• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.421-422
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• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.79-79
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• 2009

Samples of Ta-doped in $In_2O_3-ZnO-SnO_2$(IZTO) with a doping level up to 4wt% were sintered at $1600^{\circ}C$ in $O_2$. The crystal phase of the samples was identified by an X-ray diffraction experiment. apparent density and porosity with sintered temperature from $1500^{\circ}C$ to $1640^{\circ}C$ are mesured by archimedes method. For each sample, the specific resistivity was determined. samples of sintered at $1600^{\circ}C$ had the highest density and lowest porousity and The Ta 0.25-wt%-doped IZTO ceramics had the lowest resistivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.920-926
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• 1994

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.647-647
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the structures, energetics and charge transport characteristics of nitrogen-doped graphene and graphene nanoribbons (GNRs) with additional doping of phosphorus or boron atoms. Considering graphitic, pyridinic, and porphrin-like N doping sites and increasing N-doping concentration, we analyze the structures of N-P and N-B doped graphene and particularly focus on how they affect the charge transport along the lateral direction. For the GNRs, we also consider the differences between defects formed at the edge and bulk regions. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Electrical & Electronic Materials
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• v.5 no.3
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• pp.310-319
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• 1992

LPCVD 방법으로 625.deg.C와 560.deg.에서 증착한 다결정 실리콘에 As이온주입량을 lx$10^{13}$-lx$10^{16}$/$cm^{2}$로 변화시키면서 열처리 전, 후의 미세구조와 전기적 특성 변화를 조사하였다. 625.deg.C에서 증착한 시편은 columnar구조를 하고 있어 표면이 매우 거칠었으며 900.deg.C, 30분 열처리 후에는 As doping 농도에 관계없이 결정립 크기는 200-300.angs.정도였다. 560.deg.C에서 증착한 시편은 비정질 상태로열처리 후에는 1000.angs.이상의 큰 결정립을 갖는 타원형의 결정립으로 성장하였으며 표면이 매우 smooth하였다. 같은 doping 농도에서 전기 전도도와 Hall mobility는 비정질 상태로 증착한 시편이 큰 결정립으로 인하여 다결정 상태로 증착한 시편에 비해 크게 되었다. Grain boundary trapping model에 의해 계산한 potential barrier height는 As doping 농도가 증가함에 따라 감소하였으며 grain boundary trap density는 증착 온도, As doping 농도 및 결정립 크기에 크게 관계없이 3.6~5*$10^{12}$/$cm^{2}$로 측정되었다.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.55-58
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• 2022

Carbon-based doping to MgB₂ superconductor is the simplest approach to enhance the critical current densities under magnetic fields. Carbon quantum dots is synthesized in this work as a carbon provider to MgB₂ superconductors. Polyvinyl Pyrrolidone is pyrolyzed and dispersed in dimethylfomamide solvent as a dopant to the mixture of Mg and B powders. Doped MgB₂ bulk samples clearly show the decrease of a-axis lattice constant, grain refinements, and broadening of FWHM of diffraction peaks compared to un-doped MgB₂ possibly due to the carbon substitution and/or boron vacancy at the boron site in MgB₂ lattice. Also, high-field J_c for the doped MgB₂ is enhanced significantly with the crossover about 3 T at 5 & 20 K when increasing the doping of carbon quantum dots.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.