• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.281-287
• /
• 1998

$BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1998-2000
• /
• 2005

The effects of the addition of nanocrystalline Y2O3 powder on the microstructure and superconducting properties have been investigated in YBCO films prepared by TFA-MOD process. Precursor solution doped with extra $Y_2O_3$ Powder was prepared by adding $Y_2O_3$ powder into a stoichiometic precursor solution with a cation ratio of Y:Ba:Cu=1:2:3. Coating solutions with and without $Y_2O_3$ doping were coated on $LaAlO_3(100)$ single crystal by a dip coating method, cacination and conversion heat treatments were performed at the controlled atmosphere containing water vapor Current carry capacity(Jc) of YBCO film was enhanced about 50% by $Y_2O_3$ doping. It is thought that the enhancement of Jc is due to the better connectivity of YBCO grains and/or the flux pinning by the presence of nanocrystalline $Y_2O_3$ Particles embedded in YBCO grains.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.12a
• /
• pp.33-34
• /
• 2006

The effects of Ba and Ce addition has been investigated in YBCO prepared by trifluoroacetate (TFA) metalorganic depostition (MOD) method. Precursor solutions with cation ratios of Y:Ba:Cu:Ce = 1:2+x:3:x (x = 0, 0.05, 0.1 and 1.5) have been prepared by adding an excess amount of cerium and barium. Coated film was calcined at lower temperature and conversion heat treatment at temperature of $780{\sim}810^{\circ}C$. It has been shown that the critical current (Ic) of YBCO film was degraded by doping of Ba and Ce atoms. But Ic was increased as the amount of doped Ba and Ce content increased from 5 % to 15 %. It was observed that there was little increase of a flux pinning force with Ba and Ce addition in YBCO film prepared by TFA-MOD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.174-175
• /
• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• Journal of radiological science and technology
• /
• v.28 no.1
• /
• pp.1-7
• /
• 2005

High-quality single crystals of pure $Li_2B_4O_7$ as well as $Li_2B_4O_7$ doped with Cu, Mn and Mg impurities (1.0mol%, respectively) have been grown from the melt of $Li_2CO_3+2B_2O_3$ by Czochralski method in platinum crucibles. To study the thermoluminescent properties, $Li_2B_4O_7$ series single crystal TLDs were made by cutting in the size of $4{\times}5{\times}1\;mm^3$. The glow curves show two or three peaks which can be easily deconvoluted. It is observed that room temperature($20{\sim}30^{\circ}C$) fadings of the dosimetric peaks of $Li_2B_4O_7$ series single crystal TLDs were about 10 % for 30 days. The relative photon energy response for $Li_2B_4O_7$ series single crystal TLDs were about 85 % when the responses were normalized to that measured with $^{60}Co\;(1.25\;MeV)\;{\gamma}-rays$. The measured data are in a good agreement with theoretical ones. The $Li_2B_4O_7$ series single crystal TLDs fabricated in this work can be used for monitoring personal and environmental radioactivity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.251-251
• /
• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.218-218
• /
• 2012

Recently, hexagonal manganites have attracted much attention because of the coexistence of ferroelectricity and antiferromagnetic (AFM) order. The crystal structure of hexagonal manganites consists of $MnO_5$ polyhedra in which $Mn^{3+}$ ion is surrounded by three oxygen atoms in plane and two apical oxygen ions. The Mn ions within Mn-O plane form a triangular lattice and couple the spins through the AFM superexchange interaction. Due to incomplete AFM coupling between neighboring Mn ions in the triangular lattice, the system forms a geometrically-frustrated magnetic state. Among hexagonal manganites, $YMnO_3$, in particular, is the best known experimentally since the f states are empty. In addition, for applications, $YMnO_3$ thin films have been known as promising candidates for non-volatile ferroelectric random access memories. However, $YMnO_3$ has low magnetic order temperature (~70 K) and A-type AFM structure, which hinders its applications. We have synthesized $YMn1_{-x}Cr_xO_3$ (x = 0, 0.05 and 0.1) samples by the conventional solid-state reaction. The powders of stoichiometric proportions were mixed, and calcined at $900^{\circ}C$ for $YMn1_{-x}Cr_xO_3$ for 24 h. The obtained powders were ground, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, and heated up to $1,300^{\circ}C$ and sintered in air for 24 h. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu $K{\alpha}$ radiation. All the magnetization measurements were carried out with a superconducting quantum-interference-device magnetometer. Our experiments point out that the Cr-doped samples show the characteristics of a spin-glass state at low temperatures.

• Current Photovoltaic Research
• /
• v.5 no.1
• /
• pp.1-8
• /
• 2017

Two different fluorine-doped tin oxide (FTO)-coated glass substrates were investigated to find better suitability for CdTe solar cells. Substrate A consisted of FTO (300 nm)/$SiO_2$ (24 nm)/intrinsic $SnO_2$ (30 nm)/borosilicate glass (2.2 mm), and substrate B consisted of FTO (700 nm)/intrinsic $SnO_2$ (30nm)/borosilicate glass (1.8 mm). The overall thickness of the FTO/glass substrates was about 2.5 mm. The total light transmittance of substrate B was much higher than that of substrate A throughout the whole spectral region, even though the thickness of the FTO in substrate B was twice larger than that of the FTO in the substrate A. The short-circuit current greatly increased in substrate B and the external quantum efficiency (EQE) increased over the whole wavelength range. This study shows that the diffuse optical transmittance played a key role in the large EQE value in the blue wavelength region, and the direct transmittance played a key role in the large EQE value in the red wavelength region. The higher transmittance is due to the rough surface generated by the thicker FTO on glass. The conversion efficiency of the CdTe solar cell increased from 12.4 to 15.1% in combination of rough FTO substrate and Cu solution back contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.160-160
• /
• 2010

In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is $1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample, $1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at $250^{\circ}C$ and $6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at $300^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.47-52
• /
• 2013

Gold wire has long been used as a proven method of connecting a silicon die to a substrate in wide variety of package types, delivering high yield and productivity. However, with the high price of gold, the semiconductor packaging industry has been implementing an alternate wire material. These materials may include silver (Ag) or copper (Cu) alloys as an alternative to save material cost and maintain electrical performance. This paper will analyze and compare the electrical characteristics of several wire types. For the study, typical 0.6 mil, 0.8 mil and 1.0 mil diameter wires were selected from various alloy types (2N gold, Palladium (Pd) coated/doped copper, 88% and 96% silver) as well as respective pure metallic wires for comparison. Each wire model was validated by comparing it to electromagnetic simulation results and measurement data. Measurements from the implemented test boards were done using a vector network analyzer (VNA) and probe station setup. The test board layout consisted of three parts: 1. Analysis of the diameter, length and material characteristic of each wire; 2. Comparison between a microstrip line and the wire to microstrip line transition; and 3. Analysis of the wire's cross-talk. These areas will be discussed in detail along with all the extracted results from each type the wire.