• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.368-376
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• 1999

This paper predicts the changes in the spring constant, the resonant frequency, the electrostatic force, and the displacement of a resonant structure due to non-ideal anisotropic RIE etching process. First, a $6\;{\mu}m$ thick polysilicon was etched by RIE and the anisotropy of the etched structure was measured as a function of a RF power, a $Cl_2$ flow rate and a chamber pressure. In the experimental results, an anisotropy was decreased as the RF power, the $Cl_2$ flow rate, or the chamber pressure was increased. A comb actuator's operation characteristic was predicted depending on the anisotropy variations in RIE etching. Comb actuators with three different support beam structures were investigated : fixed-fixed, crab-leg, and double crab-leg. As the RIE etch anisotropy becomes non-ideal, i.e. the cross section becomes rather a trapezoidal than a rectangular shape, it decreases spring constant, resonant frequency and electrostatic force of a comb actuator but it increases the displacement of the mass. Among the three structures, the comb actuator with double crab-leg support beams is more influenced by anisotropy variation in RIE etch than other two.

• Journal of Korean Society of Steel Construction
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• v.23 no.2
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• pp.199-210
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• 2011

The cables in cable-stayed bridges are under high stress and are very sensitive to vibration due to their small section areas compared with other members. Therefore, it is reasonable to evaluate the cable impact factor by taking into account the dynamic effect due to moving-vehicle motion. In this study, the cable impact factors were evaluated via moving-vehicle-load analysis, considering the design parameters, i.e., vehicle weight, cable model, road surface roughness, vehicle speed, longitudinal distance between vehicles. For this purpose, two steel composite cable-stayed bridges with 230- and 540-m main spans were selected. The results of the analysis were then compared with those of the influence line method that is currently being used in design practice. The road surface roughness was randomly generated based on ISO 8608, and the convergence of impact factors according to the number of generated road surfaces was evaluated to improve the reliability of the results. A9-d.o.f. tractor-trailer vehicle was used, and the vehicle motion was derived from Lagrange's equation. 3D finite element models for the selected cable-stayed bridges were constructed with truss elements having equivalent moduli for the cables, and with beam elements for the girders and the pylons. The direct integration method was used for the analysis of the bridge-vehicle interaction, and the analysis was conducted iteratively until the displacement error rate of the bridge was within the specified tolerance. It was acknowledged that the influence line method, which cannot consider the dynamic effect due to moving-vehicle motion, could underestimate the impact factors of the end-cables at the side spans, unlike moving-vehicle-load analysis.

• The Journal of Korean Physical Therapy
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• v.19 no.4
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• pp.15-24
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• 2007

Purpose: This study was designed to investigate the effects of treadmill exercise on functional recovery after rat with experimental SCI. Methods: SCI was induced by the NYU-spinal cord impactor(NYU, USA) dropped a weight of 10 gm after laminectomy. Experimental groups were divided into the Group I (normal), Group II (control) and Group III(treadmill exercise). After 2 days of the operation, 24 rats(group II, III) were trained to walk on treadmill for 21 days twice/day, 15 min/session. After operation, rats were tested at modified Tarlov scale at 1, 2, 3, 4 days with divided into 2 groups, and Motor behavior test(BBB locomotor rating scale, Grid walking test, Narrow beam crossing test, Modified inclined plane test) was examined at 1, 3, 7, 14 and 21 days. Histopathological study were performed at 1. 3, 7, 14 and 21 days by H&E, Luxol Fast Blue staining were same times. Results: After SCI an improvement of motor behavior was shown group II, III. The motor behavior test of group Ill showed considerable improvement until 14 days. Conclusion: These results suggest that treadmill exercise treatment can playa role in facilitating recovery of locomotion following spinal cord injury.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Food Engineering Progress
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• v.14 no.1
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• pp.49-53
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• 2010

Surface plasmon resonance (SPR) which is utilized in thin film refractometry-based sensors has been concerned on measurement of physical, chemical and biological quantities because of its high sensitivity and label-free feature. In this paper, an application of SPR to detection of alcohol content in wine and liquor was investigated. The result showed that SPR sensor had high potential to evaluate alcohol content. Nevertheless, food industry may need SPR sensor with higher sensitivity. Herein, we introduced a nano-technique into fabrication of SPR chip to enhance SPR sensitivity. Using Langmuir-Blodgett (LB) method, gold film with nano-structured surface was devised. In order to make a new SPR chip, firstly, a single layer of nano-scaled silica particles adhered to plain surface of gold film. Thereafter, gold was deposited on the template by an e-beam evaporator. Finally, the nano-structured surface with basin-like shape was obtained after removing the silica particles by sonication. In this study, two types of silica particles, or 130 nm and 300 nm, were used as template beads and sensitivity of the new SPR chip was tested with ethanol solution, respectively. Applying the new developed SPR sensor to a model food of alcoholic beverage, the sensitivity showed improvement of 95% over the conventional one.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.2
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• pp.103-108
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• 2019

Non-equilibrium molecular dynamics simulation on the thermal boundary resistance(TBR) of an aluminum(Al)/silicon(Si) interface was performed in the present study. The constant heat flux across the Si/Al interface was simulated by adding the kinetic energy in hot Si region and removing the same amount of the energy from the cold Al region. The TBR estimated from the sharp temperature drop at the interface was independent of heat flux and equal to $5.13{\pm}0.17K{\cdot}m^2/GW$ at 300K. The simulation result was experimentally confirmed by the time-domain thermoreflectance technique. A 90nm thick Al film was deposited on a Si(100) wafer using an e-beam evaporator and the TBR on the film/substrate interface was measured using the time-domain thermoreflectance technique based on a femtosecond laser system. A numerical solution of the transient heat conduction equation was obtained using the finite difference method to estimate the TBR value. Experimental results were compared to the prediction and discussions on the nanoscale thermal transport phenomena were made.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.10-15
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• 2020

Ultraviolet rays, which have wavelengths smaller than 400 nm, are very harmful to the eyes. Recently, high-energy visible light was also revealed to be harmful to retinal cells. Therefore, polymer eyeglass lenses that can block UV and high-energy visible light are needed for eye health. In this study, high-refractive-index polymer eyeglass lens, n=1.67, were manufactured using the injection-mold method with the m-xylene diisocyanate monomer, 2,3-bis((2-mercaptoethyl)thio)-1-propanethiol monomer, benzotriazole UV absorber, release of alkyl phosphoric ester, dye mixture of CI solvent violet 13, and catalyst of dibutyltin dichloride mixture. A multi-layer anti-reflection coating was applied to manufactured polymer eyeglass lenses for both sides using an E-beam evaporation system. The optical properties of the manufactured lenses with the UV and high-energy visible light-blocking function were analyzed by UV-visible spectrophotometry. As a result, the polymer eyeglass lens with a UV absorber of 0.5 wt. % blocked 99% of UV and high-energy visible light shorter than 411 nm. The average transmittance of the polymer eyeglass lens with a UV absorber of 0.5wt.% was 97.9% in the range of 460 ~ 660 nm for photopic eye sensitivity higher than 10%. Therefore, clear image acquisition in photopic vision is possible.