• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.538-548
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• 2003

We studied effects by Re$_2$O$_3$(R=Dy, Gd, Ho) addition on the properties of Mn-Zn ferrite. The doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ceramics. With increasing the rare earth oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. In case of excessive addition of additive beyond some level, initial permeability properties of ferrite have gone down in spite of anomalous grain. With increasing the content of additive, both the real and imaginary component of complex permeability and the magnetic loss (tan$\delta$) increased. Because the increased rate of real component had higher than imaginary component, magnetic loss increased none the less for increasing the real component related with magnetic permeability. But, the magnetic loss of ferrite doped with the rare earth oxides was lower than that of Mn-Zn ferrite at any rate. The small amount of present rare earth oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary. It was seem to be due to the formation of mutual reaction such as between iron ions and rare earth element ions.

• Progress in Superconductivity
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• v.10 no.1
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Applied Microscopy
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• v.46 no.1
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• pp.20-26
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• 2016

Our work on $Sc_2O_3-W$ matrix dispenser cathodes had been reviewed in this paper. The cathode with uniform distribution of $Sc_2O_3$ had been obtained using liquid-liquid doping method. The cathode had excellent emission property, i.e., the emission current density in pulse condition could reach over $35A/cm^2$. It was found that the cathode surface was covered by a Ba-Sc-O active substance multilayer with a thickness of about 100 nm, which was different from the monolayer and semiconducting layer in thickness. Furthermore, the observation results displayed that nanoparticles appeared at the growth steps and the surface of tungsten grains of the fully activated cathode. The calculation result indicated that the nanoparticles could cause the increase of local electric field strengths. We proposed the emission model that both the Ba-Sc-O multilayer and the nanoparticles distributing mainly on the growth steps of the W grains contributed to the emission. The future work on this cathode has been discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.10
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• pp.3039-3045
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• 2013

Dual-frequency ultrasound assisted photocatalysis (DUAP) method was proposed to degrade a stable organic model effluent, cresol red (CR), using the prepared $Fe^{3+}$-doped $TiO_2$ with active carbon fiber loading ($Fe^{3+}-TiO_2/ACF$) as photocatalyst. The influence of key factors, including Fe doping amount and power density of dual-frequency ultrasounds (20/40 kHz), on the degradation efficiency was investigated. The degradation efficiency rises to 98.7% in 60 min accompanied by the color removal of CR liquid samples from yellow to colorless transparent at optimal conditions. A synergy index of 1.40 was yielded by comparison with single ultrasound assisted photocatalysis (SUAP) and the photocatalysis without ultrasound assisted (UV/$TiO_2$), indicating that a clear synergistic effect exists for the DUAP process. Obvious enhancement of degradation efficiency for the DUAP process should be attributed to production of large amount of free radicals by strong cavitational effects of dual ultrasounds.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.228-232
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• 2003

The effects of$ Nd_2$$O_3$addition on the properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. With increasing the Neodymium oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. With increasing the content of Neodymium oxides. both the real and imaginary component of complex permeability and the magnetic loss(tan$\delta$) increased. Because reason that magnetic loss increases is high ratio that a real department increases than imaginary department. Magnetic loss increased none the less for increasing the real department related with magnetic permeability. But, the magnetic loss of ferrite doped with the Neodymium oxides were lower than that of none doped Mn-Zn ferrite. The small amount of percent Neodymium oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.295-295
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• 2013

Supercapacitors with higher energy and power density are attracting growing attention for their wide range of potential applications such as portable electronic equipments, hybrid vehicle and cellular devices. In various classes of materials for supercapacitors, the redox pseudocapacitive materials such as conducting polymers and metal oxides have been most widely studied recently. The nanostructuring of the electrode surface has also been focused on since it can provide large surface area and consequently easy diffusion of ions in the capacitors. Among the active materials, in this work, we have used polyaniline (PANi) and manganese oxide ($MnO_2$). PANi is one of the promising electrode and active materials due to its desirable properties such as high electrochemical activity, high doping level and stability. $MnO_2$ is also widely studied material for supercapacitors since it is relatively cheap and environmentally friendly. In this work, we fabricated PANi hollow nanospheres by polymerizing aniline monomers on the polystyrene (PS) nanospheres and then dissolving the inner PS spheres. This nanostructuring of the PANi surface can provide large surface area and hence easy diffusion of electrolyte ions. We also incorporated $MnO_2$ nanoparticles into the PANi hollow nanospheres and investigated its electrochemical properties. It is expected that the combination of these two active materials with slightly different working potential windows show synergetic effects such as broader working potential range and enhanced specific capacitance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.236-241
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• 2004

New electrolytes of cubic L $a_2$M $o_2$-x Nbx $O_{9-}$$\delta$/(x=0, 0.05, 0.1, 0.2) were fabricated by a solid-state reaction method and their sintered densities were approximately 93％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The at complex impedance were measured at 34$0^{\circ}C$ to 93$0^{\circ}C$ in air and fitted with a Solatron ZView program. Their impedance spectra showed big difference below and over the phase transition temperature (58$0^{\circ}C$). The electrical conductivity of L $a_2$M $o_2$ $O_{9}$ was 1.36${\times}$10$^{-2}$ S$cm^{-1}$ / at 817$^{\circ}C$. Comparing to undoped L $a_2$M $o_2$ $O_{9}$ , Nb-doped specimen showed the increase of electrical conductivity due to the aliovalent doping effect..

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.632-637
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• 2000

Thermoelectric conversion properties of commercial Fe-Si2 and Fe-Si alloy ingots prepared by RF inductive furnace were investigated. As sintering temperature increased, density of the specimen increased and the phase transformation from metallic phases ($\varepsilon$-FeSi, ${\alpha}$-Fe2Si5) to semiconducting phase (${\beta}$-FeSi2) occurred more effectively. The FeSi phase was detected even after 100hrs of annealing treatment. For the Fesi1.95∼FeSi2.05 specimens prepared by RF inductive furnace, the thermoelectric property improved as the composition of the specimen approached to stoichiometric composition FeSi2. Electrical conductivity of the specimen increased with increasing temperatures showing typical semiconducting behavior. From the electrical conductivity measurements, activation energy in the intrinsic region (above about 700 K) was calculated to be approximately 0.46 eV. In spite of non-doping, the Seebeck coefficient for every specimen exhibited p-type conduction due to Si deficiency. Its maximum value was located at about 475 K, and then decreased abruptly with increasing temperatures. The power factor was governed by the Seebeck coefficient of the specimen more significantly than by electrical conductivity.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.