• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.93-96
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• 2000

In this study, we investigated the electromagnetic properties of Mn-Zn ferrite doped with rare earth oxide (Dy$_2$O$_3$, Er$_2$O$_3$). The main composition is 52mo1% $\alpha$-Fe$_2$O$_3$, 25mo1% Mn$_3$O$_4$23mo1% ZnO and doped with them(0.05wt%~0.25wt%, step:0.05wt%). An experimental process has advanced by conventional ferrimagnetism manufacturing that was prepared by standard ceramic techniques. The XRD pattern of all doped sample were observed spinel and secondary phase. The density of sample were measured nearly constant value. As increased the additive, resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. In case of Mn-Zn ferrite excess doped with them, resistivity, initial permeability and real component of the series complex permeability decreased and magnetic loss increased in proportion to increasing the additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.93-96
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• 2000

In this study, we investigated the electromagnetic properties of Mn-Zn ferrite doped with rare earth oxide (Dy$_2$O$_3$, Er$_2$O$_3$). The main composition is 52mo1% ${\alpha}$-Fe$_2$O$_3$, 25mol% Mn$_3$O$_4$ 23mo1% ZnO and doped with them(0.05wt% ∼ 0.25wt%, step:0.05wt%). An experimental process has advanced by conventional ferrimagnetism manufacturing that was prepared by standard ceramic techniques. The XRD pattern of all doped sample were observed spinel and secondary phase. The density of sample were measured nearly constant value. As increased the additive, resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. In case of Mn-Zn ferrite excess doped with them, resistivity, initial permeability and real component of the series complex permeability decreased and magnetic loss increased in proportion to increasing the additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.33-36
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• 1998

BST(66/34) and BSCT(60/30/10) ceramics were prepared by mixed oxide method and studied about the microstructural and dielectric properties with $Y_2$O$_3$, Dy$_2$O$_3$, La$_2$O$_3$, MnCO$_3$. The grain size of undoped BST was 20~30 ${\mu}{\textrm}{m}$, but that of BST, doped content of MnCO$_3$ was 0.1 mol%, was decreased with increasing the contents of $Y_2$O$_3$. As the content of $Y_2$O$_3$ was Increased, Tc was shifted to lower temperature and dielectric constant at Tc was decreased. The dielectric constant of doped BSCT(60/30/10) ceramics ( 0.9 mol% $Y_2$O$_3$. and 0.1 mol% MnCO$_3$) was about 8, 000 at Tc( 22$^{\circ}C$ ).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.419-422
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• 2001

The electrical properties of Pr$_{6}$O$_{11}$-based ZnO varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$- based ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. As CoO content is increased, the average grain size and the density were increased in the range of 9.86~27.22 $\mu$m and in the range of 5.25-5.55 g/cm$^3$, respectively. The varistor voltage was decreased in the range of 235.32~86.01 V/mm due to the increase of average grain size with CoO content. The varistors doped with CoO in the rage of 1.0~2.0 mol% exhibited a high nonlinearity, in which is above 55 in the nonlinear exponent and below 1.5 $\mu$A in the leakage current. Increasing CoO content further greatly decreased the nonlinearity.ity.ity.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.803-809
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were characterized and measured in this study. The basic composition of the BaTiO3 cremics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Samples of the BaTiO3 ceramics were prepared by adding various amounts of the TiO2, SiO2 and Al2O3 to the basic composition. An addition of 1 mol% TiO2, 2 mol% SiO2 and 0.5 mol% Al2O3 to the basic composition resulted both the values of the room temperature resistivity and the temperatured coefficient being maxium. Meanwhile, an addition of 1 mol% TiO2 and 1 mol% Al2O3 to the basic composition resulted the value of the room temperature resistivity maxium and the temperature coefficient minimum. The temperature coefficient showed a maximum value as well as a minimum value when the three kinds of the additives were added together to the basic composition of the BaTiO3 ceramics. Maxed phases of BaTi3O7, BaTiSiO5 and BaAl2Si2O8 were present at the grain boundary.

• Asian Journal of Turfgrass Science
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• v.10 no.1
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• pp.41-47
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• 1996

The theory of slope erosion is developed along similar lines to the theory of heat flow in solid added to the correcting factor. if slope erosion in the forest and grassland proceeds according to the hypothesis, it is $\delta$y $\delta^2$y = k $\delta^2$y $\delta$$X^2$+f(s b. t) where 5 is internal properties of slope soil and b is biota on slope. When the variables of the equation of slope erosion are x = -λ the initial elevation=-f(λ), x=λ, x==a, the steady value of the initial elevation=y, and dy dx x=0> =O(t>o), respectively, the houndary condition due to the solution of the equation of slope erosion is y= 2 √$\pi$kt [∫a o λe $(X-λ)^2$4kt dλ- ∫ao- $(x+λ)^2$4kt dλ] + ∫∫∫ f (s.b. t)dtdbds

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.467-471
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• 2001

DC accelerated aging characteristics of $Pr_{6}O_{11}$-based ZnO varistors, which are composed of $ZnO+Pr_{6}O_{11}+CoO+Cr_{2}O_{3}+Dy_{2}O_{3}$ ceramics were investigated with CoO content in the range of 0.5 - 5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and +288.79%, respectively, under DC accelerated aging stress, such as $(0.85V_{lmA}/115^{\circ}C/24h)+(0.90V_{lmA}120^{\circ}C/24h)+(0.95V_{lmA}/125^{\circ}C/24h)+(0.95V_{lmA}/150^{\circ}C/24h)$. Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.467-471
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• 2001

DC accelerated aging characteristics of Pr$_{6}$O$_{11}$-based ZnO varistors, which are composed of ZnO+Pr$_{6}$O$_{11}$+CoO+Cr$_2$O$_3$+Dy$_2$O$_3$ ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and 288.79%, respectively, under DC accelerated aging stress, such as (0.85 V$_{1mA}$/115$^{\circ}C$/24h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/24h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/24h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/24h). Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability,ity,ability,ity,

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.185-185
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• 2003

백색 LED를 실현하는 방법의 하나로 UV LED와 적, 녹, 청의 3색 형광체를 이용하는 방법이 주목받고 있다. 이것은 연색성과 색온도 제어 특성이 뛰어나다. 그러나 기존의 형광체는 단파장, 약 250nm 전후, 에서 여기되는 특성을 갖고 있기 때문에 near UV(nUV), 약 380-410nm, 의 LED에 응용하기에는 발광특성에 문제점을 갖고 있다. 본 연구에서는 nUV 여기가 가능한 strontium aluminate를 flux를 이용한 고상반응법으로 합성하고 발광 특성을 분석하였다. SrO와 A1$_2$ $O_3$의 조합비와 반응조건에 따라서 SrA1$_2$ $O_4$ 흑은 Sr$_4$Al$_{14}$ $O_{25}$ 가 합성되었고, 이들은 도핑과 함께 각각 약 520nm에서의 녹색발광과 약 480nm에서의 청녹색 발광 특성을 보이고 있었다. 도펀트로는 Eu, Dy, Ce, Pr 등이 단독 혹은 혼합되어 첨가되었고, 종류와 양에 따라서 발광 파장의 이동이 관찰 되었고, 강도도 이것에 크게 의존하고 있었다. 또한 발광강도는 여기 파장에도 의존하고 있었으며, 약 350-390nm의 nUV에서 가장 높은 발광강도가 관찰되었다.다.