• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.103-109
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• 2010

An ink transfer is modeled and experimentally verified using roll-to-roll electric direct gravure printing process. The ink transfer model based on the physical mechanism for the maximum ink transfer rate is proposed, and experimented by the electric printing machine in FDRC for the relations of the maximum ink transfer rates to the printing pressure, the operating speed, the operating tension, the surface roughness of substrates, and the contact angle between substrate and silver ink. The free ink split coefficient and immobilized ink under the maximum ink transfer rate are calculated by the physical parameter in a printing process and contact angle between substrates and ink. Numerical simulations and experimental studies were carried out to verify performances of the proposed ink transfer model. Results showed that the proposed ink transfer model was effective for the prediction of the amount of transferred ink to the substrate in a direct gravure printing systems.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.203-208
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• 2007

Drying characteristics are confirmed by experiment to a printing machine which use Gravure ink or metal ink for an optimum design of direct radiation drying system room using NIR. As a result, Drying is easily accomplished in short distance and low moving speed in Gravure ink, but drying is dropped in metal ink because of oil. This confirmed that the development of water metal ink had to be proceeded to accomplish a perfect drying condition.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.3.1-3.1
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• 2011

Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.