• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1466-1468
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• 1996

The standards of the capacitance arc measured and analyzed by the dry nitrogen or mica film as a dielectric. In this paper, respectively the standard capacitors of 10 pF and 100 pF for the establishment of the dielectric loss tangent are made by $Al_{2}O_{3}$ crystal disc with the low dielectric loss tangent, and then measured the dielectric loss tangent with precision. To regard for the existence of capacitances just in the dielectric, 3-terminal configuration electrode is used. With using the 2D electric field simulator, precise design values are derived in addition to stray capacitance. As stated above method, respectively the standards of the capacitances with 10 pF and 100 pF arc made with the low dielectric loss tangent less than $10^{-4}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.33 no.3
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• pp.194-201
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• 1997

Recently with the rapid development in the industries such as an iron mill and chemical plants, these are enlarged by the use of the piping. This piping was encountered the stress corrosion cracking(SCC) because of stress by water pressure and residual stress of welding etc. under industrial water. In this paper, the behaviour of stress corrosion cracking on the weld zone of steel pipe piping water(SPPW) were investigated according to pre-heat before welding in natural seawater(specific resistance : 25$\Omega$-cm). The main results obtained are as follows :1) The stress corrosion cracking for SPPW and SB 41 is most ready to propagate in heat affected zone of weldment. 2) The SCC sensitivity of SPPW on weldment is more susceptible than that of SB 41. 3) The stress corrosion cracking growth of heat affected zone is delayed by the preheat and dry of base metal and electrode before welding.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.291-292
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• 2008

We fabricated 40Gbps electroabsorption modulator-integrated DFB lasers (EMLs). Adopting traveling-wave (TW) electrode and tilted facet improved high-frequency characteristics of EMLs. The 3dB bandwidth of E/O response for TW-EML was as large as 34 GHz, as compared with 27 GHz for lumped EML. Tilted facet formed by dry etching processes successfully reduced the optical feedback and the resonance in E/O response decreased to as small as 2.8 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.131-134
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma po1ymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV]. ranging the dose of 1∼500[${\mu}$C/$\textrm{cm}^2$], the pattern was developed with dry tree and formed by plasma etching. By analysing of the molecule structure using FT-lR, it was confirmed that the thin films of PPMST contains the functional radicals of the MST monomer. The thin films of PPMST had a highly crosslinked structure resulting in a higher molecule weight than the conventional resist.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.113-118
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• 2002

We developed engineering methods to control gas flow in a plasma reactor in order to achieve good etch depth uniformity for large area GaAs etching. Finite difference numerical method was found quite useful for simulation of gas flow distribution in the reactor for dry etching of GaAs. The experimental results in $BCl_3/N_2/SF_6/He$ ICP plasmas confirmed that the simulated data fitted very well with real data. It is noticed that a focus ring could help improve both gas flow and etch uniformity for 150 mm diameter GaAs plasma etch processing. The simulation results showed that optimization of clamp configuration could decrease gas flow uniformity as low as $\pm$ 1.5% on an 100 mm(4 inch) GaAs wafer and $\pm$ 3% for a 150 m(6 inch) wafer with the fixed reactor and electrode, respectively. Comparison between simulated gas flow uniformity and real etch depth distribution data concluded that control of gas flow distribution in the chamber would be significantly important in order or achieve excellent dry etch uniformity of large area GaAs wafers.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.13-18
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• 2004

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.

• Korean Journal of Applied Biomechanics
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• v.18 no.1
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• pp.39-43
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• 2008

The purpose of this study was to develop EOG system for collecting eye movement patterns to investigate visual function and position and the level of balancing. This small and partable wireless EOG system was enabled to collect stable signals without hindering any kind of sports movement. This system was consist of four parts: amplifier, main process with wireless transmitter, receiver, and display. Three EOG electrodes were used and placed on right(+), left(-) sides of eyes, and between eyes as a reference. This system was possible to measure signals for relatively long duration but the degeneration of electrodes may magnify measurement errors when collecting time was getting longer. Thus, dry electrodes may be applied to the system when long term measurement is needed for future studies.