, the sublimation rate decreased to ~23 nm/h at a fluence of $1{\times}10^{17}\;ions/cm^2$. However, a further increase in fluence beyond this value or an extended heating period did not change (decrease or increase) the sublimation rate any further.

• 한국진공학회지
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• 제16권5호
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• pp.338-342
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• 2007

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 본 실험에서는 산소 이온 빔을 이용하여 증착된 MgO 보호막의 특성을 조사하였다. MgO 증착 시 보조 산소 이온 빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 발광특성에 미치는 영향을 분석하였다. 본 연구에서는 산소 이온 에너지가 300 eV 일 때 소자의 방전개시전압이 가장 낮게 나타났고, 발광 휘도 및 발광 효율은 가장 높게 나타났다. 또한 산소 이온 빔의 조사에너지에 따라 MgO 박막의 결정성 및 표면조도가 크게 영향을 받는 것을 확인할 수 있었다. 산소 이온 빔 보조 증착 방법을 이용하여 패널의 발광 휘도와 발광 효율 등 발광특성을 개선하였다.

• 대한금속재료학회지
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• 제46권7호
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• pp.458-463
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• 2008

High purity Fe thin films were prepared by the ion beam deposition method with $^{56}Fe^{+}$ions on the Si substrate at the room temperature. The Fe thin films were deposited at the ion energy of 50 eV and 100 eV. Microstructural properties were investigated on the atomic scale using high-resolution transmission electron microscopy (HRTEM). It was found that the Fe thin film obtained with the energy of 50 eV having an excellent corrosion resistance consists of the amorphous layer of ~15 nm in thickness and the bcc crystalline layer of about 30 nm in grain size, while the thin film obtained with the energy of 100 eV having a poor corrosion resistance consists of little amorphous layer and the defective crystalline layer. Furthermore the crystal structures and arrangements of the oxide layers formed on the Fe thin films were analyzed by processing of the HRTEM images. It was concluded that the corrosion behavior of Fe thin films relates to the surface morphology and the crystalline structure as well as the degree of purification.

• 한국광학회지
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• 제5권3호
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• pp.386-393
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• 1994

XeCl 엑시머 레이저를 횡방향의 전자빔으로 여기하여 이의 출력특성을 조사하였다. 전자빔의 출력은 880kV, 21kA(70ns, FWHM)이며 전자빔의 전류밀도는 다이오드(A-K) 간격과 공진기 외부에 설치한 펄스자계코일(4.7kG)로 제어하였다. 레이저 매질에 주입되는 전자빔의 축적에너지는 35J(4기압)이다. 축적에너지는 Radcolor film의 감광면적과 압력상승법에 의해 측정한 가스매질의 상승압력으로부터 환산된 수치이며, 이 때의 여기체적은 $320cm^{3}$이었다. 레이저 가스의 혼합비율은 HCl/Xe/Ar=0.2/6.3/93.5%이고 총압력이 3기압일 때, 최대효율 1.7%를 얻었다. 이 때의 출력에너지, 특성에너지는 각각 0.52J, 1.7J/l이었다. 실험결과의 분석을 위해 컴퓨터 시뮬레이션코드를 완성하였다. 시뮬레이션 결과는 실험결과와 잘 부합하고 있음을 확인하였고 그 결과를 이용하여 XeCl의 형성채널, 완화채널, 308nm의 흡수채널을 이론적으로 설명하였다.