• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

• Journal of the Korean Data and Information Science Society
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• v.20 no.1
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• pp.11-24
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• 2009

The process controller in the adjustment procedure is often used effectively to control the process level close to target when noise is present and unremovable. Examples of the robust controller are single EWMA controller and double EWMA controller. Double EWMA controller is designed to reduce the offset of the process deviation, which single EWMA can not eliminate. In this paper, the two controllers are modified by taking EWMA of the original controller to reduce the adjustment variance, which may become excessively large when the two given controllers are implemented. It is shown that the EWMA modification of the given controllers is successful in reducing the adjustment variance, while the mean squared deviation increases slightly.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.163-168
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• 2015

This paper analyzed the deviation of tunneling current for bottom gate voltage of sub-10 nm asymmetric double gate MOSFET. The asymmetric double gate MOSFET among multi gate MOSFET developed to reduce the short channel effects has the advantage to increase the facts to be able to control the channel current, compared with symmetric double gate MOSFET. The increase of off current is, however, inescapable if aymmetric double gate MOSFET has the channel length of sub-10 nm. The influence of tunneling current was investigated in this study as the portion of tunneling current for off current was calculated. The tunneling current was obtained by the WKB(Wentzel-Kramers-Brillouin) approximation and analytical potential distribution derived from Poisson equation. As a results, the tunneling current was greatly influenced by bottom gate voltage in sub-10 nm asymmetric double gate MOSFET. Especially it showed the great deviation for channel length, top and bottom gate oxide thickness, and channel thickness.

• Journal of Industrial Technology
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• v.31 no.A
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• pp.33-38
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• 2011

In an express tilting train, side wall insulating the noise from the exterior sound source consists of two parts. One is the layered composite panel including aluminum honeycomb, glass wool and nomex honeycomb. The other is the double glazed window. In this study, sound insulation performance of the two parts is investigated by mass law and experiment. Based on ASTM E2249-02, the intensity sound transmission loss (TL) is measured on the specimens of the two parts. Mass law deviation (MLD) is considered in order to compare the sound insulation performance in respect of weight. Contribution of each part to the sound insulation is analyzed and the sound insulation strategy for the interior noise reduction is investigated.

• Korea-Australia Rheology Journal
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• v.19 no.3
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• pp.141-146
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• 2007

We examine the wall contact of a $3\;{\mu}m$ tethered DNA chain's free end under shear with a focus on developing schemes for double-tethering in the application of making scaffolds for molecular wires. At this scale our results are found to be highly dependent on small length scale rigidity. Chain-end-wall contact frequency, mean fractional extension deficit upon contact, and standard deviation in extension upon contact are examined for scaling with dimensionless flow strength, Wi. Predictions made using a one dimensional approximation to the Smoluchowski equation for a dumbbell and three dimensional dumbbell simulations produce extension deficit, standard deviation, and frequency scaling exponents of -1/3, -1/3, and 2/3, respectively whereas more fine-grained Kratky-Porod (KP) simulations produce scaling exponents of -0.48, -0.42, and 0.76. The contact frequency scaling of 2/3 is derived from the known results regarding cyclic dynamics Analytical scaling predictions are in agreement with those previously proposed for ${\lambda}-DNA$. [Ladoux and Doyle, 2000, Doyle et al., 2000]. Our results suggest that the differences between the dumbbell and the KP model are associated with the addition of chain discretization and the correct bending potential in the latter. These scaling results will aide future exploration in double tethering of DNA to a surface.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.861-864
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• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.541-546
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• 2008

In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

• Journal of Genetic Medicine
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• v.10 no.2
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• pp.117-119
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• 2013

Double trisomy mosaicism of two different cell lines is extremely rare, particularly those that involve constitutional trisomy 8. We report a case of 47,XXX/47,XX,+8 in a 12-year-old female presenting with several skeletal anomalies. She exhibited distinct phenotypic features such as tall stature, deviation of the left middle finger, webbing of both thumbs and flexion deformities of the both third and fifth distal intermediate phalanges. A mild impulse-control disorder was observed, without mental retardation. Chromosomal and fluorescence in situ hybridization analysis demonstrated double trisomy mosaicism both on lymphocytes and buccal epithelial cells.

• Journal of Sensor Science and Technology
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• v.29 no.2
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• pp.82-88
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• 2020

In this paper, we propose a complementary metal-oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector using a double-tail comparator for high-speed and low-power operations. The GBT photodetector is based on a PMOSFET tied with a floating gate (n+ polysilicon) and a body that amplifies the photocurrent generated by incident light. A double-tail comparator compares an input signal with a reference voltage and returns the output signal as either 0 or 1. The signal processing speed and power consumption of a double-tail comparator are superior over those of conventional comparator. Further, the use of a double-sampling circuit reduces the standard deviation of the output voltages. Therefore, the proposed CMOS binary image sensor using a double-tail comparator might have advantages, such as low power consumption and high signal processing speed. The proposed CMOS binary image sensor is designed and simulated using the standard 0.18 ㎛ CMOS process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.