• Title/Summary/Keyword: Dry deposition Plate

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Atmospheric Dry Deposition Characteristics of Nitrogen-containing Compounds into Juam Reservoir (주암호에 대한 질소화합물의 대기건식침적 특성)

  • Cheong Jang-Pyo;Jang Young-Hoan
    • Journal of Korean Society for Atmospheric Environment
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    • v.21 no.6
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    • pp.657-666
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    • 2005
  • The objectives of this study were to investigate atmospheric dry deposition of inorganic nitrogen-containing compounds to waterbody. Target waterbody is Juam reservoir functioning as one of the major water supply sources in Chollanamdo. Nitrate and ammonium dry deposition fluxes were directly measured using dry deposition plate (DDP) covered with greased strips and a water surface sampler (WSS). The daytime average $NO_{3}^{-}\;and\;NH_{4}^{+}$ fluxes measured with DDP and WSS were $1.7\∼2.6$ times higher than those at nighttime. The seasonal average flux of $NH_{4}^{+}$ showed the highest value in summer. The daytime and nighttime average dry deposition fluxes of particulate phase Nitogen-containing Compounds ($1.13,\;0.80\;mg/m^{2}$ day) were much higher than those of gas phase compounds ($0.50,\;0.24\;mg/m^{2}$ day).

Effect of Dry Deposition on Water Quality -The comparison of several methodologies for estimating dry deposition flux (수질에 대한 대기건식침적의 영향 - 건식침적량 추정 방법론의 비교를 중심으로)

  • Cheong, Jang-Pyo
    • Journal of Korean Society of Water and Wastewater
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    • v.22 no.1
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    • pp.159-168
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    • 2008
  • A special field experiment has been carried out from March 2001 to June 2001 at the Changhowon in Kyunggi to investigate a better methodology for the estimation of dry deposition of pollutions applicable in Korea. In this study, dry deposition plate was used to measure of total and water soluble acidic mass fluxes, and CPRI(Coarse Particle Rotary Impactor), CI(Cascade Impactor) were also used to measure ambient concentrations in various particle size ranges. Sehmel-Hodgson model was used to estimate dry depostion velocity and Weibull probability distribution function was applied to get generalized particle size distribution for the size fractioned concentration data sampled by CPRI and CI. Atmospheric dry deposition fluxes of mass and ionic matters estimated by the various techniques(one-step, multi-step, equi-concentration, subdivision for only the coarse particle range, applying Weibull distribution function, etc.) were compared to flux data sampled by DDP. It was found out that the deposition fluxes estimation methodology calculated by the each particle size range devided by particle size distribution characteristics and the rapidly changed points of deposition velocity using Weibull probability distribution function was the most applicable.

Measurement of Atmospheric Dry Deposition and Size Distribution of Particulate PCBs in 1999 at Seoul

  • Park, Seong-Suk;Shin, Hye-Joung;Yi, Seung-Muk;Kim, Yong-Pyo
    • Journal of Korean Society for Atmospheric Environment
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    • v.22 no.E1
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    • pp.35-43
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    • 2006
  • Ambient particle size distributions of PCBs and their dry deposition fluxes were measured at a site in Seoul to quantify dry deposition fluxes of PCBs and size characteristics of PCBs in the air, and to estimate ambient concentrations of gaseous PCBs and dry deposition fluxes. The dry deposition plate was used to measure dry deposition fluxes of particulate mass and PCBs and a cascade impactor and rotary impactor were used to measure ambient particle size distributions for small ($D_p<9{\mu}m$) and large ($D_p>9{\mu}m$) particles, respectively. Six sample sets were collected from April to July 1999. The fluxes of particulate total PCBs (the sum of 43 congeners) ranged from 160 to $607ng\;m^{-2}day^{-1}$. The size distribution of total PCBs was bimodal with two peaks in small particle size ($D_p{\sim}0.6\;and\;6{\mu}m$, respectively) and, thus, mass concentration being dominant in small particles. The mean particulate PCBs concentration was $6.9{\mu}g$ PCBs/g. The concentrations of PCB homologues in the gas phase were estimated based on the particle/gas partition coefficient ($K_p$) with the measured values of particulate PCBs in this study and they were comparable to those observed in other previous studies. Dry deposition fluxes were estimated by calculating dry deposition velocities.

Measurement of Dry Deposition of Polycyclic Aromatic Hydrocarbons in Jeoniu (전주지역에서 다환방향족 탄화수소의 건식 침적 측정)

  • Kim, Hyoung-Seop;Kim, Jong-Guk;Ghim, Young-Sung
    • Journal of Korean Society for Atmospheric Environment
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    • v.23 no.2
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    • pp.242-249
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    • 2007
  • Deposition fluxes of polycyclic aromatic hydrocarbons (PAHs) were measured at the Chonbuk National University located in Jeonju between June and November 2002. Fluxes of gaseous and particulate PAHs were separately obtained using a water surface sampler (WSS) and a dry deposition plate (DDP). Most of PAHs were deposited in the gaseous form since the low molecular weight PAHs dominates in the atmosphere. The deposition velocity of particulate PAHs was higher than that of gaseous PAHs when the molecular weight was low, but substantially decreased as the fine particle fraction increased with molecular weight. The deposition velocity was generally higher at high wind speeds. However, increase in the deposition velocity in unstable atmospheric conditions was also observed for gaseous PAHs of intermediate molecular weight.

STUDY ON ATMOSPHERIC BEHAVIOR OF POLYCYCLIC AROMATIC HYDROCARBONS IN URBAN AREA, JEONJU

  • Kim, Hyoung-Seop;Kim, Jong-Guk;Kim, Kyoung-Soo
    • Environmental Engineering Research
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    • v.12 no.3
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    • pp.118-127
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    • 2007
  • Between June and November 2002, the atmospheric concentrations and dry deposition fluxes of polycyclic aromatic hydrocarbons (PAHs) in Chonju were measured four times each over five days. The total concentration of PAHs in ambient air was $84\;ng/m^3$, with about 90% existing in the vapor phase. Plots of log ($K_p$) vs. log (${P_L}^0$) indicated that PAHs partitioning was not in equilibrium and the particulate characteristics did not change with seasonal variations. The PAHs fluxes to a water surface sampler (WSS) and a dry deposition plate (DDP) were about 14.15 and $1.92\;{\mu}g/m^2/d$, respectively. The flux of the gaseous phase, acquired by subtracting the DDP from the WSS results, was about $12.23\;{\mu}g/m^2/d$. A considerable correlation was shown between the atmospheric concentrations and deposition fluxes in the gaseous phase, but not in the particulate phase, as the fluxes of the particulate phase were dependent on the physical velocity differences of the particulates based on the particle diameter.

Reverse Characteristics of Field Plate Edge Terminated SiC Schottky Diode with $SiO_2$ formed Various Methods (산화막 형성 방법에 따른 전계판 구조 탄화규소 쇼트키 다이오드의 역전압 특성)

  • Bahng, W.;Cheong, H.J.;Kim, N.K.;Kim, S.C.;Seo, K.S.;Kim, H.W.;Cheong, K.Y.;Kim, E.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.409-412
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    • 2004
  • Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.

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A Review on Transfer Process of Two-dimensional Materials

  • Kim, Chan;Yoon, Min-Ah;Jang, Bongkyun;Kim, Jae-Hyun;Kim, Kwang-Seop
    • Tribology and Lubricants
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    • v.36 no.1
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    • pp.1-10
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    • 2020
  • Large-area two-dimensional (2D) materials synthesized by chemical vapor deposition on donor substrates are promising functional materials for conductors, semiconductors, and insulators in flexible and transparent devices. In most cases, 2D materials should be transferred from a donor substrate to a target substrate; however, 2D materials are prone to damage during the transfer process. The damages to 2D materials during transfer are caused by contamination, tearing, and chemical doping. For the commercialization of 2D materials, a damage-free, large-area, and productive transfer process is needed. However, a transfer process that meets all three requirements has yet to be developed. In this paper, we review the recent progress in the development of transfer processes for 2D materials, and discuss the principles, advantages, and limitations of each process. The future prospects of transfer processes are also discussed. To simplify the discussion, the transfer processes are classified into four categories: wet transfer, dry transfer, mechanical transfer, and electro-chemical transfer. Finally, the "roll-to-roll" and "roll-to-plate" dry transfer process is proposed as the most promising method for the commercialization of 2D materials. Moreover, for successful dry transfer of 2D materials, it is necessary to clearly understand the adhesion properties, viscoelastic behaviors, and mechanical deformation of the transfer film used as a medium in the transfer process.

A Study of Machining Optimization of Parts for Semiconductor Plasma Etcher (반도체 플라즈마 식각 장치의 부품 가공 연구)

  • Lee, Eun Young;Kim, Moon Ki
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.4
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    • pp.28-33
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    • 2020
  • Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

The development of ultra high-speed metal film deposition system and process technology for a heat sink in digital devices (디지털 소자용 방열판 제작을 위한 초고속 금속필름 증착장치 및 공정기술 개발)

  • Yoon, Hyo Eun;Ahn, Seong Joon;Han, Dong Hwan;Ahn, Seungjoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.7
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    • pp.17-25
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    • 2017
  • To resolve the problem of the temperature rise in LED or OLED lighting, until now a thick metal film has been used as a heat-sink. Conventionally, this thick metal film is made by the electroplating method and used as the heat-dissipating plate of the electronic devices. However, nowadays there is increasing need for a Cu metal film with a thickness of several hundred micrometers that can be formed by the dry deposition method. In this work, we designed and fabricated a Cu film deposition system where the heating element is separated from the ceramic crucible, which makes ultra-rapid deposition possible by preventing heat loss. In addition, the resulting induction heating also contributes to the high deposition rate. By tuning the various parameters, we obtained a $100-{\mu}m$ thick Cu film whose heat conductivity is high and whose thickness uniformity is better than 2%, while the deposition rate is as high as $1000{\AA}/s$.

Design and Fabrication of Movable Micro-Fersnel Lens on XY-stage (XY-Stage에 의해 정적인 변위를 갖는 미세 프레넬 렌즈(Micro-Fresnel Lens)의 설계 및 제작)

  • Kim, Che-Heung;Ahn, Si-Hong;Lim, Hyung-Taek;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 1998.07g
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    • pp.2515-2517
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    • 1998
  • The micro fresnel lens(MFL) was modeled and fabricated on a XY-stage electrostatically driven by comb actuator. The modeled MFL was approximated as a step shape with 4-phase and 4-zone plate. The focal length and diameter of the MFL is 20mm and 912${\mu}m$, respectively. The XY-stage suspending the MFL is designed to generate a large static displacement up to about 20${\mu}m$. On SOI substrates, we first fabricated MFL using the RIE(reactive Ion etching) technology and then patterned and etched bulk silicon to make XY-stage. After the fabrication of all structures on top side of the SOI substrates. $Si_3N_4$ was deposited for passivation of all structures using PECVD(plasma enhanced chemical vapor deposition). All the MFL systems width comb drive actuator were released by KOH etching from the bottom side of the SOI wafer using double-sided alignment technique. In fabrication of MFL, a dry etching conditions is established in order to improve surface roughness and to control the etched depth.

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