• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.133-136
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• 2000

We investigated the improvement of viewing angle using a patterned double twisted (PDT) vertical-alignment (VA) cell mode on a homeotropic alignment layer. Good voltage-transmittance curves for negative dielectric anisotropic nematic liquid crystal (NLC) using the PDT-VA cell without a negative compensation film were obtained. The viewing angle of the PDT-VA cell without a negative compensation film was wider than that of a conventional VA cell.

• Journal of IKEEE
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• v.21 no.3
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• pp.219-226
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• 2017

This paper was studied the double-band monopole antenna design with Mu-negative metamaterial unit cell, which operates at 700MHz and 2.45GHz band. Mu-negative unit cell made of the interdigital capacitor structure to operate a double-band antenna by inserting it into an antenna radiator unit. In addition, the parasitic conductor is implemented on the back side of the antenna radiation part, so that the resonance point of the antenna can be controlled and the bandwidth is improved. Finally, we implemented an antenna operating in the 750MHz UHD band and the 2.45GHz WiFi band. The designed antenna has a size of $200{\times}100mm^2$. Experimental results show that the 8dB bandwidth and gain characteristics at 750MHz band are 320MHz(42.7%), 5.28dB, 6dB bandwidth and gain at 2.45GH are 540MHz (21.6%), -0.46dB. From the experimental results, we confirmed that the resonance point with theoretical value is in agreement with experimental value, and the radiation patterns are have the omnidirectional characteristic in both bands.

• Atmosphere
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• v.17 no.3
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• pp.231-240
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• 2007

The flow regimes of continuously stratified flow over a double mountain and the effects of a double mountain on wave breaking, upstream blocking, and severe downslope windstorms are investigated using a mesoscale numerical model (ARPS). According to the occurrence or non-occurrence of wave breaking and upstream blocking, three different flow regimes are identified over a double mountain. Higher critical Froude numbers are required for wave breaking and upstream blocking initiation for a double mountain than for an isolated mountain. This means that the nonlinearity and blocking effect for a double mountain is larger than that for an isolated mountain. As the separation distance between two mountains decreases, the degree of flow nonlinearity increases, while the blocking effect decreases. A rapid increase of the surface horizontal velocity downwind of each mountain near the critical mountain height for wave breaking initiation indicates that severe downslope windstorms are enhanced by wave breaking. For the flow with wave breaking, the numerically calculated surface drag is much larger than theoretically calculated one because the region with the maximum negative perturbation pressure moves from the top to the downwind slope of each mountain as the internal jump propagating downwind occurs.

• Journal of Korean Society of Steel Construction
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• v.17 no.5 s.78
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• pp.549-559
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• 2005

A railway bridge with a double composite section is proposed to enhance the structural performance of existing two-girder bridges because the governing design parameter of railway bridges is the flexural stiffness. The concrete deck in negative moment regions is neglected in the design of continuous composite bridges assuming the concrete slab has no resistance to tension. Therefore, the flexural stiffness of the composite section in the negative moment region is reduced resulting in the increase of the depth of the steel section. In order to resolve this disadvantage, several methods are suggested and the double composite section is one of the excellent solutions for extending the span length and increasing the flexural stiffness. In this study, push-out tests on lying studs and mixed stud shear connection with lying and vertical studs were performed to investigate the behavior of the shear connection in the double composite section. Static strength of the shear connection was evaluated through the test results and numerical analyses.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.195-203
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• 2005

Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is proposed to overcome the short channel effects and to increase the memory density. We need more complex voltage schemes for DG MOSFET devices. In view of peripheral circuits driving memory cells, one should consider various voltage sources used for several operations. It is one of the key issues to minimize the number of voltage sources. This criterion needs more caution in considering a DG nonvolatile memory cell that inevitably requires more number of events for voltage sources. Therefore figuring out the permissible range of operating bias should be preceded for reliable operation. We found that reliable operation largely depends on the depletion conditions of the silicon channel according to charge amount stored in the floating gates and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2D numerical simulation tool as the device simulator.

• Journal of IKEEE
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• v.27 no.4
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• pp.418-424
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• 2023

In this study, we examined the effects of annealing on electrical characteristics of double-gated silicon nanosheet (SiNS) feedback field effect transistors (FBFETs). When bias stresses were applied for 1000 s, the double-gated SiNS FBFETs were more affected by positive bias stresses than negative bias stresses regardless of the channel mode owing to the increase of interface traps caused by electrons in the inversion layers. After annealing at 300 ℃ for 10 mins, the devices were completely recovered to their original properties, and the characteristics did not change anymore when bias stresses were applied again for 1000 s.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1248-1251
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• 1995

This paper reports some results of an experimental investigation of planar double injection magnetic sensors. The threshold voltage proved to be very sensitive to an applied magnetic field. The magnitude and direction of the threshold voltage variation depends on the field strength and its orientation with respect to the conduction chennel. The positively-directed field pushes the carriers into the bulk causing an increase in the threhold voltage. These results seem to agree with a path modulation due to Lorentz force. The application of a negative field causes a negative variation, which is dependent on the surface recombination velocity of the silicon-$SiO_2$ interface.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• Bulletin of the Korean Chemical Society
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• v.11 no.6
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• pp.487-493
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• 1990

A complete potential profile of an electrical double layer is calculated from a distribution function of charged particles based upon a model where the effect of a charged electrode and the finite size of ion are explicitly included. Electrons which are distributed on the electrode surface are assumed not to penetrate the electrode/electrolyte boundary. Formation of the constant density regions and their effects on potential and the electrical double layer capacitances are studied in great detail. The distribution of surface electrons as well as the constant density regions are found to be essential in characterizing the electrical double layer. The introduction of the ion size into the prior electrical double layer model of an ideally polarizable electrode/point charged electrolyte system, shows a great improvement in its characteristics mostly at negative potential region.

• Language and Information
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• v.14 no.2
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• pp.1-16
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• 2010

On the Inherent (non-) Negativity of Negative Sensitive Items. This paper explores the idea that Korean Negative Sensitive Items, which are better viewed as Negative Concord Items (NCIs) (Kim 2001, 2006, Watanabe 2004), should not be construed as inherently negative in spite of the fact that NCIs are able to appear as an elided form without the presence of a negative licenser. Among several diagnostics, which are designed to draw syntactic and semantic distinctions between traditional Negative Polarity Items (NPIs) and NCIs employed in previous studies, the ability of an NCI to appear as a fragment answer raises the question of whether the negativity of NCIs is inherent or not. Contrary to Kim (2001, 2006) and Watanabe (2004), who are in favor of the inherent negativity of NCIs, I claim that non-negative Korean NCIs still need contentful negation to be licensed, and therefore their ability to appear as a fragment answer should be considered as a matter of ellipsis, in support of Giannakidou (2000, 2006). The main argument will be strengthened by the fact that Korean NCIs do not express negative meaning themselves, and that double negation readings are not allowed no matter how many NCIs occur simultaneously.