• 대한화학회지
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• 제31권6호
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• pp.590-600
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• 1987

bis(p-chlorocarbonylphenyl)diphenylsilane (BCCDPS)과 pyromellitic dianhydride(PMDA) 및 몇가지의 디아민으로부터 실리콘을 함유하고 있는 폴리아미드-이미드를 합성하였다. 열중량분석기를 이용하여 합성한 중합체의 열적성질을 조사하였으며 Friedman 방법으로 중합체 열분해 반응의 활성화에너지를 구하였다. 중합체 분자내의 bis(p-carbonylphenyl)diphenylsilane units(BCDPS) 단위의 함량이 증가할수록 열안정성과 열분해 반응의 활성화에너지값은 감소하였으나 용매에 대한 용해성은 증가하였다.

• Bulletin of the Korean Chemical Society
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• 제33권3호
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• pp.993-996
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• 2012

We investigated fluorescence and fluorescence excitation of diphenylsilane (DPS) in a solution and molecular beams in combination with the aid of the DFT method. When the molecule was photoexcited at 250 nm in a cyclohexane solution, normal and excimer fluorescences were observed in the ranges of 260-320 and 330-450 nm, respectively. The fluorescence excitation spectrum indicates that the channel leading to the intramolecular excimer formation is not efficient in comparison with the normal fluorescence. Vibrationally resolved fluorescence excitation spectra were measured for the DPS molecules cooled in pulsed supersonic expansion of He in the range 262.2-271.7 nm, in which we can see several electronic excitation spectra exhibiting the electronic band origins. We found that the simulated absorption spectrum based on the time-dependent densityfunctional theory calculations accords well with the absorption spectrum.

• Bulletin of the Korean Chemical Society
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• 제20권6호
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• pp.677-682
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• 1999

Conjugated polycarbosilanes with diacetylene and aromatic groups of thiophene or phenylene simultaneously present in the polymer backbone such as poly[[1,4-bis(thiophenyl)buta-1,3-diyne]-alt-(dimethylsilane)], poly[[1,4-bis(thiophenyl)buta-1,3-diyne]-alt-(diphenylsilane)], poly[[1,4-bis(phenyl)buta-1,3-diyne]-alt-(dimethylsilane)],and poly[[1,4-bis(phenyl)buta-1,3-diyne]-alt-(diphenylsilane)] have been prepared. The characteristic C=C stretching frequencies appear at 2177-2179㎝-1 in the IR spectra of the polymers. The molecular weights of these polymers were detemined by GPC. All of these materials are soluble in organic solvents such as THF and chloroform, and thermally stable up to 200℃ in general without any weight loss under nitrogen. The prepared materials in THF solvent show a maximum absorption peak in the range of 334-356 nm with a molar absorptivity of 10³∼10ⁿ(n=5)L/(cm·mol) in the UV-visible absorption spectra. A maximum emission peak in the range of 403-550 nm is also observed in the fluorescence emission spectra. Both absorption and emission spectra strongly indicate that the obtained polycarbosilanes contain the new conjugated systems along the polymer main chain.

• Bulletin of the Korean Chemical Society
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• 제25권10호
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• pp.1564-1566
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• 2004

• 통합자연과학논문집
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• 제2권3호
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• pp.190-193
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• 2009

Bis(silyl)palladinum(II) and -platinum(II) complexes are key intermediates for the synthesis of organic silyllated compounds by the Pd or Pt-catalyzed reactions. Reactions of dialkylpalladinum and -platinum complexes with diphenylsilane gave the bis(silyl)palladinum and -platinum complexe in moderate to good yields. Isolated complexes were characterized by $^1H$, $^{13}C$ and $^{31}P$-NMR spectroscopy and elemental analyses. Some of the complexes were determined by X-ray crystallographic studies.

• Bulletin of the Korean Chemical Society
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• 제15권12호
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• pp.1103-1107
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• 1994

Interaction of triethylsilane and diphenylsilane ($Ph_2$$SiH_2$, $Ph_2$$SiD_2$) with the surfaces of rhodium has been examined by trapping the reaction intermediates with 2,3-dimethyl-l,3-butadiene. 1,4-Hydrosilylation of the diene is predominantly observed to occur under mild condition over the rhodium catalyst. It is inferred from the product analyses that silylene and silyl radicals bonded to rhodium surfaces are the intermediates for addition of silylene to the diene, and for 1,4-hydrosilylation, respectively.

• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.