• Current Optics and Photonics
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• v.5 no.6
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• pp.721-729
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• 2021

We demonstrate a Pr³⁺:YLF 639.7-nm laser with single-frequency output based on the Q-switched pre-lase technology, pumped by a fiber-coupled GaN blue laser diode. The pre-lase technology is realized by the step-type loss of the acousto-optical Q-switched device. The conclusions of the theoretical research are verified experimentally. The mode-suppression ratio was 44 dB at the single-frequency laser output. Detection by interferometer verified the realization of the stable single-frequency laser. In addition, the emission spectrum had a linewidth of 139.9 MHz, measured by Fabry-Perot interferometer. The single-frequency laser's single-peak power was over 19.7 W with 98.8-ns pulse duration, obtained under an absorption power of 1.74 W.

• Korean Journal of Optics and Photonics
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• v.32 no.5
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• pp.209-214
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• 2021

High-power continuous-wave operation of a Yb-doped double-clad fiber laser at 1018 nm, pumped by high-power diode lasers at 976 nm, is reported. Based on numerical calculation of the gain and laser signal power along the length of the Yb fiber, it is found that robust operation at 1018 nm can be achieved for a high Yb³⁺-ion excitation density greater than 11.5%, accompanied by high suppression of the feedback from the fiber's end facet. The Yb fiber laser constructed in house yields 626 W of continuous-wave output at 1018 nm for 729 W of incident pump power, corresponding to a slope efficiency of 86.6%. The prospect for power scaling is considered.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.12 s.115
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• pp.1156-1163
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• 2006

This paper presents an ultra wideband(UWB) direct conversion mixer for IEEE 802.15.3a applications with simulation and measurement results. Since the direct conversion mixing causes dc-offset and even-order distortion, the proposed mixer adopts an anti-parallel diode pairs(APDPs) to solve these problems. The proposed mixer consists of an in-phase wilkinson power divider over $3.1{\sim}4.8GHz$, a wideband $45^{\circ}$ power divider over $1.5{\sim}2.4GHz$, and miniatured band pass filters(BPFs) for RF-LO isolations. The conversion loss is optimized with impedance matchings between APDPs and wideband components. The measured mixer shows the conversion loss of 13.5 dB, input third-order intercept-point($IIP_3$) of 7 dBm, and 1-dB gam compression point($P_{1dB}$) of -4 dBm. Quadrature(I/Q) outputs have the magnitude difference of about 1 dB and phase difference of ${\pm}3^{\circ}$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.3
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• pp.50-56
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• 2015

In this study, AISI M2 powder was selected primarily through various pieces of literature in order to improve the hardness and wear resistance. Among the laser metal deposition parameters, laser power was studied to improve the deposition efficiency in the laser metal deposition using a diode-pumped disk laser. An SKD61 hot work steel plate and AISI M2 powder were used as a substrate and powder for laser metal deposition, respectively. Experiments for the laser metal deposition were carried out by changing the laser power and track layer. The quality of the track surface and cross-section after applying the single-layer method was better than that obtained from applying the multi-layer method. As the laser power increased, the track thickness was increased, and the surface roughness deviation was decreased. In laser power condition of 1.6kW, the maximum hardness of the deposition track was 790Hv. This value was 40% better than the hardness of the SKD61 after heat treatment.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.781-785
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• 1995

from the $K_{6}$P$_4$ $O_{13}$ flux using a temperature cooling method. According to SHG outpower measurement, phase matching angle is $\theta$=90$^{\circ}$, $\Phi$=23.3$^{\circ}$and angular acceptance of $\Phi$ direction is about 2 degree, Deviation of phase matching angle due to index inhomogeneity in KTP crystal is 0.17 degree. A 20mW green laser was obtained with the combination of a intracavity Nd ; YAG and KTP crystal.

• Transactions of the Korean Society of Automotive Engineers
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• v.24 no.4
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• pp.463-470
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• 2016

In this paper, the characteristics analysis of LMD track, such as including track structure, track wear resistance and track thickness, were analyzed to enhance the deposition efficiency using a diode-pumped disk laser. SKD61 hot work steel plate and Fe based AISI M2 alloy were used as a the substrate and powder for the LMD process, respectively. The laser power, track pitch and powder feed rate among LMD parameters were adopted to estimate the deposition efficiency. As the laser power is increased, heat input and melting pool on the substrate is grown also increases, so resulting in the increased LMD track thickness was increased. Through EPMA mapping analysis of the cross-section in the LMD track, it was observed that all the elements are evenly distributed inside. Therefore, the entire hardness in the LMD track is expected to be almost uniform regardless of location. The characteristics of the LMD specimen were excellent compared to the STD11 specimen in terms of the wear track width and the wear rate as well as the coefficient of friction. Especially the wear rate of LMD specimen has been significantly reduced by 60 % or more. From Based on the experimental results, the prediction formula of LMD thickness was calculated by using laser power, track pitch and powder feed rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.267-272
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• 2006

A series of $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ phosphors have been synthesized by solid-state reaction. The photoluminescence and structural properties of $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ have been examined. The $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ phosphors have a strong absorption at 400 nm, which is the emission wavelength of a violet light emitting diode (LED). The emission peaks of $SrGa_2S_4:Ce,Na$are located at 448 nm and 485 nm. The partial replacement of Sr by Ca in $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ causes a red shift of emission wavelengths. The $Sr_{1-x}Ca_xGa_2S_4:Ce,Na$ can be used as blue emitting phosphors pumped by the violet LED for fabricating the multi-band white LED.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.358-364
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• 2002

In this paper, we used U.V.(wavelength, 355nm) laser for adjusting Pt thin films temperature sensor to $100{\Omega}$ at $0^{\circ}C$. Internationally, A-class tolerance of temperature sensor is $0.06{\Omega}$ at $0^{\circ}C$. This is under value of $0.15^{\circ}C$, actually, so high-fine trimming technology is essential to this process. The width of trimmed lines was about $10{\mu}m$ and the best trimming of Pt thin films of $1{\sim}1.5{\mu}m$ was carried out with power : 35mW, rep. rate frequency : 200Hz and bite size : $1.5{\mu}m$. And using photolithography process, 96 resistors were fabricated in $2"{\times}2"$ substrate as the proportion of $79{\sim}90{\Omega}$ and $91{\sim}102{\Omega}$ is 42.7% and 57.3%, respectively. As result of trimming resistors to the target value of $109.73{\Omega}$ at $25^{\circ}C$, 82.3% of resistors had the tolerance within ${\pm}0.30{\Omega}$ and the others(17.7%) were within ${\pm}0.06{\Omega}$ of A-class tolerance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.204-209
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• 2007

We synthesized a series of $CaS_{1-x}Se_x:Eu$ red-emitting phosphors for application in phosphor-converted three-band white light emitting diode(LED). The photoluminescence and structural properties of $CaS_{1-x}Se_x:Eu$ were examined. The $CaS_{1-x}Se_x:Eu$ phosphors have a strong absorption at 455 nm, which is the emission wavelength of a blue LED. CaS:Eu has a red omission peak at 651 nm due to the $4f^65d^1(T_{2g}){\rightarrow}4f^7(^8S_{7/2})$ transition of the $Eu^{2+}$. The emission peak of $CaS_{1-x}Se_x:Eu$ is shifted from 651 to 598 nm with increasing Se content. $CaS_{1-x}Se_x:Eu$ can be used as wavelength-tunable red-emitting phosphors pumped by a blue LED. We also fabricated a three-band white LED by doping $SrGa_2S_4:Eu$ and $CaS_{0.50}Se_{0.50}:Eu$ phosphors onto a blue LED chip.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.