• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.183-184
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• 2005

In this study, our varistors based on M.Matsuoke's composition were fabricated with ZnO nano-powder whose sizes were 50nm and 100nm. Electrical properties of ZnO nano-powder varistors were obtained by capacitance-voltage and frequency-real impedance. nano-powder varistors are indicated the change of the interface defects density $N_t$ at the grain boundaries and the donor concentration $N_d$ in the ZnO grains. Frequency analysis was accomplished to understand the equivalent circuit.

• Journal of Electrochemical Science and Technology
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• v.7 no.4
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• pp.286-292
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• 2016

Chemically amplified electrochemical detection, redox-active probe being amplified its electrochemical anodic current by a sacrificial electron donor presenting in solution, holds great potential for simple and quantitative bioanalytical analysis. Herein, we report the chemically amplified electrochemical analysis that drastically enhanced a detection of ferrocenemethanol (analyte) by ferrocyanide (chemical amplifier) on 4-nitrophenyl grafted glassy carbon electrodes at $60^{\circ}C$. The glassy carbon electrode grafted with a 4-nitrophenyl group using an electrochemical reduction suppressed the oxidation of ferrocyanide and thus enabled detection of ferrocenemethanol with excellent selectivity. The ferrocenemethanol was detected down to an nM range using a linear sweep voltammetry under kinetically optimized conditions. The detection limit was improved by decreasing the concentration of the ferrocyanide and increasing temperature.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.258-266
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• 1989

The effects of grain size and dopant ZnO on the photoelectrochemical conversion in TiO2 ceramic electrodes have been investigated. The photocurrent increases with increasing grain size in the undoped TiO2 ceramic electrode. In ZnO-doped TiO2 electrodes, the photocurrent decreases with increasing ZnO up to 0.4 wt% due to decrease of donor concentration, and then with further addition of ZnO, photocurrent increases according to the formation of second phase. However, the photoresponse appears at wavelength of 420nm, which is very close to the energy band gap of TiO2, regardless of grain size and amount of ZnO.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.504-509
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• 2018

The influence of yttrium doping on varistor properties of zinc-vanadium-based ceramics was comprehensively investigated. The average grain size varied slightly between 5.2 and $5.5{\mu}m$ as the yttrium content increased; and similarly, the sintered density varied slightly between 5.47 and $5.51g/cm^3$. The threshold field exhibited a maximum value (5387 V/cm) when the yttrium content was 0.1 mol%. The highest nonlinear exponent (67) was obtained when the yttrium content was 0.05 mol%. The donor concentration increased in the range of $(2.46-5.56){\times}10^{17}cm^{-3}$ as the yttrium content increased, and the maximum barrier height was obtained (1.24 eV) when the yttrium content reached 0.05 mol%.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• Bulletin of the Korean Chemical Society
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• v.10 no.1
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• pp.30-32
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• 1989

Traces of nine elements, gold, arsenic, cobalt, chromium, copper, europium, hafnium, sodium and antimony in commercially available silicon crystals were determined by the instrumental neutron activation analysis using the single comparator method. The values of the concentrations of these elements in both single and polycrystals were found to decrease significantly to a low limiting level by simply washing and etching surface contaminants having been introduced during various steps of sample preparation and irradiation. However, the chromium levels in polycrystals were not easily decreased, these depending upon the cutting tools employed. The Sb-doped content in each semiconductor has been compared with the associated quantities such as the concentration and the conductivity range given by the sample donor. Uncertainty in the sodium analysis due to the fission neutron reaction by silicon itself was discussed.

• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.30-32
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• 1992

The apparent depth of space charge region on the ZnO $(10{\bar{1}}0)$ surface in chemisorption of oxygen has been estimated from the capacitance of two contacting faces. When the sample (donor concentration: $2.4{\times}10^{22}\;m^{-3}$) was evacuated at 773 K for 1 hr the depth reached to 40-100 ${\AA}$ depending on sample assembly. Admission of oxygen to the sample resulted in an increase of the depth to 3600 ${\AA}$ where the increment was greater at higher oxygen pressure between 6.6-1600 $N/m^2$. Admission of CO to the sample previously exposed to oxygen yields a decrease in the depth. The results of the measurement support that oxygen is adsorbed as an acceptor on ZnO $(10{\bar{1}}0)$.

• Bulletin of the Korean Chemical Society
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• v.9 no.4
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• pp.198-202
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• 1988

Several new palladium(II) complexes of aminophosphines, $(Pd(L)X_2)$, (L = $Ph_2PNH$ ++ $NR_2$; R = $CH_3(L_1)$, $C_2H_5(L_2)$ : X = Cl, Br, I, and NCS) that contain two different donor atoms of nitrogen and phosphorus as ${\pi}$-electron acceptor, were synthesized and characterized by conductivity measurement, ir, and UV/Vis-spectra. For the dithiocyanatopalladium(II) complexes with aminophosphines, it was confirmed that the thiocyanate group trans to phosphorus is coordinated as Pd-NCS mode and the one trans to nitrogen as Pd-SCN mode, and the aminophosphines form six-membered chelate ring. The spectra of dihalogenopalladium(II) complexes with aminophosphines show that the band maxima are shifted to the short wavelengths as the concentration is decreased.

• Current Applied Physics
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• v.18 no.12
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.