• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.421-422
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.199-200
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.223-224
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• 2011

• 대한전자공학회논문지SD
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• 제45권11호
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• pp.8-12
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• 2008

AC PDP에 사용되는 ITO 전극의 공정시간을 단축시키고 생산성을 향상시키기 위해서 Nd:$YVO_4$ laser를 사용하여 ITO 전극 패턴을 하였다. ITO etchant를 사용하여 ITO 전극패턴을 형성한 샘플과 비교해서 laser를 사용하여 제작한 샘플은 ITO 라인 끝 부분에 shoulder와 물결무늬가 형성되었다. shoulder와 물결무늬의 제거를 위해서 laser의 펄스반복율과 스캔 속도에 변화를 주었다. 또한 shoulder와 물결무늬를 갖는 ITO 전극이 PDP에 주는 영향을 알아보기 위해서 방전특성분석을 하였다. 실험결과 40 kHz와 500 mm/s를 기본 조건으로 결정하였다. 본 실험을 통하여 레이저를 이용한 PDP용 ITO 전극막의 직접 패터닝 가능성을 확인할 수 있었다.

• 한국레이저가공학회지
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• 제3권2호
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.158-158
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• 2011

A wide range of techniques for the direct-printing of functional materials have been developed for the fabrication of micro- and nanoscale structures and devices. Here we report a new direct patterning method, liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sized as small as tens of nanometers over large areas up to 4". LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. The LB-nTM method was applied to the preparation of organic nanowire FETs on flexible substrates.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1806-1809
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• 2008

Study that form micro pattern by direct ink jet printing method is getting attention recently. Direct ink jet printing spout fine droplet including nano metal particle by force or air pressure. There is reason which ink jet printing method is profitable especially in a various micro-patterning technology. It can embody patterns directly without complex process such as mask manufacture or screen-printing for existent lithography. In this study, research of a technology that ejects fine droplet form of Pico liter and forms metal micro pattern was carried with inkjet head of piezoelectricity drive system. Droplet established pattern while ejecting consecutively and move on the surface at the fixed speed. Patterns formed in ink are mixed with organic solvent and polymer that act as binder. So added thermal hardening process after evaporate organic solvent at isothermal after printing. I executed high frequency special quality estimation of CPW transmission line to confirm electrical property of manufactured circuit board. We tried a large area printing to confirm application possibility of an ink jet technology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.583-588
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• 2005

Indium tin oxide (ITO) is a commonly used conducting transparent oxide film (CTO) used in flat panel display applications. Direct write laser ablation is sometimes employed for ITO patterning and it is important that the substrate material and remaining ITO be affected as little as possible by the laser ablation. In this investigation, femtosecond laser ablation of ITO was studied to identify laser processing parameters which cleanly ablated ITO with a minimum of damage to a glass substrate and surrounding ITO. The Ti:Sapphire chirp pulse amplified femtosecond laser used for the experiments had a wavelength of 775nm and produced pulses with a duration of 150fs at a rate of 2 kHz. Ablation was carried out at a sufficiently high panel scanning speed that single ablation spots could be studied. The pulse energy was adjusted to determine feasible spot diameters and depths which could be ablated into the ITO without damaging the glass substrate. Next, ablation of lines without glass damage was also demonstrated. Experiments were also performed with a high repetition rate (100kHz) femtosecond laser.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.