• 한국진공학회지
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• 제4권S2호
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• pp.90-94
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• 1995

Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.

• 한국결정성장학회지
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• 제15권2호
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• pp.45-50
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• 2005

규소 표면의 기계적 손상은 산화 공정 중에 규소 표면에 여러 가지 형태의 결함들을 발생 시킨다. 규소 표면에 손상을 주는 마모 입자가 커짐에 따라 OISF보다는 etch pit의 형상이 동굴형인 선 결함(line defects)들이 많이 발생된다. 이들 결함들은 실리콘 결정을 성장시키는 단계에서 형성되는 결함들과는 상호 관련이 없다. 방향성 응고법으로 성장된 규소 결정속에 존재하는 결함들은 주로 twin과 stacking fault들이며 응고과정에서 발생이 예상되는 응력에 의한 전위는 거의 발견되지 않았다. 따라서 Czochralski 법으로 성장된 단 결정 규소뿐 아니라 방향성 응고법으로 성장된 다 결정 규소 기판도 표면의 결함들을 이용하여 extrinsic gettering을 통한 규소 결정 내부의 불순물 제거의 가능성이 높다.

• 한국재료학회지
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• 제16권4호
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• pp.241-247
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• 2006

Structural studies have been performed on precipitation hardening discovered in $L1_2-ordered\;Ni_3(Al,Cr)$ containing 0.2 to 3.0 mol% of carbon using transmission electron microscopy (TEM). Fine octahedral precipitates of $M_{23}C_6$ appeared in the matrix by aging at temperatures around 973 K after solution treatment at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After prolonged aging or by aging at higher temperatures, the $M_{23}C_6$ precipitates then adopt a rod-like morphology elongated parallel to the <100> directions. Deformation at temperature below 973 K, typical Orowan loops were observed surrounding the $M_{23}C_6$ particles. At higher deformation temperatures, the Orowan loops disappeared and the morphology of dislocations at the particle-matrix interfaces suggested the existence of attractive interaction between dislocations and particles. The change of the interaction modes between dislocation and particles with increasing deformation temperature can be considered as a result of strain relaxation at the interface between matrix and particles.

• 한국결정성장학회지
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• 제9권4호
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• 한국결정성장학회지
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• 제9권5호
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• pp.504-509
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• 1999

In-situ cleaning and subsequent silicon epitaxial film growth were performed in a load-locked reactor equipped with Hg-grid UV lamp and PBN heater to obtain the smooth and contaminant-free underlying surface and develop low-temperature epitaxial film growth process. The removals of organic and native oxide were investigated using UV-excited $O_2$ and $NF_{3}/H_{2}$, and the effect of the surface condition was examined on the quality of silicon epitaxial film grown at temperature as low as $750^{\circ}C$. UV-excited gas phase cleaning was found to be effective in removing the organic and native oxide successfully providing a smooth surface with RMS roughness of 0.5$\AA$ at optimal condition. Crystalline quality of epitaxial film was determined by smoothness of cleaned surface and the presence of native oxide and impurity. Crystalline defects such as dislocation loops or voids due to the surface roughness were observed by XTEM.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2298-2304
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• 2023

Titanium alloys are expected to become one of the candidate materials for nuclear-powered spacecraft due to their excellent overall performance. Nevertheless, atomistic mechanisms of the defect accumulation and evolution of the materials due to long-term exposure to irradiation remain scarcely understood by far. Here we investigate the heavy irradiation damage in a-titanium with a dose as high as 4.0 canonical displacements per atom (cDPA) using atomistic simulations of Frenkel pair accumulation. Results show that the content of surviving defects increases sharply before 0.04 cDPA and then decreases slowly to stabilize, exhibiting a strong correlation with the system energy. Under the current simulation conditions, the defect clustering fraction may be not directly dependent on the irradiation dose. Compared to vacancies, interstitials are more likely to form clusters, which may further cause the formation of 1/3<1210> interstitial-type dislocation loops extended along the (1010) plane. This study provides an important insight into the understanding of the irradiation damage behaviors for titanium.

• Nuclear Engineering and Technology
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• 제56권4호
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• pp.1490-1500
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• 2024

Helium-induced defect nucleation and accumulation in polycrystalline W and W0.5 wt%ZrC (W0.5ZrC) were studied in-situ using the transmission electron microscopy (TEM) combined with 40 keV He⁺ irradiation at 800 and 1000℃ at the maximum damage level of 1 dpa. Radiation-induced dislocation loops were not observed in the current study. W0.5ZrC was found to be less susceptible to irradiation damage in terms of helium bubble formation and growth, especially at lower temperature (800 ℃) when vacancies were less mobile. The ZrC particles present in the W matrix pin the forming helium bubbles via interaction between C atom and neighbouring W atom at vacancies. This reduces the capability of helium to trap a vacancy which is required to form the bubble core and, as a consequence, delays, the bubble nucleation. At 1000 ℃, significant bubble growth occurred in both materials and all the present bubbles transitioned from spherical to faceted shape, whereas at 800 ℃, the faceted helium bubble population was dominated in W.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• 공업화학
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• 제31권4호
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• pp.347-351
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• 2020

재료는 방사선과 상호작용을 통해 그 물리적, 화학적 특성이 변화하며 여러 방사선 중에서 전하를 띄고 있지 않아 침투깊이가 깊은 중성자 조사에 의한 금속소재의 조사손상은 원자력발전소의 안전과 관련해서 오랜 기간 동안 집중적인 연구대상이었다. 중성자 조사에 의한 조사손상은 초반 피코 초 스케일에서 벌어지는 원자단위의 점결함의 생성으로 시작되며 그 이후의 전개 양상은 전위 고리나 공극과 같은 미세구조상 결함으로 확인될 수 있다. 이러한 미세구조 상 결함의 형상과 분포에 따라 소재의 특성에 미치는 효과는 상이하게 된다. 그러므로 중성자 조건에 따른 미세구조를 예측하는 것은 매우 중요한 일로, 본 논문에서는 중성자 조사에 의한 재료 내의 미세구조 발달에 대해 리뷰한 뒤 조사된 소재의 미세구조 변화 예측에 널리 사용될 수 있는 상장 모델에 대해 간략히 소개하였다.

• 센서학회지
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• 제5권1호
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• pp.57-62
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• 1996

하이퍼어브��트 접합구조의 $p^{+}n$ 다이오드의 누설전류를 감소시키기 위하여 $3000{\AA}$ 두께의 다결정 실리콘을 다이오드의 상층부에 증착하여 $900^{\circ}C$, $N_{2}$ 분위기에서 30분간 어닐링하였다. 다결정 실리콘 유무 및 n 확산층의 불순물 종류에 따른 다이오드의 누설전류 특성을 조사하였으며, 다결정 실리콘을 사용하였을 때 누설전류의 크기를 약 $\frac{1}{1000}$배 감소시킬 수 있었다. TEM 분석을 통하여 활성화 영역에 존재하였던 많은 전위 루프들이 그 표면 위에 다결정 실리콘을 사용함으로써 제거됨을 알 수 있었다. 그리고 이 결함들은 As의 이온주입에 의한 n 확산층에 의해 유발됨을 알 수 있었다.