• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• Journal of Magnetics
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• v.18 no.2
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• pp.81-85
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• 2013

We investigate the electronic and magnetic properties in Cu-doped InN with the N vacancy ($V_N$) from first principles calculations. There is the long-range ferromagnetic order between two Cu atoms, attributed to the hole-mediated double exchange through the strong p-d interaction between the Cu atom and neighboring N atom. The system of $V_N$ defect in Cu-doped InN has the lowest formation energy. Due to the hybridization between the Cu-3d and $V_N$ states, the spin-polarization on the Cu atoms in the InN lattice is reduced by $V_N$ defect. So, it shows a weak ferromagnetic behavior.

• Korean Journal of Heritage: History & Science
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• v.49 no.4
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• pp.126-155
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• 2016

This article deals with some issues with respect to the Mahan pottery excavated from the tombs. Pedestal jars with cover, small round-bottom jars, cylindrical pottery etc. had appeared in the interaction with the northern region in the dimension of the southern Korean peninsula. Especially, these relics had an important role at the route connecting the midwest region, Chungcheong(忠淸) inland and Yeongnam(嶺南) region. By this stage, the iron culture was similar to each other in the southern Korean peninsula. In addition to the inland route, the coastal passage along the west coast seems to have been used. Such signs are found in cylindrical pottery and Pedestal jars with cover. It was probably a natural phenomenon that the most powerful forces of Mahan appeared at this crossroad of cultural exchange. The unique style of Mahan pottery such as double-rim pottery had been established since the third century. After the third century, Mahan pottery varied by region depending on the tomb style. The difference roughly matches with the variations of the tomb style. But at the region of Bungumyo(mounded tomb), specific pottery such double-rim pottery had been prevalent than in other regions. And a specific style had been used in a narrow range. The pottery spread to the neighboring regions in the course of interaction and were also used in ritual practices.

• Journal of Magnetics
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• v.20 no.4
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• pp.331-335
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• 2015

The ferromagnetic and electronic structure for the $Al_xGa_{1-x}P$ and Mn-doped $AlGaP_2$ was studied by using the self-consistent full-potential linear muffin-tin orbital method. The lattice parameters of un-doped $Al_xGa_{1-x}P$ (x = 0.25, 0.5, and 0.75) were optimized. The band-structure and the density of states of Mn-doped $AlGaP_2$ with or without the vacancy were investigated in detail. The P-3p states at the Fermi level dominate rather than the other states. Thus a strong interaction between the Mn-3d and P-3p states is formed. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the (Mn-3d)-(P-3p)-(Mn-3d) hybridization, which is attributed by the partially filled P-3p bands. The holes are mediated with keeping their 3d-characters, therefore the ferromagnetic state is stabilized by this double-exchange mechanism.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.236-240
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• 2005

The magnetocaloric effect and magnetization behaviors have been studied for $La_{1-x}Pb_{x}MnO_3$ (x=0.1, 0.2, 0.3) alloys. The Curie temperature increased from 195 K to 352 K with increasing Pb concentration. A large magnetic entropy change (${\Delta}S_M$), which is calculated from H vs M curves associated with the ferromagnetic-paramagnetic transitions, has been observed. The maximum ${\Delta}S_M$ of $La_{0.8}Pb_{0.2}MnO_3$ was 1.22 J/kg K at 294 K for an applied field of 1.5 T. Adiabatic temperature change (${\Delta}T_ad$) was measured directly by a special cryostat. The maximum ${\Delta}T_ad$ of $La_{0.7}Pb_{0.3}MnO_3$ was 1.00 K at 352 K for an applied field of 2 T.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.249-254
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• 2023

La_0.7-xCe_xSr_0.3MnO₃ specimens were fabricated by a solid state reaction method and structural and electrical properties with variation of Ce⁴⁺ contents were measured. All specimens exhibited a polycrystalline rhombohedral crystal structure, and the (110) peaks were shifted to low angle side with increasing the amount of Ce⁴⁺ contents. As Ce⁴⁺ ions with different ion radii and charges are substituted with La³⁺ ions, electrical properties are thought to be affected by changes in the double exchange interaction between Mn³⁺-Mn⁴⁺ ions due to distortion of the unit lattice, a decrease in oxygen vacancy concentration, and an increase in lattice defects. Resistivity gradually decrease as the amount of Ce⁴⁺ added increased, and negative temperature coefficient of resistance (NTCR) properties were shown in all specimens. In the La_0.5Ce_0.2Sr_0.3MnO₃ specimens, electrical resistivity, TCR and B-value were 31.8 Ω-cm, 0.55%/℃ and 605 K, respectively.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.38-44
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• 2004

The iron doped colossal magnetoresistance materials with La-Ba-Mn-O perovskites structure have been synthesized by chemical reaction of sol-gel methods. Their crystallographic and magnetic properties have been studied with x-ray diffraction, VSM, RBS, Mossbauer spectroscopy, and magnetoresistance measurements. The crystal structure of the La$\_$0.67/Ba$\_$0.33/Mn$\_$0.99/Fe$\_$0.01/ $O_3$ at room temperature was determined to be orthorhombic of Pnma. The lattice parameters a$\_$0/ and c$\_$0/ increased gradually, but b$\_$0/ deceased with increase of iron substitution. The magnetization and coercivity deceased, also the Curie temperature decreased from 360 K as x increased from 0.00 to 0.05. Magnetoresistence measurements were carried out, and the maximum MR ($\Delta$$\rho$/$\rho$(0)) was observed at 281 K, about 9.5 % in 10 kOe. The temperature of maximum resistance (R$\_$MAX/) decreased with increasing substitution of Fe ions and a semiconductor-metal transition temperature (T$\_$SC-M/) decreased too. This phenomena show that ferromagnetic transition temperature decreased by substituting Fe for Mn ions, it decreases double exchange interaction. This result accords with magnetic structure of neutron diffraction. Mossbauer spectra of La$\_$0.67/Ba$\_$0.33/Mn$\_$0.99/Fe$\_$0.01/ $O_3$were taken at various temperatures ranging from 15 to 350 K. With lowering temperature of the sample, two magnetic phases were increased and finally it showed the two sharp sextets of spectra at 15 K. The isomer shift at all temperature range is about 0.3 mm/s relative to Fe metal, which means that both Fe ions are Fe$\^$3+/ states.Fe$\^$3+/ states.

• Journal of Gifted/Talented Education
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• v.24 no.6
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• pp.1001-1024
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• 2014

The purpose of the study is to explore the experiences and meaning of the AP (Advanced Placement) at the specialized school for the highly gifted through the in-depth interview with 39 college students who had graduated from the specialized schools with the AP experiences. It is expected that the AP will be expanded to the students at the Science High Schools from the year of 2015, however, there has been no study to examine the realities of the AP in-depth especially through the voices of the AP participants. Students have taken 8 required and/or selective courses as AP in average. Students usually start to take AP from the second year of the specialized school for the highly gifted, but some start from the first year through the placement test. Numbers of available AP courses vary by subjects, but relatively more courses open in the areas of math and physics. Students' opinions regarding the AP were quite positive. Specifically, the high quality of the AP class and energetic interaction between student and teacher compared to the college classes were preferred by the students. However, it was controversial whether C+ is enough for the pass condition of the AP. Students were using the shortened time by AP in diverse ways, such as early graduation, double majors, exchange students, individual researches, and so on. Most of all, they tried to search for their career interests through the AP experiences. In closing, the present study provides some advices and future directions for the better AP management, including the improvement of administrative system between schools for the gifted and the universities, and the expansion of the number of university which approves the AP system.