• Transactions of Materials Processing
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• v.13 no.2
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• pp.160-167
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• 2004

In order to theoretically analyze the creep behavior of high Cr steel at $600^{\circ}C$, a unified elasto-viscoplastic constitutive model based on the consideration of dislocation density is proposed. A combination of a kinetic equation describing the mechanical response of a material at a given microstructure in terms of dislocation glide and evolution equations for internal variables characterizing the microstructure provides the constitutive equations of the model. Microstructural features of the material such as the grain size and spacing between second phase particles are directly implemented in the constitutive equations. The internal variables are associated with the total dislocation density in a simple model. The model has a modular structure and can be adjusted to describe a creep behavior using the material parameters obtained from uniaxial tensile tests.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.207-210
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• 2004

The deformation behavior of copper during equal channel angular pressing (ECAP) was calculated using a three-dimensional version of a constitutive model based on the dislocation density evolution. Finite element simulations of the variation of the dislocation density and the dislocation cell size with the number of ECAP passes are reported. The calculated stress, strain and cell size are compared with the experimental data for Cu deformed by ECAP in a modified Route C regime. The results of FEM analysis were found to be in good agreement with the experiments. After a rapid initial decrease down to about 200 nm in the first ECAP pass, the average cell size was found to change little with further passes. Similarly, the strength increased steeply after the first pass, but tended to saturate with further pressings. The FEM simulations also showed strain non-uniformities and the dependence of the resulting strength on the location within the workpiece.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2002.05a
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• pp.129-132
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• 2002

A unified elastic-viscoplastic ocnstitutive model based on dislocation density considerations is described. A combination of a kinetic equation, which describes the mechanical response of a material at a given microstructure in terms of dislocation glide and evolution equations for internal variables characterizing the microstructure provide the constitutive equations of the Model. Microstructural features of the material, such as the grain size, spacing between second phase particles etc., are directly implemented in the constitutive equations. The internal variables are associated with the total dislocation density in the simple version of the model. The model has a modular structure and can be adjusted to describe a particular type of metal forming processes.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.699-706
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• 2009

Deformation behavior of pure aluminum during equal channel angular pressing (ECAP) was simulated using a three-dimensional version of the finite element method in conjunction with a constitutive model based on the dislocation density and cell evolution. The three-dimensional finite element analyses for the prediction of microstructural features, such as the variation of the dislocation density and the cell size with the number of ECAP, are reported. The calculated stress and strain and their distributions are also investigated for the route Bc ECAP processed pure aluminum. The results of finite element analyses are found to be in good agreement with experimental results for the dislocation cell size. Due to the accumulation of strain throughout the workpiece and an overall trend to saturation in cell size, a decrease of the difference in cell size with the number of passes (1~4) was predicted.

• Transactions of Materials Processing
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• v.15 no.6 s.87
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• pp.441-444
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• 2006

The deformation behavior of copper during equal channel angular pressing(ECAP) was calculated using a three-dimensional version of a constitutive model based on the dislocation density evolution. Finite element simulations of the variation of the dislocation density and the dislocation cell size with the number of ECAP passes are reported. The calculated stress, strain and cell size are compared with the experimental data for Cu deformed by ECAP in a modified Route C regime. The results of FEM analysis were found to be in good agreement with the experiments. After a rapid initial decrease down to about 200nm in the first ECAP pass, the average cell size was found to change little with further passes. Similarly, the strength increased steeply after the first pass, but tended to saturate with further pressings. The FEM simulations also showed strain non-uniformities and the dependence of the resulting strength on the location within the workpiece.

• Transactions of Materials Processing
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• v.22 no.8
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• pp.450-455
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• 2013

In the current study, a new dynamic recrystallization model for predicting high temperature flow stress is developed based on a physical model and the mean field theory. In the model, the grain aggregate is assumed as a representative volume element to describe dynamic recrystallization. The flow stress and microstructure during dynamic recrystallization were calculated using three sub-models for work hardening, for nucleation and for growth. In the case of work hardening, a single parameter dislocation density model was used to calculate change of dislocation density and stress in the grains. For modeling nucleation, the nucleation criterion developed was based on the grain boundary bulge mechanism and a constant nucleation rate was assumed. Conventional rate theory was used for describing growth. The flow stress behavior of pure copper was investigated using the model and compared with experimental findings. Simulated results by cellular automata were used for validating the model.

• Journal of Powder Materials
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• v.11 no.4
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• pp.341-347
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• 2004

In the study, a hybrid constitutive model for densification of metallic powders was applied to cold isostatic pressing. The model is based on a pressure-dependent plasticity model for porous materials combined with a dislocation density-based viscoplastic constitutive model considering microstructural features such as grain size and inter-particle spacing. Comparison of experiment and calculated results of microscale and nanoscale Cu powders was made. This theoretical approach is useful for powder densification analysis of various powder sizes, deformation routes and powder processing methods.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.11a
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• pp.30-30
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• 2000

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.81-89
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• 2015

A strain-gradient crystal plasticity constitutive model was developed in order to predict the Hall-Petch behavior of a Ni-base polycrystalline superalloy. The constitutive model involves statistically stored dislocation and geometrically necessary dislocation densities, which were incorporated into the Bailey-Hirsch type flow stress equation with six strength interaction coefficients. A strain-gradient term (called slip-system lattice incompatibility) developed by Acharya was used to calculate the geometrically necessary dislocation density. The description of Kocks-Argon-Ashby type thermally activated strain rate was also used to represent the shear rate of an individual slip system. The constitutive model was implemented in a user material subroutine for crystal plasticity finite element method simulations. The grain size dependence of the flow stress (viz., the Hall-Petch behavior) was predicted for a Ni-base polycrystalline superalloy NIMONIC PE16. Simulation results showed that the present constitutive model fairly reasonably predicts 0.2%-offset yield stresses in a limited range of the grain size.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.43-46
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• 1997

High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.