• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.189-194
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• 2014

In this study, from a new x-ray detector that combines a columnar CsI:Na scintillation layer with a photosensitive mercuric iodide layer was investigated. In this structure, X-rays are converted into visible light on a thick CsI:Na layer, which is then converted to electric charges in a thin $HgI_2$ bottom layer. The thin coplanar mercuric iodide films as a photosensitive converter requiring only a few tens of volts of bias, associated with a thick columnar coating of phosphor layer, were simulated and designed. The results of this research suggest that the new coplanar x-ray detector with a hybrid-type structure can resolve the following problems: high voltage from the a-Se, and low conversion efficiency from the indirect conversion method. The results of this research suggest that the new CsI:Na/$HgI_2$ x-ray detector with a double-layer type structure can resolve the following problems: high voltage from the direct conversion method, and low conversion efficiency from the indirect conversion method.

• Korean Journal of Radiology
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• v.23 no.9
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• pp.854-865
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• 2022

Photon-counting detector (PCD) CT is a new CT technology utilizing a direct conversion X-ray detector, where incident X-ray photon energies are directly recorded as electronical signals. The design of the photon-counting detector itself facilitates improvements in spatial resolution (via smaller detector pixel design) and iodine signal (via count weighting) while still permitting multi-energy imaging. PCD-CT can eliminate electronic noise and reduce artifacts due to the use of energy thresholds. Improved dose efficiency is important for low dose CT and pediatric imaging. The ultra-high spatial resolution of PCD-CT design permits lower dose scanning for all body regions and is particularly helpful in identifying important imaging findings in thoracic and musculoskeletal CT. Improved iodine signal may be helpful for low contrast tasks in abdominal imaging. Virtual monoenergetic images and material classification will assist with numerous diagnostic tasks in abdominal, musculoskeletal, and cardiovascular imaging. Dual-source PCD-CT permits multi-energy CT images of the heart and coronary arteries at high temporal resolution. In this special review article, we review the clinical benefits of this technology across a wide variety of radiological subspecialties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.35-38
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• 2002

In this paper, for digital x-ray conversion receptor development studied by hybrid technology of based on CdZnTe. For this study, First searched fabricate method of CdZnTe x-ray receptor. Second, search the phosphor material & fabricate method for scintillator layer. Fabricated sample is analyzed with physical & electric measurement. This result is showed good SNR ratio hybrid thechnology with direct method & indirect method. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Nuclear Engineering and Technology
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• v.49 no.4
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• pp.776-780
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• 2017

To avoid imaging artifacts and interpretation mistakes, an improvement of the uniformity in gamma camera systems is a very important point. We can expect excellent uniformity using cadmium zinc telluride (CZT) photon counting detector (PCD) because of the direct conversion of the gamma rays energy into electrons. In addition, the uniformity performance such as integral uniformity (IU), differential uniformity (DU), scatter fraction (SF), and contrast-to-noise ratio (CNR) varies according to the energy window setting. In this study, we compared a PCD and conventional scintillation detector with respect to the energy windows (5%, 10%, 15%, and 20%) using a $^{99m}Tc$ gamma source with a Geant4 Application for Tomography Emission simulation tool. The gamma camera systems used in this work are a CZT PCD and NaI(Tl) conventional scintillation detector with a 1-mm thickness. According to the results, although the IU and DU results were improved with the energy window, the SF and CNR results deteriorated with the energy window. In particular, the uniformity for the PCD was higher than that of the conventional scintillation detector in all cases. In conclusion, our results demonstrated that the uniformity of the CZT PCD was higher than that of the conventional scintillation detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.384-387
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• 2003

In this paper, the evaluation of image quality was performed for digital radiography which is developing in using amorphous selenium as a photoconductor material for the purpose of offering basic research data and measurement technique about Medical Imaging Quality. So Modulation Transfer Function as a main factor of imaging quality evaluation was investigated by slit method. For measurement of MTF, Nuclear associates. 07-624 Slit camera image was obtained to study the variation of MTF corresponding to changing spatial frequency. And Presampling MTF was estimated by slit camera image with $10\;{\mu}m$ width at Digital Radiography. In this study, the obtained data demonstrates that the clinical value of a direct conversion type digital radiation detector using the amorphous selenium, which is being developed by domestic technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.328-328
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• 2007

Large area matrix-addressed image detectors are a recent technology for x-ray imaging with medical diagnostic and other applications. The imaging properties of x-ray pixel detectors depend on the quantum efficiency of x-rays, the generated signal of each x-ray photon and the distribution of the generated signal between pixels. In a phosphor coated detector the light signal is generated by electrons captured in the phosphor screen. In our study we simulated the lateral spread distributions for phosphor coupled detector by Monte Carlo simulations. Most simulations of such detectors simplify the setup by only taking the conversion layer into account neglecting behind. The Monte Carlo code MCNPX has been used to simulate the complete interaction and subsequent charge transport of x-ray radiation. This has allowed the analysis of charge sharing between pixel elements as an important limited factor of digital x-ray imaging system. The parameters are determined by lateral distribution of x-ray photons and x-ray induced electrons. The primary purpose of this study was to develop a design tool for the evaluation of geometry factor in the phosphor coupled optical imaging detector. In order to evaluate the spatial resolution for different phosphor material, phosphor geometry we have developed a simulation code. The developed code calculates the energy absorption and spatial distribution based on both the signal from the scintillating layer and the signal from direct detection of x-ray in the detector. We show that internal scattering contributes to the so-called spatial resolution drop of the image detector. Results from the simulation of spatial distribution in a phosphor pixel detector are presented. The spatial resolution can be increased by optimizing pixel size and phosphor thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.456-459
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• 2004

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater