• Title/Summary/Keyword: Double gap

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The Design LDM with Double-Sided Moving Magnets for Short Stroke (Short Stroke에 적합한 양측식 LDM의 설계)

  • Baek, Su-Hyeon;Yun, Sin-Yong;Kim, Yong;Ham, Jung-Geol;Kim, Cheol-Jin
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.86-88
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    • 1994
  • In this paper, we present the design procedure and analysis the fundamental characteristics for Linear DC motor using permeance method and finite element method. Designed LDM is made of two permanent magnets, three iron core and amateur windings. For the design the LDM, first of all it is nessary to calculate the air gap flux density and thrust force, after that to determine core size, the numbers of winding turns, winding width, motor cross section area and losses in the coil. Also, we analysis the fundamental characteristics for implemented LDM according to proposed design procedure, and we find that the implemented LDM generated constant thrust force for costant current as long as iron of core is not saturated. Finally, we find that the proposed design procedure in this paper is effective to design and implementation of LDM.

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A Study on Double Converter for Urban Transit Power Supply (도시철도 전력공급용 더블컨버터에 관한 연구)

  • Jang, Choon-Seok;Kim, Sung-An;Kim, Hwan-Jin;Han, Gap-Jin;Cho, Yun-Hyun
    • Proceedings of the KIPE Conference
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    • 2015.11a
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    • pp.223-224
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    • 2015
  • 도시철도에서 사용하는 전력공급 장치는 대부분 다이오드를 이용하여 전차선(DC)에 공급하고 있으며, 다이오드 특성상 단방향 전력공급이 가능하기 때문에 전동차의 회생제동으로 발생하는 회생 전력을 재사용 할 수 없는 단점을 가지고 있다. 따라서 본 논문에서는 전동차에서 발생하는 회생전력을 교류 모선으로 환원시켜주기 위하여 사이리스터를 이용한 양방향 더블컨버터를 제안한다. 더블컨버터의 제어 목적은 전차선의 부하에 따라 전압을 일정하게 유지시키면서 부하 조건에 따라 안정적인 모드 전환을 하는 것이다. 이를 위하여 더블컨버터의 병렬로 운전을 통하여 순차적인 모드 전환을 위한 알고리즘을 더블컨버터 시뮬레이션을 적용하여 검증하였다.

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MO Studies on $C_{60}$ and Its Pt-Derivatives

  • Lee, Gi Hak;Lee, Han Myeong;Lee, Wang Ro
    • Bulletin of the Korean Chemical Society
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    • v.16 no.3
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    • pp.226-232
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    • 1995
  • The electronic structures of the C60, (H3P)2Pt(η2-C2H4) and (H3P)2Pt(η2-C60) are calculated by using the EHMO method with the fragment analysis. We have modified the EHT parameters so as to yield the orbital energy level correlation and to fit the optical transition gap to the previous theoretical results of C60. In Pt-derivatives, our FMO results with the modified parameters show that the carbon-carbon double bonds of C60 and ethene react like those of electron-poor arenes and alkenes, and also that C60 is more electron-susceptive than C2H4.

Comparison of Carbon Budget between Rice-barley Double Cropping and Rice Mono Cropping Field in Gimje, South Korea (국내 벼-보리 이모작지와 벼 단작지의 탄소수지 비교)

  • Shim, Kyo-Moon;Min, Sung-Hyun;Kim, Yong-Seok;Jung, Myung-Pyo;Choi, In-Tae;Kang, Kee-Kyung
    • Korean Journal of Agricultural and Forest Meteorology
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    • v.18 no.4
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    • pp.337-347
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    • 2016
  • Carbon dioxide ($CO_2$) and methane ($CH_4$) were measured in a rice-barley double cropping and rice mono cropping paddy fields, which are located in the southwestern coast of Korea, over a one-year period. Net ecosystems $CO_2$ exchange (NEE) and ecosystem respiration (Re) were estimated by the eddy covariance (EC) method, and an automatic open/close chamber (AOCC) method was used to measure $CH_4$ fluxes. Environmental factors (solar radiation, air temperature, precipitation etc.) were also measured along with fluxes. After the quality control and gap-filling, the observed fluxes were analyzed. As a result, NEE was -603.0 and $-471.5g\;C\;m^{-2}\;yr^{-1}$ in rice-barley double cropping and rice mono cropping paddy field, respectively. $CH_4$ emissions increased during the course of flooded days and were similar in two cropping paddy field. Accoding to rough results considering only fluxes of $CO_2$ and $CH_4$, it was estimated that the carbon absorbation in rice-barley double cropping paddy field was higher than that in rice mono cropping paddy field by $128.9g\;C\;m^{-2}\;yr^{-1}$.

Improving Physical Fouling Tolerance of PES Filtration Membranes by Using Double-layer Casting Methods (PES 여과막의 물리적 막오염 개선을 위한 기공 구조 개선 연구)

  • Chang-Hun Kim;Youngmin Yoo;In-Chul Kim;Seung-Eun Nam;Jung-Hyun Lee;Youngbin Baek;Young Hoon Cho
    • Membrane Journal
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    • v.33 no.4
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    • pp.191-200
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    • 2023
  • Polyethersulfone (PES) is a widely employed membrane material for water and industrial purification applications owing to its hydrophilicity and ease of phase separation. However, PES membranes and filters prepared using the nonsolvent induced phase separation method often encounter significant flux decline due to pore clogging and cake layer formation on the dense membrane surfaces. Our investigation revealed that tight microfiltration or loose ultrafiltration membranes can be subject to physical fouling due to the formation of a dense skin layer on the bottom side caused by water intrusion to the gap between the shrank membrane and the substrate. To investigate the effect of the bottom surface porosity on membrane fouling, two membranes with the same selective layers but different sub-layer structures were prepared using single and double layer casting methods, respectively. The double layered PES membrane with highly porous bottom surface showed high flux and physical fouling tolerance compared to the pristine single layer membrane. This study highlights the importance of physical optimization of the membrane structure to prevent membrane fouling.

Design of a Double-Faced Monopole Antenna Using the Coupling Effect of Induced Currents (유도 전류의 커플링 효과를 이용한 모노폴 안테나 설계)

  • Choi, Young;Lee, Seungwoo;Kim, Nam
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.12
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    • pp.1327-1336
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    • 2012
  • In this paper, the dual-faced monopole antenna, which is arranged by numerous rectangular ring patches in sequence for the multi-bands is proposed. The ring type structure of the patch can be increased the bandwidth. Therefore the bandwidth and beam width are improved by using multiple arrayed patches. When the ring type patches are inserted serially, the resonance frequencies are occurred by the current flow from the first ring patch. It is possible because the gap between the patches is very narrow. In addition, if the patches are composed on the same plane as the feed-line, fabrication could be very difficult because the gap between the patches is extremely narrow. The thickness and permittivity of the antenna, moreover, are very important parameters because both sides of the substrate are used. We finally found the optimal thickness and permittivity to generate the coupling effect by simulation. All patches are consisted of 4-steps which the patch size was decreased 85 % by each step. In conclusion, the resonant frequency bands are 1.75~2.6 GHz(850 MHz), 3.24~3.46 GHz(220 MHz), 3.8~4.0 GHz(200 MHz), and 4.4~4.9 GHz(500 MHz).

Crystal field splitting energy for $CdGa_2Se_4$ epilayers obtained by photocurrent measurement (광전류 측정으로부터 얻어진 $CdGa_2Se_4$ 에피레이어의 결정장 갈라짐에 대한 에너지)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.144-145
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    • 2009
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

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Surface Photovoltage Characteristics of ${In_{0.5}}({Ga_{1-x}}{Al_x})_{0.5}P$/GaAs Double Heterostructures (${In_{0.5}}({Ga_{1-x}}{Al_x})_{0.5}P$/GaAs 이중 이종접합 구조에 대한 표면 광전압 특성)

  • Kim, Ki-Hong;Choi, Sang-Soo;Bae, In-Ho;Kim, I n-Soo;Park, Sung-Bae
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.655-660
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    • 2001
  • Surface photovoltage spectroscopy was used to study $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$ grown by metalorganic chemical vapor deposition(MOCVD). Energy gap related transition in GaAs and $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$ were observed. By measuring the frequency dependence of $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P/GaAs$, we observed that SPV line shape does not chance, whereas the amplitude change. This results is due to the difference in the lifetimes of the photocarriers in GaAs and in $In_{0.5}(Ga_{1-x}Al_x)_{0.5}P$. We also have evaluated the parameters that describe the temperature dependences of the band gap.

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Growth and Characterization of ZnS Thin Films by Hot Wall Method (Hot Wall법에 의한 ZnS 박막의 제작과 특성)

  • Lee, Sang-Tae
    • Journal of Navigation and Port Research
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    • v.26 no.1
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    • pp.120-126
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    • 2002
  • ZnS thin films were prepared on glass substrate at various deposition conditions by a HW apparatus and were systematically investigated the growth characteristics, in terms of deposition edges by a double beam spectro- photometer, and structural analysis by a x-ray diffraction rates were increased with incresing the cell temperature and vapor pressure of sulfur, but were decreased with increasing substrate temperature. The optical characteristics of thin films depends on the deposition rates. The band gap energies of 3.46∼3.52eV measured at room temperature are smaller than the theoretical value of 3.54eV, indicating that impurities exist in the crystal. All ZnS thin films are oriented in the (III) principal direction of a zincblende structure. By introducing the S vapor, optical and crystalline properties have been improved.

Growth of HgCdTe thin film by the hot-wall epitaxy method (Hot-wall epitaxy 방법에 의한 HgCdTe 박막 성장)

  • 최규상;정태수
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.406-410
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    • 2000
  • Using the hot-wall epitaxy method, we grew a $Hg_{1-x}Cd_xTe$ (MCT) thin film in-situ after growing (111) CdTe of 9 $mu \textrm{m}$ as a buffer layer. The value of FWHM of double crystal x-ray diffraction rocking curve was 125 arcsec and the surface morphology was clean with a small roughness of 10 nm. From measuring the photocurrent of the grown MCT thin film, the maximum peak wavelength and the cut-off wavelength were 1.1050 $\mu\textrm{m}$ (1.1220 eV) and 1.2632 $\mu\textrm{m}$ (0.9815 eV), respectively. This peak wavelength corresponds to the peak of the band gap due to the intrinsic transition of the photoconductor. Therefore, the MCT thin film could be used as the photoconducting detector sensing a near-IR wavelength band from 1.0 to 1.6 $\mu\textrm{m}$.

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