• Title/Summary/Keyword: Display Design

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Optical Configurations for an Achromatic Transflective Liquid Crystal Cell

  • Lee, Gak-Seok;Kim, Jae-Chang;Yoon, Tae-Hoon;Kim, Young-Sik;Kang, Tae-Hoon;Kang, In-Byeong
    • Journal of Information Display
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    • v.7 no.1
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    • pp.19-24
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    • 2006
  • We propose optical configurations of a double-cellgap liquid crystal cell for transflective displays with wide viewing angle and high contrast ratio. The reflective part is designed in the wide-band quarter wave structure to achieve good dark state. For the transmissive part, the compensation method is applied to achieve the super-achromatic dark state, and three switching methods are used : which are vertical switching, horizontal switching to $30^{\circ}$and horizontal switching to $120^{\circ}$, to achieve the bright state.

A Novel Design of Low Noise On-panel TFT Gate Driver

  • Deng, Er Lang;Shiau, Miin Shyue;Huang, Nan Xiong;Liu, Don Gey
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1305-1308
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    • 2008
  • In this study, we redesigned the reliable integrated on-panel display gate driver that was equipped with dual pull-down as well as controlled discharge-path structure to reduce the high voltage stress effect and realized with TSMC 0.35 um CMOS-based technology before. An improved discharge path and a low noise design are proposed for our new a-Si TFT process implementation. Our novel reliable gate driver design can make each cell of shift register to be insensitive to the coupling noise of that stage.

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Source-Follower Type Analog Buffer Using Low Temperature Poly-Si TFTs for AMLCDs

  • Chen, Bo-Ting;Tai, Ya-Hsiang;Wei, Ying-Jyun;Tsai, Chun-Chien;Chen, Hsu-Hsin;Huang, Chun-Yao;Kuo, Yu-Ju;Cheng, Huang-Chung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1243-1246
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    • 2006
  • A new source follower circuit for the integrated circuit of AMLCDs is proposed. Active load is added and calibration operation is applied to compensate the circuits. Proposed circuit is capable of minimizing the variation from both timing and device variations through measured results, the uniformity and bias effect are discussed.

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Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition

  • You Yil-Hwan;Kim Jung-Seok;Hwang Jin-Ha
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1 s.14
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    • pp.51-55
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    • 2006
  • MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.

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Effect of Process Parameters on Surface Roughness in Lapping Operation (래핑의 공정변수가 표면거칠기에 미치는 영향)

  • Choi, Mansung
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.4
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    • pp.9-13
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    • 2013
  • Lapping is a very complicated and random process resulting from the variation of abrasive grains in its sizes and shapes and from the numerous factors having an effect on the process quality. This paper presents a study of a $2^4$ full factorial experimental design and analysis to optimize surface quality in lapping operation. The optimization of the factors to obtain minimum surface roughness was carried out by incorporating effect plots, main effect plots, interaction plots, analysis of variance(ANOVA), surface plots, and contour plots. The statistical design experiments, designed to reduce the total number of experiments required, indicated that, within the selected conditions, all the parameters influenced at a significance level of 5%. In addition, some of the possible interactions between these parameters also influenced the lapping process, especially those that were of third order. A regression model was suggested and fitted the experimental data very well.

A Novel Energy Recovery Sustaining Driver with Snubber Circuits for Plasma Display Panel

  • Chen, Jyh-Wei;Lee, Chin-Yuan;Lu, Chien-Hung;Wang, Ssu-Hao;Hsia, Yi-Feng;Chang, Wei-Chun;Mo, Chi-Neng;Liu, Chia-Lin;Yang, Sung-Tse
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.635-638
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    • 2005
  • An energy recovery sustaining driver with zero current switching to reduce switching losses and EMI is presented in this paper. The driver with designed snubber circuits reduces ringing voltage significantly on PDP so that the voltage rating of MOSFETs can be lower as well to reduce the cost of switches.

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Design of Diffraction Limited Head Mounted Display Optical System Based on High Efficiency Diffractive Elements

  • Tehrani, Masoud Kavosh;Fard, Sayed Sajjad Mousavi
    • Current Optics and Photonics
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    • v.1 no.2
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    • pp.150-156
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    • 2017
  • A diffraction limited optical system for head mounted displays (HMDs) was designed. This optical system consists of four modules, including 1:5 mm and 5:30 mm beam expanders, polarization grating-polarization conversion system (PG-PCS) and refractive/diffractive projection optical module. The PG-PCS module transforms the unpolarized Gaussian beam to a linearly polarized beam and it simultaneously homogenizes the spatial intensity profile. The optical projector module has a $30^{\circ}$ field of view, a 22 mm eye relief, and a 10 mm exit pupil diameter with a compact structure. Common acrylic materials were utilized in the optical design process; therefore, the final optical system was lightweight. The whole optical system is suitable for a 0.7 inch liquid crystal on silicon microdisplay (LCOS) with HDTV resolution ($1920{\times}1080$) and $8.0{\mu}m$ pixel pitch.

Development of Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design (VIP-SEPCAD) (플라즈마 챔버의 특성 분석 및 최적 설계를 위한 가상의 시뮬레이션 환경 개발)

  • 김헌창;설용태
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.4
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    • pp.9-12
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    • 2003
  • This paper describes a newly developed simulation environment for analysis and design of a plasma processing chamber based on first principles including complicated physical and chemical interactions of plasma, fluid dynamics of neutrals, and transport phenomena of particles. Capabilities of our simulator, named VIP-SEPCAD (Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design), are demonstrated through a two dimensional simulation of an oxygen plasma chamber. VIP-SEPCAD can provide plasma properties such as spatiotemporal profiles of plasma density and potential, electron temperature, ion flux and energy, etc. By coupling neutral and particle transport models with a three moment plasma model, VIP-SEPCAD can also predict spatiotemporal profiles of chemically reactive species and particles exist in plasma.

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Effect of Alternating Magnetic Field on Ion Activation in Low Temperature Polycrystalline Silicon Technology

  • Hwang, Jin Ha;Lim, Tae Hyung
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.1
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    • pp.35-39
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    • 2004
  • Statistical design of experiments was successfully employed to investigate the effect of alternating magnetic field on activation of polycrystalline Si (p-Si) doped as n-type using $\textrm{PH}_3$, by full factorial design of three factors with two levels. In this design, the input variables are graphite size, alternating current, and activation time. The output parameter, sheet resistance, is analyzed in terms of the primary effects and multi-factor interactions. Notably, the three-factor interaction is calculated to be a dominant interaction. The interaction between graphite size and activation time and the main effect of current are important effects compared to the other variables and relevant interactions. Alternating magnetic flux activation is proved a significantly beneficial processing technique.

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A Dynamic Structural Design of PC type Sub-Structure for Next-Generation FAB based on Dynamic Test and Simulation (차세대 반도체 FAB의 동적 구조 설계를 위한 PC형 격자보 구조물의 동적 특성 평가)

  • 전종균;김강부;손성완;이홍기
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.4
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    • pp.51-55
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    • 2004
  • In the design stage of high precision manufacturing/inspection FAB facilities, it is necessary to investigate the allowable vibration limits of high precision equipments and to study structural dynamic characteristics of C/R and Sub-structure in order to provide structural vibration criteria to satisfy these allowable limits. The goal of this study is to investigate the dynamic characteristics of PC-Type mock-up structures designed for next generation TFT-LCD FAB through experiments and analysis procedures. Therefore, in order to provide a proper dynamic structural design for high precision manufacturing/inspection work process, these allowable limits must be satisfied.

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