• Electrical & Electronic Materials
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• v.10 no.1
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

• Composites Research
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• v.22 no.3
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• pp.82-88
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• 2009

The effect of open and filled holes on the strength behavior of carbon fiber reinforced polymeric (CFRP) composites was investigated. The strength was measured at room temperature dry, cold temperature dry, $-55^{\circ}C$, and elevated temperature wet, $108.3^{\circ}C$ on several different laminate configurations. Based on the experimental data presented, it is shown that the filled hole tensile strength is larger than that of open hole by reducing damage around the hole due to the constraint imposed by the fastener. The tensile strength at cold temperature dry, $-55^{\circ}C$ is increased with the brittleness by the thermal expansion coefficient of fiber and matrix. The compressive strength at elevated temperature wet, $108.3^{\circ}C$ is decreased by the cause of interfacial deterioration between fiber and matrix with moisture absorption.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.42 no.2
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• pp.197-208
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• 2022

The existence of shallow bedrock and the desire to use underground space necessitate the use of blasting methods. The standard blasting method under water after drilling is associated with certain technical difficulties, including reduced detonation power, the use of a fixed charge per delay, and decoupling. However, there is no blasting method to replace the existing blasting method. In this paper, a dry hole charged with ANFO blasting is assessed while employing a dry hole pumping system to remove water from the drill borehole. Additional standard blasting is also utilized to compare the blasting performances of the two methods. The least-squares linear regression method is adopted to analyze the blasting vibration velocity quantitatively using the measured vibration velocity for each blasting method and the vibration velocity model as a function of the scaled distance. The results show that the dry hole charged with ANFO blasting will lead to greater damping of the blasting vibration, more energy dissipation to crush the surrounding rock, and closer distances for the allowable velocity of the blasting vibration. Also, standard blasting shows much longer influencing distances and a wider range of the blasting pattern. The pilot test confirms the blasting efficiency of dry hole charged with ANFO blasting.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.4
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• pp.29-36
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• 2004

An experimental study on drilling of stainless steel is conducted using TiAlN coated drills and HSS twist drills with several cutting conditions; feed rate, spindle rotational speed, and dry/wet cutting. The effects of number of hole on the thrust force are examined by cutting force measurement. The flank wear of the drills and the change of hole diameter are quantitatively observed using a vision system. It is found that the thrust force in drilling with TiAlN coated drills decrease under dry and wet machining, whereas the flank wear resistance is improved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.459-460
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• 2011

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.934-937
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• 1999

MMIC 제작을 위한 단일 반도체 공정으로써 PECVD를 이용한 Si₃N₄의 증착, RIE를 이용한 CaAs via-hole건식식각, 그리고 airbridge 공정조건을 위한 실험 및 분석 작업을 수행하였다. Si₃N₄의 증착 실험에서는 굴절률이 2인 조건을, GaAs via-hole 식각 실험에서는 최적화된 thru-via의 모양과 식각률을 갖는 조건을, airbridge 실험에서는 polyimide coating 및 건식 식각 조건과 금 도금 및 습식 식각의 최적 조건들을 찾아내었다.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.2 s.120
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• pp.1-8
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• 2007

To examine the feasibility of dry forming technology for papermaking, a dry forming mold (DFM) was developed and evaluated. Main fanning section of DFM was a cylindrical tube, and at the top of the mold a stirring equipment was placed to disperse dry fibers. These fibers were screened using a hole type screen plate placed just under the stirring equipment and dropped freely on the fanning wire located 0.9 m below of the screen plate to form a dry fiber pad. The vertical and horizontal velocity of air flow in the forming cylinder were evaluated and analyzed to find the most effective method of air flow control in the cylinder. Humidification and pressing conditions to obtain a decent dry fanned papers were examined. Results showed dry fanned papers can be prepared with this dry forming mold. And this mold can be used to examine the effect of the papermaking process factors including pressing pressure, drying temperature, humidification on sheet quality of dry formed papers.

• Journal of the Korean Society of Tobacco Science
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• v.3 no.1
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• pp.58-65
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• 1981

This study was carried out to investigate the influence of distance of planting holes (51, 45, and 40 cm) and number of plants per a hole(4, 5, 6 plants) on agronomic characteristics, yield, and quality of an aromatic tobacco, Sohyang. The results are as follows: 1. Relative light intensity increased by widening the distance of holes. 2. Leaf area per a plant or per a leaf, and leaf length and width increased by widening the distance of holes and decreased by increasing the number of plants per a hole. But L. A. 1. increased by increasing the number of plants per a hole. Leaf shape index (Leaf length/Leaf width) showed little differences among treatments. 3. Dry weight of leaf, root, and stem per a plant decreased by increasing the number of plants per a hole. 4. Total nitrogen decreased by increasing number of plants per a hole and in the case of narrow distance of holes, but nicotine, reducing sugar, ether-extract and ash showed little differences. 5. Yield per 10a decreased by widening the distance of holes. 6. Quality(price per kg) was improved by increasing the number of plants per a hole at the Plot of 51m distance of holes. But there was no variation at the Plot of 45cm. And quality was decreased at the plot of 40cm distance of holes by increasing the number of Plants per a hole. 7. Price per 10a was highest in the plot of which plant spacing was $90\times$40cm and the number of plants per a hole was 4 (11112 plant/10a).