• Journal of Environmental Science International
• /
• v.17 no.11
• /
• pp.1195-1201
• /
• 2008

Enhancing with non-metallic elemental nitrogen(N) is one of several methods that have been proposed to modify the electronic properties of bulk titanium dioxide($TiO_2$), in order to make $TiO_2$ effective under visible-light irradiation. Accordingly, current study evaluated the feasibility of applying visible-light-induced $TiO_2$ enhanced with N element to cleanse aromatic compounds, focusing on xylene isomers at indoor air quality(IAQ) levels. The N-enhanced $TiO_2$ was prepared by applying two popular processes, and they were coated by applying two well-known methods. For three o-, m-, and p-xylene, the two coating methods exhibited different photocatalytic oxidation(PCO) efficiencies. Similarly, the two N-doping processes showed different PCO efficiencies. For all three stream flow rates(SFRs), the degradation efficiencies were similar between o-xylene and m,p-xylene. The degradation efficiencies of all target compounds increased as the SFR decreased. The degradation efficiencies determined via a PCO system with N-enhanced visible-light induced $TiO_2$ was somewhat lower than that with ultraviolet(UV)-light induced unmodified $TiO_2$, which was reported by previous studies. Nevertheless, it is noteworthy that PCO efficiencies increased up to 94% for o-xylene and 97% for the m,p-xylene under lower SFR(0.5 L $min^{-1}$). Consequently, it is suggested that with appropriate SFR conditions, the visible-light-assisted photocatalytic systems could also become important tools for improving IAQ.

• Asian Journal of Atmospheric Environment
• /
• v.4 no.3
• /
• pp.177-188
• /
• 2010

The use of an activated carbon (AC) system alone has the limitation that the pollutants are not eliminated but only transferred to another phase with the consumed AC becoming hazardous waste itself. Therefore, the present study investigated the feasibility of using a combined system of granular AC (GAC) with S-doped visible-light-induced $TiO_2$ (GAC/S-doped $TiO_2$) to clean monocyclic aromatic hydrocarbons (MAHs) with concentrations at $\leq$ 3 mg $m^{-3}$, using a continuous air-flow reactor. This study conducted three different experiments: an adsorption test of pure GAC and GAC/S-doped $TiO_2$; a long-term adsorptional photocatalytic (AP) activity test of GAC/S-doped $TiO_2$; and an AP activity test of GAC/S-doped $TiO_2$ under different conditions. For the AP activity test, three parameters were evaluated: various weights of GAC/S-doped $TiO_2$ (0.9, 4.4, and 8.9 g); various flow rates (FRs) (0.5, 1 and 2 L $min^{-1}$); and various input concentrations (ICs) of the target MAHs (0.1, 1, 2 and 3 mg $m^{-3}$). The adsorption efficiencies were similar for the pure GAC and GAC/S-doped $TiO_2$ reactors, suggesting that S-doped $TiO_2$ particles on GAC surfaces do not significantly interfere with the adsorption capacity of GAC. Benzene exhibited a clear AP activity, whereas no other target MAHs did. In most cases, the AP efficiencies for the target MAHs did not significantly vary with an increase in weight, thereby suggesting that, under the weight range tested in this study, the weights or FRs are not important parameters for AP efficiency. However, ICs did influence the AP efficiencies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.11
• /
• pp.683-689
• /
• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Journal of the Korean Ceramic Society
• /
• v.56 no.2
• /
• pp.111-129
• /
• 2019

Recently, all-solid-state batteries (ASSBs) have attracted increasing interest owing to their higher energy density and safety. As the core material of ASSBs, the characteristics of the solid electrolyte largely determine the performance of the battery. Thus far, a variety of inorganic solid electrolytes have been studied, including the NASICON-type, LISICON-type, perovskite-type, garnet-type, glassy solid electrolyte, and so on. The garnet Li₇La₃Zr₂O₁₂ (LLZO) solid electrolyte is one of the most promising candidates because of its excellent comprehensively electrochemical performance. Both, experiments and theoretical calculations, show that cubic LLZO has high room-temperature ionic conductivity and good chemical stability while contacting with the lithium anode and most of the cathode materials. In this paper, the crystal structure, Li-ion transport mechanism, preparation method, and element doping of LLZO are introduced in detail based on the research progress in recent years. Then, the development prospects and challenges of LLZO as applied to ASSBs are discussed.

• Korean Journal of Materials Research
• /
• v.8 no.9
• /
• pp.860-864
• /
• 1998

We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$(x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from $1100^{\circ}C$ to $1400^{\circ}C$, showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3$10\mu\textrm{m}$ with a small amounts of agglomerated particles above $10\mu\textrm{m}$.

• Proceedings of the Korea Contents Association Conference
• /
• 2008.05a
• /
• pp.301-305
• /
• 2008

An organic light-emitting diode(OLED) has advantages of low power driving, self light-emitting, wide viewing angle, excellent high resolution, full color, high reproduction, fast response speed, simple manufacturing process, or the like. However, there are still a number of challenges to get over in order to put it to practical use as a high performance display. First of all, the most important thing is to improve the efficiency of the OLED element in order to commercialize it. To this end, its efficiency can be improved by lowering the driving voltage through the improvement of structure of the OLED element and the application of new organic substance. Therefore, in this study, we have manufactured a red OLED element by applying fluorescent dyes to the emitting layer of the element having the structure of ITO/TPD/Znq2+DCJTB/Znq2/Al and the structure of ITO/CuPc/NPB/Alq3+DCJTB/Alq3/Al, in order to light-emitting various colors or improve the brightness and the efficiency, and then we have evaluated its electrical and optical characteristics.

• Mass Spectrometry Letters
• /
• v.12 no.2
• /
• pp.47-52
• /
• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• Journal of Welding and Joining
• /
• v.9 no.3
• /
• pp.26-33
• /
• 1991

As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

• Mass Spectrometry Letters
• /
• v.12 no.1
• /
• pp.26-30
• /
• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• Journal of Environmental Science International
• /
• v.18 no.11
• /
• pp.1215-1224
• /
• 2009

This study evaluated the applicability of visible-light-driven N- and S-doped titanium dioxide($TiO_2$) for the control of low-level dimethyl sulfide(DMS) and dimethyl disulfide(DMDS). In addition, a photocatalytic unit(PU)-adsorption hybrid was evaluated in order to examine the removal of DMS and DMDS which exited the PU and a gaseous photocatalytic byproduct($SO_2$) which was generated during the photocatalytic processes. Fourier-Tranform-Infrared(FTIR) spectrum exhibited different surface characteristics among the three-types of catalysts. For the N- and S-doped $TiO_2$ powders, a shift of the absorbance spectrum towards the visible-light region was observed. The absorption edge for both the N- and S-doped $TiO_2$ was shifted to $\lambda$ 720 nm. The N-doped $TiO_2$ was superior to the S-doped $TiO_2$ in regards to DMS degradation. Under low input concentration(IC) conditions(0.039 and 0.027 ppm for DMS and DMDS, respectively), the N-doped $TiO_2$ revealed a high DMS removal efficiency(above 95%), but a gradual decreasing removal efficiency under high IC conditions(7.8 and 5.4 ppm for DMS and DMDS, respectively). Although the hybrid system exhibited a superior characteristic to PU alone regarding the removal efficiencies of both DMS and DMDS, this capability decreased during the course of a photocatalytic process under the high IC conditions. The present study identified the generation of sulfate ion on the catalyst surface and sulfur dioxide(maximum concentrations of 0.0019 and 0.0074 ppm for the photocatalytic processes of DMS and DMDS, respectively) in effluent gas of PU. However, this generation of $TiO_2$ would be an insignificant addition to indoor air quality levels.