• 한국산학기술학회논문지
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• 제11권2호
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• pp.485-490
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• 2010

본 논문에서는 버팅 콘택(butting contact) 구조를 갖는 DDI DRAM소자의 감지 증폭기의 입력 게이트 단의 모든 기생 성분을 포함한 등가 회로를 제안 하였다. 제안한 모델을 이용하여 기생 쇼트키 다이오드가 감지 증폭기 동작에 어떤 영향을 미치는지 분석하였다. 각각의 불량 가능성에 대해 감지 증폭기가 어떻게 동작하는지 분석하여 단측 불량 특성의 원인을 규명하였다. DDI DRAM에서 단측 불량 원인과 불량률의 온도 의존성은 감지 증폭기의 입력 게이트 단에 형성된 기생 쇼트키 다이오드 형성에 기인한 것으로 판단된다. 이러한 기생 쇼트키 다이오드는 게이트 입력에 기생 전압 강하를 야기하게 되고 결국 감지 증폭기의 노이즈 마진을 감소시켜 단측 불량률을 증가시킨다.

• Journal of the Optical Society of Korea
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• 제13권3호
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• pp.386-391
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• 2009

PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권3호
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제11권10호
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• pp.5116-5131
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• 2017

This paper studies the radio frequency to direct current (RF-DC) conversion efficiency of rectennas applicable to wireless power transfer systems, where multiple receive antennas are arranged in serial, parallel or cascaded form. To begin with, a 2.45 GHz dual-diode rectifier is designed and its equivalent linear model is applied to analyze its output voltage and current. Then, using Advanced Design System (ADS), it is shown that the rectifying efficiency is as large as 66.2% in case the input power is 15.4 dBm. On the other hand, to boost the DC output, three composite rectennas are designed by inter-connecting two dual-diode rectifiers in serial, parallel and cascade forms; and their output voltage and current are investigated using their respective equivalent linear models. Simulation and experimental results demonstrate that all composite rectennas have almost the same RF-DC conversion efficiency as the dual-diode rectifier, yet the output of voltage or current can be significantly increased; in particular, the cascade rectenna obtains the highest rectifying efficiency.

• Journal of Electrical Engineering and Technology
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• 제11권5호
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• pp.1323-1331
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• 2016

• Journal of Power Electronics
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• 제19권2호
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• pp.403-412
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• 2019

Aiming at the problems of large dv/dt and di/dt in traditional single-ended converters and high electromagnetic interference (EMI) noise levels, a single-ended isolated converter using the secondary resonance technique is proposed in this paper. In the proposed converter, the voltage stress of the main power switch can be reduced and the voltage across the output diode is clamped to the output voltage when compared to the conventional flyback converter. In addition, the peak current stress through the main power switch can be decreased and zero current switching (ZCS) of the output diode can be achieved through the resonance technique. Moreover, the EMI noise coupling path and an equivalent model of the proposed converter topology are presented through the operational principle of the proposed converter. Analysis results indicate that the common mode (CM) EMI noise and the differential mode (DM) EMI noise of such a converter are deduced since the frequency spectra of the equivalent controlled voltage sources and controlled current source are decreased when compared with the traditional flyback converter. Furthermore, appropriate parameter selection of the resonant circuit network can increase the equivalent impedance in the EMI coupling path in the low frequency range, which further reduces the common mode interference. Finally, a simulation model and a 60W experimental prototype of the proposed converter are built and tested. Experimental results verify the theoretical analysis.

• 한국소음진동공학회논문집
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• 제20권4호
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• pp.397-404
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• 2010

The use of equivalent circuit models of piezoelectric energy harvesters is inevitable when power circuitry including rectifying and smoothing circuit elements is connected to them for evaluating DC electrical outputs. This is because it is difficult to incorporate the electro-mechanical coupling resulting from the additional circuitry into the conventional finite element analysis. Motivated by this observation, we propose a method to accurately extract the equivalent circuit parameters by using commercially available FEM software such as ANSYS which provides three-dimensional AC piezoelectric analysis. Then the equivalent circuit can be analyzed by circuit simulators such as $SimPowerSystems^{TM}$ of MATLAB. While the previous works have estimated the circuit parameters by experimental measurements or by analytical solutions developed only for limited geometries and boundary conditions, the proposed method has no such limitation because piezoelectric energy harvesters of any shapes and boundary conditions can be treated in FEM software. For the verification of the proposed method, multi-modal AC electrical power output by using a corresponding equivalent circuit is compared with that by ANSYS. The proposed method is then shown to be very useful in the subsequent evaluation of DC electrical output which is obtained by attaching a bridge diode and a storage capacitor to a piezoelectric energy harvester.

• 한국광학회지
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• 제22권1호
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• pp.35-39
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• 2011

다층 비율 방정식을 이용한 1550 nm InGaAsP 레이저 다이오드의 PSPICE 등가회로 모델을 제안하고 구현하였다. 비율 방정식에 필요한 레이저 다이오드 파라미터들은 자기충족적 양자우물 해석법을 이용하여 도출하였다. 이 모델을 이용하여 실제 레이저 다이오드와 드라이버 IC를 포함하는 광송신기 회로 전체를 PSPICE로 구현하여 그 출력 값과 측정치를 비교하였다. 이 비교를 통하여 실제 레이저 다이오드의 패키징 시 발생하는 기생 커패시터 값을 산출하였다. 이를 바탕으로 한 PSPICE 출력 값은 여러 동작 주파수에서 실제 회로의 측정값과 일치함을 보였다.

• 한국산업융합학회 논문집
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• 제24권4_1호
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• pp.411-419
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• 2021

In this study, IGBT_Total_Loss and DIODE_Total_Loss were used to analyze the slope of the junction temperature for each section for temperature and duty variables in order to simply calculate the junction temperature of the power semiconductor (IGBT). As a result of the calculation, IGBT_Max_Junction_Temp and DIODE_Max_Junction_Temp form a proportional relationship with temperature for each duty. This simulation data shows that the power loss of a power semiconductor is calculated in a complex manner according to the current dependence index, voltage dependence index, and temperature coefficient. By applying the slope for each condition and section, the junction temperature of the power semiconductor can be calculated simply.