• Title/Summary/Keyword: Donor concentration

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Diffusion Kinetics of Si in GaAs and Related Defect Chemistry (GaAs에서의 Si의 확산기구와 그에 관련된 격자 결함 화학)

  • Lee, Gyeong-Ho
    • ETRI Journal
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    • v.11 no.4
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    • pp.75-83
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    • 1989
  • The diffusion mechanism of Si in GaAs was investigated using different diffusion sources based on the Si-Ga-As ternary phase equilibria. The Si profiles are measured with secondary ion mass spectrometry and differ significantly for sources taken from the different phase fields in the ternary phase diagram. Neutral As vacancy diffusion is proposed for acceptor Si diffusion anneals using a Ga - Si - GaAs source. Donor Si diffusion using As - rich sources and a Si -GaAs tie line source shows concentration dependent diffusion behavior. Concentration dependent diffusion coefficients of donor Si for As - rich source diffusion were found to be related to net ionized donor concentration and showed three regimes of different behavior: saturation regime, intermediate regime,and intrinsic regime. Ga vacancies are proposed to be responsible for donor Si diffusionin GaAs: $Si_Ga^+V_Ga^-$ (donor Si -acceptor Gavacancy) complex for the extrinsic regime and neutral $V_G$a, for the intrinsic regime.The Si - GaAs tie line source resulted in two branch profiles, intermediate between the As - rich and the Ga - rich source diffusion cases.

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Effects of Glycerin and PEG 400 in Donor and Receptor Solutions upon Skin Permeation of Drug (In vitro 경피흡수 실험시 Donor와 Receptor용액중의 글리세린과 PEG 400이 약물의 경피투과도에 미치는 영향)

  • Cho, Ae-Ri
    • Journal of Pharmaceutical Investigation
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    • v.26 no.2
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    • pp.99-103
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    • 1996
  • Effects of glycerin and PEG 400 in donor and receptor solutions upon skin permeation of drug were investigated. Deoxycortisone was used as a model compound. In vitro skin permeation study with freshly excised hairless mouse skin was performed and the steady-state skin permeation rates of the drug were determined in different fractions of glycerin or PEG 400 in donor and receptor solutions. Glycerin in donor solution didn't show any effect on the skin permeation rate of deoxycortisone. However glycerin in receptor solution showed significant effect on the skin permeation rate of the drug. In glycerin, there's a critical concentration for balancing hydration and dehydration of skin. At low concentration, less than 20 %, glycerin showed the enhancement of the flux due to the hydration effect of skin. At high concentration, more than 30 %, glycerin retard the permeation rate which might be due to the dehydration effect on the dermis layer. Since dermis has more water content than the stratum corneum, the steady state skin permeation rates were more influenced when glycerin was in receptor solution than that of in donor solution. PEG 400 aqueous solutions doesn't affect the steady state permeation rate of deoxycortisone significantly.

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Study for Energy Transfer from Rhodamine 6G to Malachite Green Using Time Correlated Single Photon Counting Method (시간상관 단일광자 계수법에의한 Rhodamine 6G에서 Malachite Green으로의 에너지 전달 연구)

  • Kim, Hyun-Soo;Eom, Hyo-Soon;Choi, Gyu-Kwan;Jeong, Hong-Sik;Kim, Ung
    • Korean Journal of Optics and Photonics
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    • v.2 no.4
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    • pp.203-208
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    • 1991
  • We investigated the nonradiative energy transfer process from Rhodamine 6G to Malachite Green in ethylen glycol solvent using time correlated single photon counting system equipped with a modelocked Ar ' laser. The reduced concentration and critical transfer distance for various acceptor concentration were obtained by using a full-fitting analysis of the fluorescence decay curves. We found that Huber model is more suitable than Forster model and the influence of energy migration through the dipole-dipole interaction becomes more significant for the low acceptor concentrations relative to the donor concentration($5\times 10^4$mol/l).

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Semiconductive Properties of Passivating TiO2 Film as Photoanode (광전극으로서 TiO2 부동태 피막의 반도체 성질에 대한 연구)

  • Kim, Chang-Ha;Pyun, Su-Il
    • Journal of Hydrogen and New Energy
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    • v.1 no.1
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    • pp.48-54
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    • 1989
  • Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

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The effect of sintering temperature on the electrical properties of ZnO ceramics (ZnO세라믹스의 소결온도가 전기적 특성에 미치는 영향)

  • 김용혁;이덕출
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.40-47
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    • 1995
  • Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

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The Mg Solid Solution far the P-type Activation of GaN Thin Films Grown by Metal-Organic Chemical Vapor Deposition

  • Kim, KeungJoo;Chung, SangJo
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.24-29
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    • 2001
  • GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

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Effect of the Deep Donor Level on the Interface Electron Density ($Al_xGa_{1-x}As$-GaAs 이종접합에서 deep donor level 이 interface electron density에 미치는 영향)

  • Nam, Seaung-Hyun;Jung, Hak-Kee;Lee, Moon-Key;Kim, Bong-Ryul
    • Proceedings of the KIEE Conference
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    • 1987.07a
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    • pp.465-468
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    • 1987
  • This paper describes a model to calculate the equilibrium electron density of MODFET at the interface that takes into account the simultaneous shallow and deep level in the Al-GaAs layer. In the present study we have made an investigation of the interface electron density with different values of the AlGaAs doping density and spacer layer thickness, considering simultaneously two doner levels. In this case, the ratio of the shallow to the deep donor concentraction is considered. From the comparison with early experimental results we could find the deep level and that the deep donor concentration is about 50% with the Al mole fraction X ${\sim}0.3$, activation energy Edx=65meV, temperature $77^{\circ}K$ and spacer thickness range $50A{\sim}100A$. Also we have investigated the effect of the temperature. As temperature increase, at critical mole fraction X the nature of the donor concentration changes from $\Gamma$ to L and X.

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Electrical Conductivity of Donor Doped $BaTiO_3$ (Donor형 불순물로 치환시킨 $BaTiO_3$)

  • Lee, Sang-Beom;Lee, Hyun-Hee
    • The Journal of Natural Sciences
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    • v.13 no.1
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    • pp.51-63
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    • 2003
  • The investigation of the electrical conductivities donor doped $BaTiO_3$at isothermal temperature 700K and 1200K as a function of the oxygen partial press between I and $10^{-20}$atm yields evidence concerning the kind of defects. The position of the minimum conductivity is moved in some orders of magnitude with increasing of donor contents when comparing that of the pure $BaTiO_3$. The conductivity for all the samples with various concentration of donor blends into a same value and the conduction properties become independent of donor contents at very oxygen pratial pressure. This indicates that the reduction has become the major source of defects.

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The Effect of Sb2O3 Additive on the Electrical Properties of ZnO Varistor (Sb2O3 첨가제가 ZnO 배리스터의 전기적 특성에 미치는 영향)

  • Kim, Yong-Hyuk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.10
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    • pp.1697-1701
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    • 2016
  • The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

Effect of electron donor for reductive dechlorination of PCE using biobarrier (Biobarrier를 이용한 PCE의 환원적 탈염소화시 전자공여체의 영향)

  • 황보현욱;신원식;김영훈;송동익
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2003.09a
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    • pp.391-394
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    • 2003
  • The applicability of in situ microbial filter or biobarrier technology for the remediation of soil and groundwater contaminated with chlorinated solvents was investigated. The efficiency and rates of reductive dechlorination of chlorinated solvents are known to be highly dependent on hydrogen concentration. In this study, the effect of electron donors on the reductive dechlorination of PCE was investigated using vermicompost (worm casting) and peat as permeable reactive barrier medium The effect of organic acids (lactate, butyrate and benzoate), yeast extract and vitamin $B_{l2}$ on the reductive dechlorination was investigated. Compared to the control (no electron donor added), addition of electron donors stimulated the dechlorinated rate. Among the electron donor treatments, lactate/benzoate amendment exhibited the highest dechlorination rate. Since vermicompost and peat are inexpensive and biodegradable and have high sorption capacity, they could be successfully used as biobarrier media, especially when electron donors (for example, lactate/benzoate) are added.d.

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