• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.5-9
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• 2007

Phase transition and dopant redistribution during silicidation of $CoSi_2$ thin films were characterized depending on their preparation methods. Our results indicated that cleanness of the substrate surface played an important role in the formation of the final phase. This effect was found to be reduced by addition of W resulting in the formation of $CoSi_2$. However, even in this case, the formation of the final phase was achieved at the cost of extra thermal energy, which induced rough interface between the substrate and the silicide film. As for the dopant redistribution, the deposition sequence of Co and Si on SiGe was observed to induce significant differences in the dopant profiles. It was found that co-deposition of Co and Si resulted in the least redistribution of dopants thus maintaining the original dopant profile.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.253-258
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• 1992

ZnO varistors were prepared by the organochemical method which used citric acid and ethylene glycol as gelling agents. The microstructure of the sintered specimens exhibited small grains, uniform grain size distribution, and few intragranular pores. Thermal decomposition of the organic resin formed during the powder preparation process was completed around 450$^{\circ}C$. No significant changes were observed in microstructure and current voltage characteristic with respect to calcination temperatures. A major advantage of the organochemical method used in this experiment is a possible uniform mixing of trace amounts of dopants. Therefore, this powder preparation method seems promising in investigating the effect of Li or In ion, which is added in ppm level to ZnO varistors, on the pulse respose characteristic.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.281-288
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• 1995

to prepare the TiO2 thin films, acetyl-acetone(2.4-pentanedione)(1 : 1 molar ratio) was dissolved in the propanol solution of titanium(IV)isopropoxide(Ti[OCH(CH3)2]4). Al, Cr and Sb in the form of soluble salt and niobium ethoxide were added s dopants, respectively. Thin films were coated by the dip-coating method and characteristics were investigated by XRD, SEM and conductance meter. As a result, viscosity of sol was maintained below 4 centi Poise more than 20 days, and crystal growth and diminution of resistivity occurred as the heat treatment temperature increased. The grains grew over 1${\mu}{\textrm}{m}$ and the lowest resistivity was obtained when Nb was added at 130$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1221-1226
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• 1997

The effects of sintering atmosphere and dopant addition on the behavior of densification and grain growth of SnO2 ceramics were investigated with consideration of defect chemistry. CoO and Nb2O5 were chosen as dopants, and oxygen and nitrogen were used for controlling of sintering atmospheres. With the decrease of oxygen partial pressure, densification was depressed due to evaporation of SnO2 ceramics. In the case of SnO2 sintering, the addition of CoO, which produced oxygen vacancy in SnO2 ceramics, led to acceleration of densification and grain growth. On the contrary, when Nb2O5 as a dopant producing Sn vacancy was added to SnO2 ceramics, densification and grain growth were simultaneously retarded. As results, it was conformed that diffusion of oxygen ions was rate determinant in densification and grain growth of SnO2 ceramics.

• Journal of the Korean Ceramic Society
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• v.13 no.2
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• pp.8-16
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• 1976

The conductive transparent film is prepared by spraying thin salt solution. In stannic chloride solution as a base solution, various dopants such as Al, Co, Cu and Ni were dissolved respectively as a chloride state and then the films were made by spraying solutions on hot glass plates. The properties of them were compared with those of the stannic salt single component film. The films doped with copper oxide and nickle oxide were improved by decreasing their sheet resistivity and temperature coefficient of resistivity. In comparison with the sheet resistivity and temperature coefficient of resistivity of stannic oxide single component film, being 2.5 K ohm/$\textrm{cm}^2$ and -1650ppm/$^{\circ}C$ respectively, its values of the film containing 15 mol % of copper oxide and formed at 40$0^{\circ}C$ were 2.5K ohm/$\textrm{cm}^2$ and -920ppm/$^{\circ}C$ respectively. The film containing 15 mol % of nickel oxide and formed at 50$0^{\circ}C$ has shown its sheet resistivity and temperature coefficient 0.7 K ohm/$\textrm{cm}^2$ and -940ppm/$^{\circ}C$ respectively.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.721-723
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• 1992

The electrical resistivity and piezoelectric properties have been studied for Lead Zirconate-Titanate(PZT) with $Nb_2O_5$ dopant, fabricated from conventional mixed-oxide powders and molten salt synthesis. The resistivity and electromechanical coupling factor(Kp) were increased with increasing Nb contents. The reason for increasing of the electrical resistivity below the Curie Temperature(Tc), It is believed that the p-type electrical conduction in PZT is caused by the lead vacancies. The electromechanical coupling factor(Kr) and piezoelectric constant $d_{33}$ were improved by Nb additives. This behavior can be explained as a compensation effect and $Nb^{5+}$ can serve as a donar and contribute electrons to the conduction process. As a result, the optimized $Nb_2O_5$ dopants on the PZT specimens were 0.75 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1116-1120
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• 2002

Using thermal hydrolysis and hydrothermal treatment, photocatalytic $TiO_2$ powders were synthesized. During the synthesis, the addition of other transition metals such as iron, copper, etc., affected the photocatalytic capability of synthesized powders, and enabled the activation by visible light. To enhance photocatalytic capacity of gas phase decomposition, the rate-determining adsorption rate of pollutant gases were improved via surface modification of $TiO_2$ powders. The surface modifiers were implanted using mechanochemical synthesis of dopants and photocatalytic powders.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.232-232
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• 2006

Intramolecular energy transfer in heteroleptic red phosphorescent dopant materials with mixed ligand units in one molecule was studied. 1-phenylisoquinoline(piq) and phenylpyridine(ppy) moieties were introduced as ligands for Ir based phosphorescent dopants and light emission mechanism was investigated. Intramolecular energy transfer from ppy ligand to piq ligand resulted in pure red emission without any green emission from ppy. Current efficiency of red devices was improved from 4 cd/A to 4.8 cd/A by using mixed ligand structures and deposition temperature of red dopant could be lowered by introducing ppy ligand.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1852-1858
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• 1990

The sheet resistance and thickness of Ti-Silicides treated RTA at 600, 700, 800\ulcorner was measured with amount of BF2 implanted in Si substrate. And the profile of BF2 was studied by SIMS. The formation of TiSi2 starts at 700\ulcorner. The Ti-Silicides almost consist of TiSi2 and have a low resistivity about 16列 cm at 800\ulcorner. The sheet resistances of Ti-silicides increase and thicknesses of it decrease with increasing dose of BF2. Considering the results of SIMS and the thickness of native oxide, the decrease of thickness of Silicides chiefly results from the increase of native oxide thickness with increasing dopants.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.