• 제목/요약/키워드: Double beam

검색결과 528건 처리시간 0.026초

고온 전자빔 증착에 의한 Ethylene Terephthalate상의 SiOx 박막의 특성 평가 (Characteristics of Defects in SiOx Thin films on Ethylene Terephthalate by High-temperature E-beam Deposition)

  • 한진우;김영환;김종환;서대식;문대규
    • 한국전기전자재료학회논문지
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    • 제19권1호
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    • pp.71-74
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    • 2006
  • In this paper, we investigated the characterization of silicon oxide(SiOx) thin film on Ethylene Terephthalate(PET) substrates by e-beam deposition for transparent barrier application. The temperature of chamber increases from $30^{\circ}C$ to $110^{\circ}C$, the roughness increase while the Water vapor transmission rate (WVTR) decreases. Under these conditions, the WVTR for PET can be reduced from a level of $0.57 g/m^2/day$ (bare subtrate) to $0.05 g/m^2/day$ after application of a 200-nm-thick $SiO_2$ coating at 110 C. A more efficient way to improve permeation of PET was carried out by using a double side coating of a 5-${\mu}m$-thick parylene film. It was found that the WVTR can be reduced to a level of $-0.2 g/m^2/day$. The double side parylene coating on PET could contribute to the lower stress of oxide film, which greatly improves the WVTR data. These results indicates that the $SiO_2$ /Parylene/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

Developing a new mutation operator to solve the RC deep beam problems by aid of genetic algorithm

  • Kaya, Mustafa
    • Computers and Concrete
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    • 제22권5호
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    • pp.493-500
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    • 2018
  • Due to the fact that the ratio of their height to their openings is very large compared to normal beams, there are difficulties in the design and analysis of deep beams, which differ in behavior. In this study, the optimum horizontal and vertical reinforcement diameters of 5 different beams were determined by using genetic algorithms (GA) due to the openness/height ratio (L/h), loading condition and the presence of spaces in the body. In this study, the effect of different mutation operators and improved double times sensitive mutation (DTM) operator on GA's performance was investigated. In the study following random mutation (RM), boundary mutation (BM), non-uniform random mutation (NRM), Makinen, Periaux and Toivanen (MPT) mutation, power mutation (PM), polynomial mutation (PNM), and developed DTM mutation operators were applied to five deep beam problems were used to determine the minimum reinforcement diameter. The fitness values obtained using developed DTM mutation operator was higher than obtained from existing mutation operators. Moreover; obtained reinforcement weight of the deep beams using the developed DTM mutation operator lower than obtained from the existing mutation operators. As a result of the analyzes, the highest fitness value was obtained from the applied double times sensitive mutation (DTM) operator. In addition, it was found that this study, which was carried out using GAs, contributed to the solution of the problems experienced in the design of deep beams.

암모니아를 이용하여 분자선에피탁시 방법으로 AIN/Si 기판에 성장시킨 GaN의 구조적,광학적 특성 (Optical and Structural Properties of GaN Grown on AlN/Si via Molecular Beam Epitaxy Using Ammonia)

  • 김경현;홍성의;강석준;이상현;김창수;김도진;한기평;백문철
    • 한국재료학회지
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    • 제12권5호
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    • pp.387-390
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    • 2002
  • A new approach of using double buffer layers of AlN and GaN for growth of GaN films on Si has been undertaken via molecular beam epitaxy using ammonia. The first buffers layer of AlN was grown using $N_2$plasma and the second of GaN was grown using ammonia. The surface roughness of the grown films was investigated by atomic force microscope and was compared with the normally grown films on sapphire. Double crystal x-ray rocking curve and low temperature photoluminescence techniques were employed for structural and optical properties examination. Donor bound exciton peak at 3.481 eV with full width half maximum of 41 meV was observed at 13K.

RVEGA SMC를 이용한 Ball-Beam 시스템의 안정화 (Stabilization of Ball-Beam System using RVEGA SMC)

  • 김태우;이준탁
    • 대한전기학회논문지:전력기술부문A
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    • 제48권10호
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    • pp.1327-1334
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    • 1999
  • The stabilization control of ball-beam system is difficult because of its nonlinearity and structural unstability. Futhermore, a series of classical methods such as the PID and the full state feedback controller(FSFC) based on the local linearizations have narrow stabilizable regions. At the same time, the fine tunings of their gain parameters are also troublesome. Therefore, in this paper, three improved design techniques of stabilization controller for a ball-beam system were proposed. These parameter tuning methods in the double PID controller(DPIDC), the FSFC and the a sliding mode controller(SMC) were dependent upon the Real Value Elitist Genetic Algorithm (RVEGA). Finally, by applying the DPIDC, the FSFC and the Real Variable Elitist Genetic Algorithm based Sliding Mode Control(RVEGA SMC) to the stabilizations of a ball-beam system, the performances of the RVEGA SMC technique were showed to be superior to those of two other type controllers.

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유전 알고리듬을 이용한 토션빔 현가장치의 기구학적 최적설계 (Kinematic Optimum Design of a Torsion-Beam Suspension Using Genetic Algorithms)

  • 옥진규;백운경;손정현
    • 한국자동차공학회논문집
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    • 제14권1호
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    • pp.25-30
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    • 2006
  • This study is about an optimum design to improve the kinematic and compliance characteristics of a torsion-beam suspension system. The kinematic and compliance characteristics of an initial design of the suspension was obtained through a roll-mode analysis. The objective function was set to minimize within design constraints. The coordinates of the connecting point between the torsion-beam and the trailing arm were treated as design parameters. Since the torsion-beam suspension has large nonlinear effects due to kinematic and elastic motion, Genetic Algorithms were employed for the optimal design. The optimized results were verified through a double-lane change simulation using the full vehicle model.

Series solutions for spatially coupled buckling anlaysis of thin-walled Timoshenko curved beam on elastic foundation

  • Kim, Nam-Il
    • Structural Engineering and Mechanics
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    • 제33권4호
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    • pp.447-484
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    • 2009
  • The spatially coupled buckling, in-plane, and lateral bucking analyses of thin-walled Timoshenko curved beam with non-symmetric, double-, and mono-symmetric cross-sections resting on elastic foundation are performed based on series solutions. The stiffness matrices are derived rigorously using the homogeneous form of the simultaneous ordinary differential equations. The present beam formulation includes the mechanical characteristics such as the non-symmetric cross-section, the thickness-curvature effect, the shear effects due to bending and restrained warping, the second-order terms of semitangential rotation, the Wagner effect, and the foundation effects. The equilibrium equations and force-deformation relationships are derived from the energy principle and expressions for displacement parameters are derived based on power series expansions of displacement components. Finally the element stiffness matrix is determined using force-deformation relationships. In order to verify the accuracy and validity of this study, the numerical solutions by the proposed method are presented and compared with the finite element solutions using the classical isoparametric curved beam elements and other researchers' analytical solutions.

Double layer $TiB_2$-TiN Films

  • LizhiChen;YunjieYang;ZhihongZheng;XiWang;XianghuaiLiu;Han, J.G.;Yoon, J.S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1995년도 제9회 학술발표회 논문개요집
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    • pp.141-141
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    • 1995
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As과 Ga 빔 조사에 의해 세척된 Si(100) 기판 위에 GaAs 에피층 성장과 RHEED 패턴 (GaAs Epilayer Growth on Si(100) Substrates Cleaned by As/Ga Beam and Its RHEED Patterns)

  • 임광국;김민수;임재영
    • 한국표면공학회지
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    • 제43권4호
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    • pp.170-175
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    • 2010
  • The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

온도 보상형 Double FBG센서의 제작과 기계적 변형률 측정시험 (Fabrication of a Temperature-Compensating FBB Sensor for Measurement of Mechanical Strain)

  • 정달우;권일범;최낙삼
    • 비파괴검사학회지
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    • 제25권5호
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    • pp.356-361
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    • 2005
  • 본 연구에서 개발한 온도 보상형 double FBG 센서는 서로 다른 브래그 파장을 갖는 두개의 FBG 센서를 직렬로 연결하여 다양한 열적 조건하에서 구조물의 기계적 변형률만을 실시간으로 측정하기 위한 센서이다. 이 센서를 알루미늄 보에 접착하여 다양한 온도 조건에서 변형률 측정 실험을 수행하고, 결과 값을 전기 저항식 변형률 게이지의 결과 값과 비교하였다. 본 연구에서 제작한 온도보상형 double FBG 센서는 온도의 변화에 영향을 받지 않고 기계 변형률 측정을 잘 수행하였다.