• Macromolecular Research
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• v.15 no.5
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• pp.412-417
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• 2007

In the present study, crosslinked poly(vinyl alcohol) (PVA) membranes were prepared at different temperatures using poly(styrene sulfonic acid-co-maleic acid) (PSSA_MA) (PVA:PSSA_MA = 1:9). The hybrid mem-branes were prepared by varying the TEOS content between 5 and 30 wt%. The PSSA_MA was used both as a crosslinking agent and the hydrophilic group donor ($-SO_3H$ and/or-COOH). The proton conductivity increased with up to 20 wt% TEOS, but decreased above this level, although the water content decreased with increasing TEOS content. This result suggests that the silica doped into the membrane improved the formation of proton-conduction pathways due to the absorption of molecular water. The PVA/PSSA_MA/Silica containing TEOS 20% showed both high proton conductivity (0.026 S/cm at $90^{\circ}C$) and low methanol permeability ($5.55{\times}10^{-7}cm^2/s$).

• Korean Journal of Materials Research
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• v.16 no.11
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• pp.705-709
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• 2006

Nb was doped to Pb-free $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) by a solid state mixing process to form $(Bi_{0.5}Na_{0.5})Ti_{1-x}Nb_xO_3\;(x=0{\sim}0.05)$ (BNTNb) and its doping effects on ferroelectric and piezoelctric properties of BNT were investigated. The BNTNb solid solutions were formed up to x=0.01 with no apparent second phases while grain sizes decreased. As x increased, coercive field ($E_c$) and mechanical quality factor ($Q_m$) decreased but piezoelectric constant ($d_{33}$) increased, which indicates Nb acts as a donor for BNT.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.143-144
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.172-178
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• 1997

Polyaniline(PANI)-stearic acid(SA) composite monolayer was formed at the air-water interface. The stearic acid as a surfactant was used to promote PANI monolayer formation. Uniform PANI-SA monolayer assemblies with Y type and transfer ratio of ca. 1 were fabricated using the Langmuir-Blodgett(LB) technique. The PANI-SA composite LB films with high electrical conductivity of $10^{-1}{\sim}10^{-2}S/cm$ were obtained by doping of HCl or $I_2$, and their conductivity revealed essentially close value as that of conventional PAHI-HCl complex. Especially, iodine is found to be the most promising dopant, since it gives a remarkable stability for the application as a polymer electrode in the MIM molecular device consisted of acceptor, sensitizer, and donor. The structure and physical properties of PANI-SA LB films were investigated through the near-ir UV, FT-IR, and Cyclic voltammetry.