• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.17-17
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• 1997

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제6권2호
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• pp.194-202
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• 1996

Transmission electron microscopy has been used to characterize the dislocation structure in hot-pressed titanium diboride. The thin foil samples were prepared by the conventional ion beam thinning technique and reveal the main features associated with the dislocations ; low-angle grain boundaries with dislocation arrays, high-angle grain boundaries with ledges/steps on the boundary planes. The ledges/steps on the grain boundaries were characterized as the origin of defect structures such as dislocation formation or crack propagation near grain boundaries. A fraction of the high angle grain boundaries contained periodic arrays of grain boundary dislocations. The Burger's vectors of the dislocations in the $TiB_{2}$specimens were determined.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.428-429
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• 2011

Recently, we performed ab initio total energy calculation and tight-binding molecular dynamics (TBMD) simulation to study structures and the reconstruction of native defects in graphene. In the previous study, we predicted by TBMD simulation that a double vacancy in graphene is reconstructed into a 555-777 composed of triple pentagons and triple heptagons [1]. The structural change from pentagon-octagon-pentagon (5-8-5) to 555-777 has been confirmed by recent experiments [2,3] and the detail of the reconstruction process is carefully studied by ab initio calculation. Pentagon-heptagon (5-7) pairs are also found to play an important role in the reconstruction of vacancy in graphene and single wall carbon nanotube [4]. In the TBMD simulation of graphene nanoribbon (GNR), we found the evaporation of carbon atoms from both the zigzag and armchair edges is preceded by the formation of heptagon rings, which serve as a gateway for carbon atoms to escape. In the simulation for a GNR armchair-zigzag-armchair junction, carbon atoms are evaporated row-by-row from the outermost row of the zigzag edge [5], which is in excellent agreement with recent experiments [2, 6]. We also present the recent results on the formation and development of dislocation in graphene. It is found that the coalescence of 5-7 pairs with vacancy defects develops dislocation in graphene and induces the separation of two 5-7 pairs. Our TBMD simulations also show that adatoms are ejected and evaporated from graphene surface due to large strain around 5-7 pairs. It is observed that an adatom wanders on the graphene surface and helps non-hexagonal rings change into stable hexagonal rings before its evaporation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제11권5호
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• pp.358-364
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• 1998

Retrograde well is a new process for ULSI fabrication. High energy ion implantation has been used for retrograde well formation. In this paper the forming condition for retrograde well using high energy ion implantation is compared with that for conventional well. TW signals for retrograde p-,n-well($900^{\circ}C$),after annealing are similar trends to those of conventional ones($1150^{\circ}C$), however the signals for RTA have the highest value because of small thermal budget. Junction depths of retrograde well are varied from about 1.2 to $3.0\{mu}m$ as for conventional well. The peak concentrations of retrograde well, however, are about 10 times higher in values than those of conventional ones so that they can be used as any types of potential barriers or gettering sites. The critical dose for phosphorus implantation in our experiments is between $3\times10^{13} and 1\times10^{14}/cm^2$. Under the above critical dose, there are many secondary defects near projected range such as dislocation lines and dislocation loops.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제16권2호
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• pp.66-70
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• 2006

Various kind of structural defects are observed to be present on the oxidized surface of the silicon crystal which was previously damaged mechanically. The formation of such defects was found to depend on the amount of damage induced and the temperature of thermal oxidation. It was confirmed by the measurement of minority carrier life time that gettering capability decreases as the size of the defects increase. The strained layer which is formed due to smaller amount of damage or lower oxidation temperature believed to has higher capability of gettering over defects like dislocation loops or stacking faults.

• Korean Journal of Materials Research
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• 제19권12호
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.

• Journal of the Korean Society for Heat Treatment
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• 제32권2호
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• pp.61-67
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• 2019

This study was carried out to investigate the effect of thermo-mechanical treatment on the tensile properties of Fe-20Mn-12Cr-3Ni-3Si alloy with deformation induced martensite transformation. ${\alpha}^{\prime}$ and ${\varepsilon}$-martensite, dislocation, stacking fault were formed, and grain size was refined by thermo-mechanical treatment. With the increasing cycle number of thermo-mechanical treatment, volume fraction of ${\varepsilon}$ and ${\alpha}^{\prime}$-martensite, dislocation, stacking fault were increased, and grain size decreased. In 5-cycle number thermo-mechanical treated specimens, more than 10% of the volume fraction of ${\varepsilon}$-martensite and less than 3% of the volume fraction of ${\alpha}^{\prime}$-martensite were attained. Tensile strength was increased and elongation was decreased with the increasing cycle number of thermo-mechanical treatment. Tensile properties of thermo-mechanical treated alloy with deformation induced martensite transformation was affected to formation of martensite by thermo-mechanical treatment, but was large affected to increasing of dislocation and grain refining.

• Nuclear Engineering and Technology
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• 제54권3호
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• pp.991-996
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• 2022

Microstructures of monolithic high purity SiC and SiC with sintering additives after neutron irradiation to a fluence of 2.0-2.5 × 10²⁴ n/m² (E > 0.1 MeV) at 333-363 K and after post-irradiation annealing up to 1673 K were observed using a transmission electron microscopy. Results showed that no black spot defects or dislocation loops in SiC grains were found after the neutron irradiation for all of the specimens owing to the moderate fluence at low irradiation temperature. Thus, it is confirmed that these specimens were swelled mostly by the formation of point defects. Black spots and small dislocation loops were discovered only after the annealing process in PureBeta-SiC and CVD-SiC, where the swelling almost diminished. Anomalous-shaped YAG grains were found in SiC ceramics containing sintering additives. These grains contained dense black spots defects and might lose crystallinity after the neutron irradiation, while these defects may annihilate by recrystallization during annealing up to 1673 K. Amorphous grain boundary phase was also presented in this ceramic, and a large part of it was crystallized through post-irradiation annealing and could affect their recovery behavior.

• Applied Microscopy
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• 제24권4호
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Economic and Environmental Geology
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• 제30권2호
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• pp.143-151
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• 1997

The history of the Palgongsan Fault comprises the growth-fault, the dormant and the strike-slip phases. Dissecting the Palgongsan Granite, the Palgongsan Strike-slip Fault, which is the product of the final phase, sinistrally offset about 5.5 km as shown in the dislocation of the Hasandong Formation. Faulting, sedimentation and igneous activity were inter-related in the early phases of the Palgongsan Fault. Some other faults such as the Dansan Pond Fault and the Hayang Fault have also been discovered, and their some stratigraphic implications and the ages of faulting are discussed. The anomalous development of the Jindong Formation in the study area and the related stratigraphic problems are discussed. It has been confirmed that the Konchonri Formation deposited over the Chaeyaksan Volcanic Formation in spite of the recent doubts on their such stratigraphic relation. The chronological sequence of the volcanisms of the Kyongsang Basin has been summarized.