• Journal of the Korean Solar Energy Society
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• v.36 no.4
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• pp.41-47
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• 2016

A bypass diode is connected in parallel to solar cells with opposite polarity. The advantage of using the bypass diode is circumvented a destructive efforts of hot-spot heating in the photovoltaic(PV) module. In addition, it is possible to reduce a energy loss under the partial shading on the PV module. This paper presents a characteristic of photovoltaic module under partial shading condition and with defective bypass diode by using the experimental data. The results of field testing for each photovoltaic modules, when photovoltaic system which is connected power grid is operating, the inner junction-box temperature of shading photovoltaic module is high $5^{\circ}C$ because of difference of flowing current through into bypass diode. And incase of not operating photovoltaic system, the inner junction-box temperature of module with defective bypass diode is greatly higher than partial shading PV module.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.359-362
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• 2016

In the PV (Photovoltaic) power system, a junction box collects the DC voltage generated from the PV module and transfers it to the PCS (power conditioning system). The junction box prevents damage caused by the voltage difference between the serially connected PV modules and provides convenience while repairing or inspecting the PV array. In addition, the junction box uses the diode to protect modules from the inverse current when the PV power system and electric power system are connected for use. However, by using the reverse blocking diode, heat is generated within the junction box while generating electric power, which decreases the generating efficiency, and causes short circuit and electric leakage. In this research, based on the purpose of improving the performance of the PV module by decreasing the heat generation within the junction box, a junction box with a built-in bypass circuit was designed/manufactured so that a certain capacity of current generated from the PV module does not run through the reverse blocking diode. The manufactured junction box was used to compare the electric power and heating power generated when the circuit was in the bypass/non-bypass modes. It was confirmed that the electric power loss and heat generation indicated a decrease when the circuit was in the bypass mode.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.77-81
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• 2007

Pentacene was dissolved in N-methyspyrrolidone (NMP) and mixed with poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate) (PEDOT:PSS). The solution color changed from deep purple to intense yellow. As the dissolution time increased, visible absorption decreased and ultraviolet (UV) absorption increased. PEDOT:PSS or Pentacene-PEDOT:PSS was spin-coated to control the layer thickness. Three-layered Schottky diodes consisting of Al, PEDOT:PSS or PEDOT:PSS-pentacene, and Au with thickness of 300nm, respectively, were fabricated. The current densities of $4.8{\mu}A/cm^2$ at 2.5MV/m and $660{\mu}A/cm^2$ at 1.9MV/m were obtained for the Au/PEDOT:PSS/Al and Au/Pentacene-PEDOT:PSS/Al Schottky diodes, respectively. The current density of the Schottky diode was enhanced by about two orders of magnitude by doping pentacene to PEDOT:PSS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.4
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.372-375
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• 1996

In this paper, a new active interphase reactor for twelve-pulse diode rectifiers is proposed. The proposed system draws near sinusoidal currents from the utility. In this scheme, a low kVA(0.02 $P_o$ (PU)) active current source injects a triangular current into an interphase reactor of a twelve-pulse diode rectifier. The modification results in near sinusoidal input current with less than 1% THD. Experimental results are provided from a 208V, 10kVA rectifier system.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.295-298
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• 1999

In this paper, the diode bridge-type ZVT(Zero-Voltage Transition) inverter is proposed. It consists of one auxiliary switch, three resonant inductors and six blocking diodes. So, the advantage of the proposed topology is the reduction of the auxiliary switch. The topology of the proposed ZVT inverter is analyzed with a description of the control conditions based on the load current. Therefore, this paper two control algorithms were discussed. A variable resonant pattern control algorithm by using load current feedback and a resonant period control algorithm by using resonant inductor current feedback is proposed in order to achieve the ZVT switching condition in full control range and the reducing current spike main switches cause by reverse recovery problem.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.26-27
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• 2004

We present the first demonstration of the vertical-injection depleted optical thyristor laster diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 3.36 V and 10 A respectively. The holding voltage and current are respectively 1.37 V, 100 A. The lasing threshold current is 131 mA at 25 C. The output peak wavelength is at 1578 nm at a bias current equal to 1.22 times threshold.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.21-22
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AlGaN/GaN SBD showed high forward current of 88.61 mA at 3.5 V while that of the conventional device was 14.1 mA at the same condition.

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.