• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.435-438
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• 2008

We demonstrated the efficient blue organic light-emitting diodes (OLEDs) by employing diarylamino-fluorene derived blue fluorescent molecules as dopants. Among those, a device exhibited blue emission with the luminous efficiency of 11.2 cd/A at $20\;mA/cm^2$, the external quantum efficiency of 9.7% at $20\;mA/cm^2$, and the $CIE_{x,y}$ coordinates of (x=0.163, y=0.259) at 8V.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1516-1519
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• 2008

We report extremely low doping technology in phosphorescent organic light emitting diodes(PHOLEDs). Highly efficient red PHOLEDs with excellent energy transfer characteristics even under 1 % doping condition have been demonstrated. Results reveal efficient host-dopant system to realize highly efficient PHOLEDs and useful cost saving way by reduction of expensive Ir complex dopants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.3
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• pp.108-112
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• 2007

Cubic Zirconia single crystals having changeable color with light source were grown by skull melting method. Strong absorption of yellow color region light by Co and Nd and the absorption in violet color region by Fe led the color change from blue-green to red-purple with the light source from fluorescent to incandescent lamp. Color of crystals varied not only by the dopants but yttria contents and the conditions far heat treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.357-362
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• 2006

OLEDs are becoming established as a commercially viable flat panel display technology of choice of the $21^{st}$ century because of its lightweight, fast response time, lower thickness than LCD's and potentially low cost (1-2). For the OLEDs to function effectively, highly thermally stable materials, which offer high efficiency and long operational lifetimes are required. To achieve long lifetime, highly stable charge (both holes and electrons) transporters are essential. OLED-T provides these materials as well as fluorescent and phosphorescent dopants. This paper reports a unique patented hole injector (E9363) and an electron transporter (E246) that increases the lifetime and efficiency and reduces operating voltage. Further, an electron injector, EEI-101, which evaporates at a very low temperature of $300^{\circ}C$ as opposed to the conventional LiF, which requires $580^{\circ}C$, is also presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1692-1696
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• 2006

Dopant and host molecules for charge transport layer in OLED have been developed. They enable implementation of the PIN OLED technology in mass production. We review the status of PIN OLED with main focus on top-emission structures and operation stability at elevated temperatures. A green phosphorescent top-emission device with 2.5 V operating voltage and 90 lm/W at 1000 $cd/m^2$ is presented. For a red top-emission device, lifetime exceeding 100,000 h at 500 $cd/m^2$ initial brightness is reported. Operational stability at $80^{\circ}C$ has been investigated. A lifetime of 17,000 h at 500 $cd/m^2$ has been achieved. Finally, we comment on further reduction of the operating voltage in OLED.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.211-215
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• 1992

Crack free PbTiO3 ceramics were produced by sol-gel processing using alkoxide, which has not been reported to be successful. The PbTiO3 gels were prepared from Ti alkoxide and lead acetate without any dopants. They were calcined at $600^{\circ}C$ and miled to produce fine PbTiO3 powder. It was pressed into discs and they were sintered at 110$0^{\circ}C$ for a few hours. The sintered ceramics were relativley hard and dense as having about 96% of theoretical density of PbTiO3. Fabrication of pure PbTiO3 ceramics by sol-gel processing is possibly due to their small grain size and uniform distribution of residual stress created during cubic-tetragonal transition over large number of small grains in fine grain PbTiO3 ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.27-27
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• 2010

This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.153-153
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• 2010

We have developed blue phosphorescent organic light emitting diode using spin-coated poly(9-vinylcarbazole) (PVK) host layer doped with blue phosphorescent material, Iridium(III) bis(4,6-difluorophenyl)-pyridinato-N,C2) picolinate (FIrpic). the concentration of FIrpic dopants was varied from 2% to 10%. The electrical and optical characteristics of the blue phosphorescent OLED with PVK:FIrpic layer were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.351-352
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• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.126-133
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• 1994

Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.