• Title/Summary/Keyword: Direct current(DC) sputtering

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I-V Properties OLED by CMP Process (CMP 공정을 적용한 유기발광소자의 전압.전류 특성)

  • Choi, Gwon-Woo;Lee, Woo-Sun;Jun, Young-Kil;Jueng, Pan-Gum;Seo, Yong-Jin
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1357-1358
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    • 2006
  • Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

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Post Deposition Annealing Effect on the Structural, Electrical and Optical Properties of ZnO/Ag/ZnO Thin Films

  • Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.25 no.2
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    • pp.85-89
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    • 2012
  • Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

Preparation of sputter-deposited CuOx thin film with p-type conductivity and application as thin film transistor

  • So Jeong Park;Eui-Jung Yun
    • Journal of the Korean Physical Society
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    • v.81
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    • pp.867-875
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    • 2022
  • This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuOx) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu2O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu2O, was measured for samples prepared with an OP of 20%. In addition, only Cu+ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu2+ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu2O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuOx thin films could be constantly converted from n-type CuO to p-type Cu2O by decreasing the oxygen partial pressure. Thin film transistors with Cu2O deposited at 20% OP revealed p-type characteristics such as onset voltage (VON) of -3 V, saturated hole mobility of 8 cm2/Vs at VGS = -28 V, subthreshold swing of 0.86 V/decade at VGS-VON = -0.5 V, and on/off ratio of 1.14 × 103.

The Study of Sputtered SiGe Thin Film Growth for Photo-detector Application (광검출기 응용을 위하여 스퍼터된 미세결정 SiGe 박막성장 연구)

  • Kim, Do-Young;Kim, Sun-Jo;Kim, Hyung-Jun;Han, Sang-Youn;Song, Jun-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.6
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    • pp.439-444
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    • 2012
  • For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

A Study of Characteristic based on Working Pressure of ITO Electrode for Display (디스플레이용 ITO 전극의 동작 압력에 따른 특성 연구)

  • Kim, Hae-Mun;Park, Hyung-Jun
    • Journal of IKEEE
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    • v.20 no.4
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    • pp.392-397
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    • 2016
  • In this paper, Characteristics of the ITO thin film deposited were analyzed using DC magnetron sputtering in order to investigate the deposition conditions of ITO thin film for transparent electrode. The experiment conditions were atmospheric pressure from 1 to 3[mTorr] with 1 [mTorr] step, bias electric voltage ranged from 260[V] to 330[V] with 10[V] step. The transmittance, refractive index and surface and cross-sectional shape of the deposited thin film were measured with an UV.-VIS. spectrophotometer, ellipsometer and SEM. Such condition as 1~2[mTorr] and near 300[V] voltage the transmittance was over 90[%] and the refractive index more than 2. Therefore, it was confirmed that the appropriate condition for making a highly transparent conductive electrode.

Morphological Structural and Electrical Properties of DC Magnetron Sputtered Mo Thin Films for Solar Cell Application

  • Fan, Rong;Jung, Sung-Hee;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.389-389
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    • 2012
  • Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

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Effect of Post-deposition Rapid Thermal Annealing on the Electrical and Optical Properties of ZTO/Ag/ZTO Tri-layer Thin Films (급속열처리에 따른 ZTO/Ag/ZTO 박막의 전기적, 광학적 특성 개선 효과)

  • Song, Young-Hwan;Eom, Tae-Young;Heo, Sung-Bo;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.30 no.4
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    • pp.151-155
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    • 2017
  • The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

Effect of Ti Buffer Layer Thickness on the Electrical and Optical Properties of In2O3/Ti bi-layered Films (Ti 완충층 두께에 따른 In2O3/Ti 적층박막의 전기적, 광학적 특성 변화)

  • Moon, Hyun-Joo;Jeon, Jae-Hyun;Gong, Tae-Kyung;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.28 no.6
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    • pp.296-299
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    • 2015
  • $In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{\times}10^{-4}{\Omega}^{-1}$ than that of the $In_2O_3$ single layer films ($2.6{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the $In_2O_3\;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

Influence of the Ag interlayer on the structural, optical, and electrical properties of ZTO/Ag/ ZTO films

  • Gong, Tae-Kyung;Moon, Hyun-Joo;Kim, Daeil
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.2
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    • pp.121-124
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    • 2016
  • ZnSnO3 (ZTO)/Ag/ ZnSnO3 (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1×10−2 Ω cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films.

Effect of oxalic acid solution to optimize texturing of the front layer of thin film sloar cells

  • Park, Hyeong-Sik;Jang, Gyeong-Su;Jo, Jae-Hyeon;An, Si-Hyeon;Jang, Ju-Yeon;Song, Gyu-Wan;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.401-401
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    • 2011
  • In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

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