• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.100-101
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.30-31
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.260-261
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• 2001

No Abstract.See Full-text

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.104-105
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• 2001

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.434-440
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• 2000

We fabricated a high power Nd:YAG laser pumped by a 1 kW diode laser with a Lambertian-type diffusive reflector. Maximum cw power of 500 W with a slope efficiency of 49%, which corresponds to an optical efficiency of 46.7%, was obtained from a short linear resonator when a 5 mm rod was used. The efficiencies decreased when a 6 mm rod was used, due to the poor quality of the absorption distribution in the rod. The measured beam quality factor of 70, which is slightly smaller than the value calculated from the measured thermal focal lengths, shows that the absorption distribution in the rod is fairly uniform. iform.

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.289-293
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• 2000

Diode-laser-pumped Tm:YAG laser of wavelength $2.02\mu\textrm{m}$has been manufactured and its excitation efficiency and output characteristics have been investigated. The excitation efficiency was varied from 66 to 68% with respect to the pump power, yielding pump power absorption of 87-89%. The output power was sensitively varied with the temperature of Tm:YAG rod. When the concave output coupler with a focal length of 25 mm and a transmittance of 3% was used, the maximum output power reached up to 1.2 W. The slope and optical efficiency of this Tm: YAG laser was 29% and 20% at $6^{\circ}C$, respectively.tively.

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.294-298
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• 2000

The output characteristics of intracavity frequency doubling of laser-diode end-pumped Nd:S-VAP laser were investigated. Nd:S-VAP is suitable for a microchip laser medium, which has a low threshold property because of a very high value of the stimulated emission cross-section and lifetime product. The threshold energy measured was 81 J.ll. The second harmonic output energy measured was $126\mu\textrm{J}$at a pump energy of $2\mu\textrm{J}$. We described for intracavity frequency doubling by using theoretical calculations. Q-switched second harmonic energy measured was $15\mu\textrm{J}$per pulse with a pulse-width of 26 ns. at a pump energy of 2 mJ and an $M^2$ of 1.47 represented a good beam quality. ality.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.887-890
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• 1997

Recently micromachining using DPSSL(Diode Pumped Solid State Laser) with 3rd harmonic wavelength is actively studied in laser machining area. Micromachining using DPSSL have outstanding advantages as UV source comparing with excimer laser in various aspect such a maintenance cost, maskless machining, high repetition rate and so on. In this study micro-drilling of PCB type substrate which consists of Cu-PI-Cu layer was performed using DPSS Nd:YAG laser(355nm, wavelength) in vector scanning method. Experimental and numerical method(Matlab simulation, FEM) are used to optimize process parameter and control machining depth. The man mechanism of this process is laser ablation. It is known that there is large gap between energy threshold of copper and that of PI. Matlab simulation considering energy threshold of material is performed to effect of duplication of pulse and FEM thermal analysis is used to predict the ablation depth of copper. This study could be widely used in various laser micromachining including via hole microdrilling of PCB, and micromachining of semiconductor components, medical parts and printer nozzle and so on.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.101-107
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• 1993

We carried out the useful theoretical calculation for the optimum design of a 1.48 ${\mu}m$ diode laser pumped E$r^{3+}$ doped fiber amplifier. The model we established is based on the rate equations of three level laser system and the overlap integral between fundamental mode L$P_{01}$ and E$r^{3+}$ doped area. We determined several fiber parameters (N.A., V value, fiber length, E$r^{3+}$ concentration, cutoff wavelength etc.) for the optimum design of a high optical gain. We found that our theoretical results are very useful to the design of E$r^{3+}$ doped fiber used in EDFA.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.69-78
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• 1999

In this paper, direct conversion receiver was designed to even harmonic anti-paralled diode pair ring mixer. Using a second harmonic component of LO instead of LO signal and RF signal are mixed by SHP(Sub Harmonic Pumped) mixer with anti-parallel diode pair. Canceling the harmonics of LO signal in ring mixer, SHP mixer using anti-parallel diode pair could mostly reduce the radiation of LO signal through a input port the most, good isolation characteristic, and low spurious characteristic by LO signal was shown over broad band. The produced SHP mixer showed LO/IF, RF/IF and LO/RF isolation was 24.6dB,36.2dB and 22.5dB respectively. And conversion loss was measured 15.6dB, IF output -35.6dBm with -20dBm RF input and 5.5dBm LO signal. 1dB compression point of If signal, in respect to RF signal, was found at the 0dbm RF signal.